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Gihun Choe
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Direct comparison of ferroelectric properties in Hf0. 5Zr0. 5O2 between thermal and plasma-enhanced atomic layer deposition
J Hur, N Tasneem, G Choe, P Wang, Z Wang, AI Khan, S Yu
Nanotechnology 31 (50), 505707, 2020
532020
Adjusting the operating voltage of an nanoelectromechanical relay using negative capacitance
K Choe, C Shin
IEEE Transactions on Electron Devices 64 (12), 5270-5273, 2017
292017
Ferroelectric HfO2-based synaptic devices: recent trends and prospects
S Yu, J Hur, YC Luo, W Shim, G Choe, P Wang
Semiconductor Science and Technology 36 (10), 104001, 2021
272021
Variability Study of Ferroelectric Field-Effect Transistors towards 7nm Technology Node
G Choe, S Yu
IEEE Journal of the Electron Devices Society, 2021
212021
3D AND-type ferroelectric transistors for compute-in-memory and the variability analysis
G Choe, A Lu, S Yu
IEEE Electron Device Letters 43 (2), 304-307, 2021
182021
Impact of Random Phase Distribution in Ferroelectric Transistors based 3D nand Architecture on In-Memory Computing
G Choe, W Shim, J Hur, P Wang, AI Khan, S Yu
IEEE Transactions on Electron Devices, 2021
172021
Variability analysis for ferroelectric field-effect transistors
G Choe, S Yu
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2021
142021
Interplay of switching characteristics, cycling endurance and multilevel retention of ferroelectric capacitor
J Hur, P Wang, Z Wang, G Choe, N Tasneem, AI Khan, S Yu
2020 IEEE International Electron Devices Meeting (IEDM), 39.5. 1-39.5. 4, 2020
142020
Compute-in-memory: From device innovation to 3D system integration
S Yu, W Shim, J Hur, Y Luo, G Choe, W Li, A Lu, X Peng
ESSDERC 2021-IEEE 51st European Solid-State Device Research Conference …, 2021
102021
Gate-induced drain leakage (GIDL) in MFMIS and MFIS negative capacitance FinFETs
J Min, G Choe, C Shin
Current Applied Physics 20 (11), 1222-1225, 2020
102020
Multigate Ferroelectric Transistor Design Toward 3-nm Technology Node
G Choe, S Yu
IEEE Transactions on Electron Devices, 2021
92021
Ferroelectric-gated Nanoelectromechanical Nonvolatile Memory Cell
K Choe, C Shin
IEEE Transactions on Electron Devices, 2018
92018
Machine learning assisted statistical variation analysis of ferroelectric transistors: From experimental metrology to predictive modeling
G Choe, PV Ravindran, A Lu, J Hur, M Lederer, A Reck, S Lombardo, ...
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022
82022
Experimental RF characterization of ferroelectric hafnium zirconium oxide material at GHz for microwave applications
B Lin, G Choe, J Hur, AI Khan, S Yu, H Wang
2021 Device Research Conference (DRC), 1-2, 2021
82021
Machine learning-assisted statistical variation analysis of ferroelectric transistor: From experimental metrology to adaptive modeling
G Choe, PV Ravindran, J Hur, M Lederer, A Reck, A Khan, S Yu
IEEE Transactions on Electron Devices 70 (4), 2015-2020, 2023
52023
Impact of Random Phase Distribution in 3D Vertical NAND Architecture of Ferroelectric Transistors on In-Memory Computing
G Choe, W Shim, J Hur, AI Khan, S Yu
International Conference on Simulation of Semiconductor Processes and …, 2020
52020
Impact of negative capacitance on the energy-delay property of an electro-mechanical relay
K Choe, C Shin
Japanese Journal of Applied Physics, 2019
52019
Characterizing HfO2-Based Ferroelectric Tunnel Junction in Cryogenic Temperature
J Hur, C Park, G Choe, PV Ravindran, AI Khan, S Yu
IEEE Transactions on Electron Devices 69 (10), 5948-5951, 2022
42022
Energy-Delay Sensitivity Analysis of a Nanoelectromechanical Relay With the Negative Capacitance of a Ferroelectric Capacitor
C Yoon, G Choe, C Shin
IEEE Journal of Electron Device Society, 2020
42020
Theoretical study of ferroelectric-gated nanoelectromechanical diode nonvolatile memory cell
K Choe, J Park, C Shin
Solid-State Electronics, 2019
32019
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Articles 1–20