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Lakshman Srinivasan
Lakshman Srinivasan
PhD researcher at IPVF and LPICM, affiliated with Ecole Polytechnique, France
Verified email at ipvf.fr
Title
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Cited by
Year
Reactive plasma sputtering deposition of polycrystalline GaN thin films on silicon substrates at room temperature
L Srinivasan, C Jadaud, F Silva, JC Vanel, JL Maurice, E Johnson, ...
Journal of Vacuum Science & Technology A 41 (5), 2023
22023
Gallium nitride deposition via magnetron sputtering: Linking plasma-surface interactions and thin film crystalline features
L Srinivasan, K Gazeli, S Prasanna, L Invernizzi, PR i Cabarrocas, ...
Vacuum 224, 113185, 2024
12024
Nitrogen atoms absolute density measurement using two-photon absorption laser induced fluorescence in reactive magnetron discharge for gallium nitride deposition
L Srinivasan, L Invernizzi, S Prasanna, K Gazeli, N Fagnon, ...
Applied Physics Letters 124 (10), 2024
2024
Epitaxial Lateral Overgrowth of GaAsP for III‐V/Si‐Based Photovoltaics
A Strömberg, B Manavaimaran, L Srinivasan, S Lourdudoss, YT Sun
physica status solidi (a) 220 (8), 2200623, 2023
2023
Epitaxial lateral overgrowth of GaAsP/Si for tandem solar cell
A Strömberg, B Manavaimaran, L Srinivasan, S Lourdudoss, YT Sun
2022 Compound Semiconductor Week (CSW), 1-2, 2022
2022
JNPV conference
L Srinivasan, K Ouaras, PR i Cabarrocas
2022
Properties of epitaxial lateral overgrowth of GaAsP and GaAs grown by hydride vapor phase epitaxy
L Srinivasan
2020
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Articles 1–7