| Polarized monolithic white semipolar (20–21) InGaN light-emitting diodes grown on high quality (20–21) GaN/sapphire templates and its application to visible light communication M Khoury, H Li, P Li, YC Chow, B Bonef, H Zhang, MS Wong, S Pinna, ... Nano Energy 67, 104236, 2020 | 60 | 2020 |
| Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template H Li, MS Wong, M Khoury, B Bonef, H Zhang, YC Chow, P Li, J Kearns, ... Optics Express 27 (17), 24154-24160, 2019 | 48 | 2019 |
| Electrically driven, polarized, phosphor-free white semipolar (20-21) InGaN light-emitting diodes grown on semipolar bulk GaN substrate H Li, P Li, H Zhang, YC Chow, MS Wong, S Pinna, J Klamkin, JS Speck, ... Optics express 28 (9), 13569-13575, 2020 | 19 | 2020 |
| Role of V-defect density on the performance of III-nitride green LEDs on sapphire substrates C Lynsky, RC White, YC Chow, WY Ho, S Nakamura, SP DenBaars, ... Journal of Crystal Growth 560, 126048, 2021 | 17 | 2021 |
| Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors YC Chow, C Lee, MS Wong, YR Wu, S Nakamura, SP DenBaars, ... Optics Express 28 (16), 23796-23805, 2020 | 15 | 2020 |
| Quantitative correlation of hot electron emission to Auger recombination in the active region of c-plane blue III-N LEDs WY Ho, YC Chow, DJ Myers, F Wu, J Peretti, C Weisbuch, JS Speck Applied Physics Letters 119 (5), 2021 | 12 | 2021 |
| Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells R Yapparov, YC Chow, C Lynsky, F Wu, S Nakamura, JS Speck, ... Journal of Applied Physics 128 (22), 2020 | 12 | 2020 |
| Impact of doped barriers on the recombination coefficients of c-plane InGaN/GaN single quantum well light-emitting diodes YC Chow, C Lynsky, S Nakamura, SP DenBaars, C Weisbuch, JS Speck Applied Physics Letters 121 (18), 2022 | 10 | 2022 |
| Reduction of efficiency droop in c-plane InGaN/GaN light-emitting diodes using a thick single quantum well with doped barriers YC Chow, C Lynsky, F Wu, S Nakamura, SP DenBaars, C Weisbuch, ... Applied Physics Letters 119 (22), 2021 | 10 | 2021 |
| High internal quantum efficiency of long wavelength InGaN quantum wells S Marcinkevičius, R Yapparov, YC Chow, C Lynsky, S Nakamura, ... Applied Physics Letters 119 (7), 2021 | 8 | 2021 |
| Development of efficient semipolar InGaN long wavelength light-emitting diodes and blue laser diodes grown on a high quality semipolar GaN/sapphire template H Li, H Zhang, P Li, MS Wong, YC Chow, S Pinna, J Klamkin, P Demierry, ... Journal of Physics: Photonics 2 (3), 031003, 2020 | 7 | 2020 |
| Origins of the high-energy electroluminescence peaks in long-wavelength (∼ 495–685 nm) InGaN light-emitting diodes YC Chow, T Tak, F Wu, J Ewing, S Nakamura, SP DenBaars, YR Wu, ... Applied Physics Letters 123 (9), 2023 | 5 | 2023 |
| Localization effect in photoelectron transport induced by alloy disorder in nitride semiconductor compounds M Sauty, NMS Lopes, JP Banon, Y Lassailly, L Martinelli, A Alhassan, ... Physical Review Letters 129 (21), 216602, 2022 | 5 | 2022 |
| Measurement of minority carrier diffusion length in p-GaN using electron emission spectroscopy (EES) WY Ho, YC Chow, S Nakamura, J Peretti, C Weisbuch, JS Speck Applied Physics Letters 122 (21), 2023 | 4 | 2023 |
| Demonstration of yellow (568 nm) stimulated emission from optically pumped InGaN/GaN multi-quantum wells P Li, H Zhang, H Li, T Cohen, R Anderson, MS Wong, E Trageser, ... Applied Physics Letters 121 (7), 2022 | 4 | 2022 |
| Detection of hot electrons originating from an upper valley at above the valley in wurtzite GaN using electron emission spectroscopy WY Ho, AI Alhassan, C Lynsky, YC Chow, DJ Myers, SP DenBaars, ... Physical Review B 107 (3), 035303, 2023 | 3 | 2023 |
| Steady-state junction current distribution in pn GaN diodes measured using low-energy electron microscopy (LEEM) WY Ho, CW Johnson, T Tak, M Sauty, YC Chow, S Nakamura, A Schmid, ... Applied Physics Letters 123 (3), 2023 | 2 | 2023 |
| Low-efficiency-droop c-plane InGaN/GaN light-emitting diodes through the use of thick single quantum wells and doped barriers YC Chow, C Lynsky, S Nakamura, SP DenBaars, C Weisbuch, JS Speck Journal of Applied Physics 133 (14), 2023 | 2 | 2023 |
| Optimization of InGaN quantum well interfaces for fast interwell carrier transport and low nonradiative recombination R Yapparov, C Lynsky, YC Chow, S Nakamura, JS Speck, ... Gallium Nitride Materials and Devices XVII 12001, 14-20, 2022 | 2 | 2022 |
| High external quantum efficiency (6.5%) InGaN V-defect LEDs at 600 nm on patterned sapphire substrates JJ Ewing, C Lynsky, MS Wong, F Wu, YC Chow, P Shapturenka, M Iza, ... Optics Express 31 (25), 41351-41360, 2023 | 1 | 2023 |
