| Sub-kT/q Switching in Strong Inversion in PbZr0.52Ti0.48O3 Gated Negative Capacitance FETs S Dasgupta, A Rajashekhar, K Majumdar, N Agrawal, A Razavieh, ... Exploratory Solid-State Computational Devices and Circuits, IEEE Journal on …, 2015 | 142 | 2015 |
| Toward system on chip (SoC) development using FinFET technology: Challenges, solutions, process co-development & optimization guidelines M Shrivastava, R Mehta, S Gupta, N Agrawal, MS Baghini, DK Sharma, ... IEEE Transactions on Electron Devices 58 (6), 1597-1607, 2011 | 52 | 2011 |
| Impact of transistor architecture (bulk planar, trigate on bulk, ultrathin-body planar SOI) and material (silicon or III–V semiconductor) on variation for logic and SRAM … N Agrawal, Y Kimura, R Arghavani, S Datta IEEE transactions on electron devices 60 (10), 3298-3304, 2013 | 46 | 2013 |
| Electron Transport in Multigate InxGa1–x As Nanowire FETs: From Diffusive to Ballistic Regimes at Room Temperature AV Thathachary, N Agrawal, L Liu, S Datta Nano letters 14 (2), 626-633, 2014 | 39 | 2014 |
| Impact of variation in nanoscale silicon and non-silicon FinFETs and tunnel FETs on device and SRAM performance N Agrawal, H Liu, R Arghavani, V Narayanan, S Datta IEEE Transactions on Electron Devices 62 (6), 1691-1697, 2015 | 35 | 2015 |
| Exploration of vertical MOSFET and tunnel FET device architecture for Sub 10nm node applications H Liu, DK Mohata, A Nidhi, V Saripalli, V Narayanan, S Datta Device Research Conference (DRC), 2012 70th Annual, 233-234, 2012 | 29 | 2012 |
| Punch-through stop doping profile control via interstitial trapping by oxygen-insertion silicon channel H Takeuchi, RJ Mears, RJ Stephenson, M Hytha, D Connelly, P Fastenko, ... IEEE Journal of the Electron Devices Society 6, 481-486, 2017 | 22 | 2017 |
| Impact of Varying Indium(x) Concentration and Quantum Confinement on PBTI Reliability in InxGa1-xAs FinFET N Agrawal, AV Thathachary, S Mahapatra, S Datta IEEE Electron Device Letters 36 (2), 120-122, 2014 | 17 | 2014 |
| Indium arsenide (InAs) single and dual quantum-well heterostructure FinFETs AV Thathachary, N Agrawal, KK Bhuwalka, M Cantoro, YC Heo, ... 2015 Symposium on VLSI Technology (VLSI Technology), T208-T209, 2015 | 16 | 2015 |
| Analysis of local interconnect resistance at scaled process nodes R Pandey, N Agrawal, R Arghavani, S Datta 2015 73rd Annual Device Research Conference (DRC), 184-184, 2015 | 13 | 2015 |
| Investigation of InxGa1−xAs FinFET architecture with varying indium (x) concentration and quantum confinement VT Arun, N Agrawal, G Lavallee, M Cantoro, SS Kim, DW Kim, S Datta 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014 | 11 | 2014 |
| Will strong quantum confinement effect limit low VCC logic application of III–V FINFETs? A Nidhi, V Saripalli, V Narayanan, Y Kimura, R Arghavani, S Datta Device Research Conference (DRC), 2012 70th Annual, 231-232, 2012 | 9 | 2012 |
| Punch-through stop doping profile control via interstitial trapping by oxygen-insertion silicon channel RJ Mears, H Takeuchi, RJ Stephenson, M Hytha, R Burton, NW Cody, ... 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM), 65-66, 2017 | 7 | 2017 |
| Tunnel junction abruptness, source random dopant fluctuation and PBTI induced variability analysis of GaAs0. 4Sb0. 6/In0. 65Ga0. 35As heterojunction tunnel FETs R Pandey, N Agrawal, V Chobpattana, K Henry, M Kuhn, H Liu, M Labella, ... 2015 IEEE International Electron Devices Meeting (IEDM), 14.2. 1-14.2. 4, 2015 | 7 | 2015 |
| (Keynote) III-V Compound Semiconductor Field Effect Transistors for Low Power Digital Logic S Datta, AV Thathachary, L Liu, E Hwang, A Agrawal, N Agrawal ECS Transactions 53 (3), 3, 2013 | 4 | 2013 |
| Reduction of charge transfer region using graphene nano-ribbon geometry for improved complementary FET performance at sub-micron channel length MJ Hollander, N Shukla, N Agrawal, H Madan, JA Robinson, S Datta 71st Device Research Conference, 151-152, 2013 | 3 | 2013 |
| 2015 Index IEEE Electron Device Letters Vol. 36 M Abiko, E Acuna, R Agaiby, AK Agarwal, R Agarwal, Y Agata, A Agboton, ... IEEE Electron Device Letters 36 (12), 1391, 2015 | | 2015 |
| Variation Study on Advanced Cmos Systems for Low Voltage Applications N Agrawal https://etda.libraries.psu.edu/catalog/26674, 2015 | | 2015 |
| Electron trapping dominance in strained germanium quantum well planar and FinFET devices with NBTI N Agrawal, A Agrawal, S Mukhopadhyay, S Mahapatra, S Datta 2015 73rd Annual Device Research Conference (DRC), 283-284, 2015 | | 2015 |
| Transistor Modeling J Guo, H Liu, DK Mohata, A Nidhi, V Saripalli, V Narayanan, S Datta | | |
Suman DattaJoseph M. Pettit Chair ProfessorVerified email at gatech.edu
