| GaAs interfacial self-cleaning by atomic layer deposition CL Hinkle, AM Sonnet, EM Vogel, S McDonnell, GJ Hughes, M Milojevic, ... Applied Physics Letters 92 (7), 071901, 2008 | 491 | 2008 |
| Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure A Azcatl, X Qin, A Prakash, C Zhang, L Cheng, Q Wang, N Lu, MJ Kim, ... Nano letters 16 (9), 5437-5443, 2016 | 393 | 2016 |
| Template-directed synthesis of oxide nanotubes: fabrication, characterization, and applications C Bae, H Yoo, S Kim, K Lee, J Kim, MM Sung, H Shin Chemistry of Materials 20 (3), 756-767, 2008 | 369 | 2008 |
| Conformal dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics B Lee, SY Park, HC Kim, KJ Cho, EM Vogel, MJ Kim, RM Wallace, J Kim Applied Physics Letters 92 (20), 203102, 2008 | 361 | 2008 |
| Formation of TiO2 and ZrO2 Nanotubes Using Atomic Layer Deposition with Ultraprecise Control of the Wall Thickness H Shin, DK Jeong, J Lee, MM Sung, J Kim Advanced Materials 16 (14), 1197-1200, 2004 | 346 | 2004 |
| Metal Contacts on Physical Vapor Deposited Monolayer MoS2 C Gong, C Huang, J Miller, L Cheng, Y Hao, D Cobden, J Kim, RS Ruoff, ... ACS nano 7 (12), 11350-11357, 2013 | 335 | 2013 |
| HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability S McDonnell, B Brennan, A Azcatl, N Lu, H Dong, C Buie, J Kim, ... ACS nano 7 (11), 10354-10361, 2013 | 303 | 2013 |
| Ferroelectric thin Hf0.5Zr05O2 films: a review of recent advance SJ Kim, J Mohan, SR Summerfelt, J Kim JOM 71 (1), 246, 2019 | 266* | 2019 |
| Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget SJ Kim, D Narayan, JG Lee, J Mohan, JS Lee, J Lee, HS Kim, YC Byun, ... Applied Physics Letters 111 (24), 242901, 2017 | 263 | 2017 |
| Large-Area Deposition of MoS2 by pulsed laser deposition with in situ thickness control MI Serna, SH Yoo, S Moreno, Y Xi, JP Oviedo, H Choi, HN Alshareef, ... ACS Nano 10 (6), 6054-6061, 2016 | 240 | 2016 |
| HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy R Yue, AT Barton, H Zhu, A Azcatl, LF Pena, J Wang, X Peng, N Lu, ... ACS nano 9 (1), 474-480, 2015 | 230 | 2015 |
| MoS2 functionalization for ultra-thin atomic layer deposited dielectrics A Azcatl, S McDonnell, S KC, X Peng, H Dong, X Qin, R Addou, GI Mordi, ... Applied Physics Letters 104 (11), 111601, 2014 | 227 | 2014 |
| Ozone adsorption on graphene: ab initio study and experimental validation G Lee, B Lee, J Kim, K Cho The Journal of Physical Chemistry C 113 (32), 14225-14229, 2009 | 216 | 2009 |
| Half-cycle atomic layer deposition reaction studies of on (100) surfaces M Milojevic, FS Aguirre-Tostado, CL Hinkle, HC Kim, EM Vogel, J Kim, ... Applied Physics Letters 93 (20), 202902, 2008 | 190 | 2008 |
| Remote Plasma Oxidation and Atomic Layer Etching of MoS2 H Zhu, X Qin, L Cheng, A Azcatl, J Kim, RM Wallace ACS applied materials & interfaces 8 (29), 19119-19126, 2016 | 171 | 2016 |
| Atomic layer deposition of dielectrics on graphene using reversibly physisorbed ozone S Jandhyala, G Mordi, B Lee, G Lee, C Floresca, PR Cha, J Ahn, ... ACS nano 6 (3), 2722-2730, 2012 | 156 | 2012 |
| Comparison of the sputter rates of oxide films relative to the sputter rate of DR Baer, MH Engelhard, AS Lea, P Nachimuthu, TC Droubay, J Kim, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 28 (5 …, 2010 | 152 | 2010 |
| Schottky barrier height engineering for electrical contacts of multilayered MoS2 transistors with reduction of metal induced gate states GS Kim, SH Kim, J Park, K Han, J Kim, HY Yu ACS Nano 12 (6), 6292, 2018 | 151 | 2018 |
| Characteristics of high-k Al 2 O 3 dielectric using ozone-based atomic layer deposition for dual-gated graphene devices B Lee, G Mordi, MJ Kim, YJ Chabal, EM Vogel, RM Wallace, KJ Cho, ... Applied Physics Letters 97 (4), 043107-043107-3, 2010 | 148 | 2010 |
| Nucleation and growth of WSe2: enabling large grain transition metal dichalcogenides R Yue, Y Nie, LA Walsh, R Addou, C Liang, N Lu, AT Barton, H Zhu, ... 2D Materials 4 (4), 045019, 2017 | 142 | 2017 |
Robert M. WallaceUniversity of Texas at Dallas在 utdallas.edu 的电子邮件经过验证
