Mike Krames

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Jonathan J. Wierer, Jr.North Carolina State University, Department of Electrical and Computer EngineeringVerified email at ncsu.edu
Fred A. Kish, Jr.Distinguished M.C. Dean Professor of ECE, NC State UniversityVerified email at ncsu.edu
Troy TrottierUniversity of Florida, Motorola, Hewlett-Packard, Lumileds, Phillips, Soraa, SLDVerified email at kyocera-sldlaser.com
Aurelien DavidGoogleVerified email at polytechnique.org
Arto NurmikkoProfessor of Engineering and Physics, Brown UniversityVerified email at brown.edu
Christopher KocotDirector, Finisar CorporationVerified email at finisar.com
Yoon-Kyu SongSeoul National UniversityVerified email at snu.ac.kr
Mihail SigalasProfessor, Department of Materials Science, University of PatrasVerified email at upatras.gr
Andrew Y. KimLumiledsVerified email at alum.mit.edu
Michael CichRaxiumVerified email at raxium.com
Eleni MakaronaInstitute of Nanoscience and NanotechnologyVerified email at inn.demokritos.gr
Jung HanWilliam Norton Professor of Electrical Engineering, Yale UniversityVerified email at yale.edu
Kevin HouserOregon State UniversityVerified email at oregonstate.edu
Jörg MeyerProfessor, Hochschule Hamm-LippstadtVerified email at hshl.de
Marie Anne Van De HaarSeaborough Research B.V.Verified email at seaborough.com
Christophe HurniFacebookVerified email at engr.ucsb.edu
Thomas M KatonaCalifornia Polytechnic State UniversityVerified email at calpoly.edu
Minchen WeiThe Hong Kong Polytechnic UniversityVerified email at polyu.edu.hk
Jerry SimmonsSandia National LaboratoriesVerified email at sandia.gov
Anne BerendsSeaborough ResearchVerified email at seaborough.com

Mike Krames

Arkesso, LLC; ORCID 0000-0001-8545-851X

Verified email at arkesso.com - Homepage

semiconductors light emitting diodes lasers lighting displays


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Status and future of high-power light-emitting diodes for solid-state lighting MR Krames, OB Shchekin, R Mueller-Mach, GO Mueller, L Zhou, ... Journal of display technology 3 (2), 160-175, 2007	2436	2007
Auger recombination in InGaN measured by photoluminescence YC Shen, GO Mueller, S Watanabe, NF Gardner, A Munkholm, ... Applied Physics Letters 91 (14), 2007	1405	2007
High-power AlGaInN flip-chip light-emitting diodes JJ Wierer, DA Steigerwald, MR Krames, JJ O’shea, MJ Ludowise, ... Applied Physics Letters 78 (22), 3379-3381, 2001	844	2001
Highly efficient all‐nitride phosphor‐converted white light emitting diode R Mueller‐Mach, G Mueller, MR Krames, HA Höppe, F Stadler, W Schnick, ... physica status solidi (a) 202 (9), 1727-1732, 2005	675	2005
High-power phosphor-converted light-emitting diodes based on III-nitrides R Mueller-Mach, GO Mueller, MR Krames, T Trottier IEEE Journal of Selected Topics in Quantum Electronics 8 (2), 339-345, 2002	670	2002
High-power truncated-inverted-pyramid light-emitting diodes exhibiting % external quantum efficiency MR Krames, M Ochiai-Holcomb, GE Höfler, C Carter-Coman, EI Chen, ... Applied physics letters 75 (16), 2365-2367, 1999	657	1999
Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕ cm2 NF Gardner, GO Müller, YC Shen, G Chen, S Watanabe, W Götz, ... Applied Physics Letters 91 (24), 2007	552	2007
InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures JJ Wierer, MR Krames, JE Epler, NF Gardner, MG Craford, JR Wendt, ... Applied Physics Letters 84 (19), 3885-3887, 2004	504	2004
Ordered interface texturing for a light emitting device MR Krames, FA Kish Jr US Patent 5,779,924, 1998	477	1998
History of gallium–nitride-based light-emitting diodes for illumination S Nakamura, MR Krames Proceedings of the IEEE 101 (10), 2211-2220, 2013	473	2013
Research challenges to ultra‐efficient inorganic solid‐state lighting JM Phillips, ME Coltrin, MH Crawford, AJ Fischer, MR Krames, ... Laser & Photonics Reviews 1 (4), 307-333, 2007	465	2007
Luminescent ceramic for a light emitting device GO Mueller, RB Mueller-Mach, MR Krames, PJ Schmidt, HH Bechtel, ... US Patent 7,361,938, 2008	447*	2008
High performance thin-film flip-chip InGaN–GaN light-emitting diodes OB Shchekin, JE Epler, TA Trottier, T Margalith, DA Steigerwald, ... Applied Physics Letters 89 (7), 2006	432	2006
Phosphor-converted light emitting device WD Collins III, MR Krames, GJ Verhoeckx, NJM Van Leth US Patent 6,642,652, 2003	427	2003
Carrier distribution in (0001) InGaN∕ GaN multiple quantum well light-emitting diodes A David, MJ Grundmann, JF Kaeding, NF Gardner, TG Mihopoulos, ... Applied Physics Letters 92 (5), 2008	412	2008
III-Phospide and III-Arsenide flip chip light-emitting devices MD Camras, DA Steigerwald, FM Steranka, MJ Ludowise, PS Martin, ... US Patent 6,784,463, 2004	394	2004
History, development, and applications of high-brightness visible light-emitting diodes RD Dupuis, MR Krames Journal of lightwave technology 26 (9), 1154-1171, 2008	375	2008
Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor WD Collins III, MR Krames, GJ Verhoeckx, NJM van Leth US Patent 6,576,488, 2003	357	2003
High power LEDs–Technology status and market applications FM Steranka, J Bhat, D Collins, L Cook, MG Craford, R Fletcher, ... physica status solidi (a) 194 (2), 380-388, 2002	319	2002
Polarized semiconductor light emitting device MH Keuper, MR Krames, GO Mueller US Patent 7,408,201, 2008	315	2008

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