RRAM-based synapse devices for neuromorphic systems K Moon, S Lim, J Park, C Sung, S Oh, J Woo, J Lee, H Hwang Faraday discussions 213, 421-451, 2019 | 200 | 2019 |
Various threshold switching devices for integrate and fire neuron applications D Lee, M Kwak, K Moon, W Choi, J Park, J Yoo, J Song, S Lim, C Sung, ... Advanced Electronic Materials 5 (9), 1800866, 2019 | 116 | 2019 |
Improved Synapse Device With MLC and Conductance Linearity Using Quantized Conduction for Neuromorphic Systems S Lim, C Sung, H Kim, T Kim, J Song, JJ Kim, H Hwang IEEE Electron Device Letters 39 (2), 312-315, 2018 | 67 | 2018 |
Field-induced nucleation in threshold switching characteristics of electrochemical metallization devices J Yoo, J Park, J Song, S Lim, H Hwang Applied Physics Letters 111 (6), 2017 | 67 | 2017 |
Effect of nitrogen doping on variability of TaOx-RRAM for low-power 3-bit MLC applications SH Misha, N Tamanna, J Woo, S Lee, J Song, J Park, S Lim, J Park, ... ECS Solid State Letters 4 (3), P25, 2015 | 49 | 2015 |
Effect of conductance linearity and multi-level cell characteristics of TaOx-based synapse device on pattern recognition accuracy of neuromorphic system C Sung, S Lim, H Kim, T Kim, K Moon, J Song, JJ Kim, H Hwang Nanotechnology 29 (11), 115203, 2018 | 47 | 2018 |
Reliable Ge2Sb2Te5‐Integrated High‐Density Nanoscale Conductive Bridge Random Access Memory using Facile Nitrogen‐Doping Strategy N Raeis‐Hosseini, S Lim, H Hwang, J Rho Advanced Electronic Materials 4 (11), 1800360, 2018 | 43 | 2018 |
Controllable quantized conductance for multilevel data storage applications using conductive bridge random access memory FG Aga, J Woo, J Song, J Park, S Lim, C Sung, H Hwang Nanotechnology 28 (11), 115707, 2017 | 40 | 2017 |
Improved synaptic behavior of CBRAM using internal voltage divider for neuromorphic systems S Lim, M Kwak, H Hwang IEEE Transactions on Electron Devices 65 (9), 3976-3981, 2018 | 35 | 2018 |
Excellent synaptic behavior of lithium-based nano-ionic transistor based on optimal WO2. 7 stoichiometry with high ion diffusivity J Lee, RD Nikam, S Lim, M Kwak, H Hwang Nanotechnology 31 (23), 235203, 2020 | 33 | 2020 |
Monolithic integration of AgTe/TiO2based threshold switching device with TiN liner for steep slope field-effect transistors J Song, J Park, K Moon, J Woo, S Lim, J Yoo, D Lee, H Hwang 2016 IEEE International Electron Devices Meeting (IEDM), 25.3. 1-25.3. 4, 2016 | 33 | 2016 |
Understanding of proton induced synaptic behaviors in three-terminal synapse device for neuromorphic systems J Lee, S Lim, M Kwak, J Song, H Hwang Nanotechnology 30 (25), 255202, 2019 | 32 | 2019 |
Self-limited CBRAM with threshold selector for 1S1R crossbar array applications J Song, J Woo, S Lim, SA Chekol, H Hwang IEEE Electron Device Letters 38 (11), 1532-1535, 2017 | 32 | 2017 |
Effects of Liner Thickness on the Reliability of AgTe/TiO2-Based Threshold Switching Devices J Song, J Woo, J Yoo, SA Chekol, S Lim, C Sung, H Hwang IEEE Transactions on Electron Devices 64 (11), 4763-4767, 2017 | 30 | 2017 |
Retention modeling for ultra-thin density of Cu-based conductive bridge random access memory (CBRAM) FG Aga, J Woo, S Lee, J Song, J Park, J Park, S Lim, C Sung, H Hwang AIP Advances 6 (2), 2016 | 25 | 2016 |
Microstructural engineering in interface-type synapse device for enhancing linear and symmetric conductance changes J Park, C Lee, M Kwak, SA Chekol, S Lim, M Kim, J Woo, H Hwang, D Lee Nanotechnology 30 (30), 305202, 2019 | 21 | 2019 |
Excellent threshold switching device (Ioff∼ 1 pA) with atom-scale metal filament for steep slope (< 5 mV/dec), ultra low voltage (Vdd= 0.25 V) FET applications S Lim, J Yoo, J Song, J Woo, J Park, H Hwang 2016 IEEE International Electron Devices Meeting (IEDM), 34.7. 1-37.7. 4, 2016 | 20 | 2016 |
An excellent performance of a C-Te OTS device with amorphous Ge interfacial layer for selector application SA Chekol, J Song, J Yoo, S Lim, H Hwang Applied Physics Letters 114 (10), 2019 | 19 | 2019 |
Investigation of Linearity in TaOx-Based RRAM Devices for Neuromorphic Applications C Sung, A Padovani, B Beltrando, D Lee, M Kwak, S Lim, L Larcher, ... IEEE Journal of The Electron Devices Society 7, 404-408, 2019 | 18 | 2019 |
WOx-Based Synapse Device With Excellent Conductance Uniformity for Hardware Neural Networks W Choi, SG Gi, D Lee, S Lim, C Lee, BG Lee, H Hwang IEEE Transactions on Nanotechnology 19, 594-600, 2020 | 16 | 2020 |