| Synergistic improvement of sensing performance in ferroelectric transistor gas sensors using remnant polarization W Shin, J Yim, JH Bae, JK Lee, S Hong, J Kim, Y Jeong, D Kwon, RH Koo, ... Materials Horizons 9 (6), 1623-1630, 2022 | 14 | 2022 |
| Effects of oxygen vacancies on ferroelectric characteristics of RF-sputtered Hf0. 5Zr0. 5O2 C Han, KR Kwon, J Kim, J Yim, S Kim, EC Park, JW You, S Jeong, R Choi, ... Materials Science in Semiconductor Processing 160, 107401, 2023 | 4 | 2023 |
| Effects of RTA Rising Time on Ferroelectric Characteristics of HfZrO2 C Han, SJ Kwon, J Yim, J Kim, S Kim, S Jeong, EC Park, JW You, R Choi, ... IEEE Transactions on Electron Devices 69 (6), 3499-3502, 2022 | 4 | 2022 |
| Ferroelectric Field-Effect Transistor Synaptic Device with Hafnium-silicate Interlayer SW Kim, W Shin, M Kim, KR Kwon, J Yim, J Kim, C Han, S Jeong, EC Park, ... IEEE Electron Device Letters, 2023 | 2 | 2023 |
| Ferroelectric polarization-switching acceleration of sputtered Hf0. 5Zr0. 5O2 with defect-induced polarization of interlayer C Han, J Yim, A Nguyen, J Kim, KR Kwon, S Kim, S Jeong, EC Park, ... Journal of Alloys and Compounds 960, 170516, 2023 | 1 | 2023 |
| All-Sputter-Deposited Hf0.5Zr0.5O2 Double-Gate Ferroelectric Thin-Film Transistor with Amorphous Indium–Gallium–Zinc Oxide Channel S Jeong, C Han, J Yim, J Kim, KR Kwon, S Kim, EC Park, JW You, R Choi, ... IEEE Electron Device Letters, 2023 | 1 | 2023 |
| Effects of Deposition Power and Thermal Treatment on Ferroelectric Properties of Sputtered HfZrO C Han, KR Kwon, J Yim, J Kim, S Kim, S Jeong, EC Park, JW You, R Choi, ... IEEE Transactions on Electron Devices, 2024 | | 2024 |
| Analysis on Degradation of Ferroelectric Memory S Kim, J Kim, S Jeong, K Kwon, C Han, E Park, J Yim, B Kwak, J You, ... 한국차세대컴퓨팅학회 학술대회, 212-213, 2022 | | 2022 |
Jiyong YimHanyang UniversityVerified email at hanyang.ac.kr
