Shu Yang
Shu Yang
Zhejiang University; HKUST; University of Cambridge
Verified email at zju.edu.cn
Title
Cited by
Cited by
Year
The 2018 GaN power electronics roadmap
H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ...
Journal of Physics D: Applied Physics 51 (16), 163001, 2018
2762018
Effective passivation of AlGaN/GaN HEMTs by ALD-grown AlN thin film
S Huang, Q Jiang, S Yang, C Zhou, KJ Chen
IEEE Electron Device Letters 33 (4), 516-518, 2012
1842012
Threshold voltage instability in Al2O3/GaN/AlGaN/GaN metal–insulator–semiconductor high-electron mobility transistors
S Huang, S Yang, J Roberts, KJ Chen
Japanese journal of applied physics 50 (11R), 110202, 2011
1802011
600-V Normally Off/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse
Z Tang, Q Jiang, Y Lu, S Huang, S Yang, X Tang, KJ Chen
IEEE Electron Device Letters 34 (11), 1373-1375, 2013
1762013
High-Quality Interface in MIS Structures With In Situ Pre-Gate Plasma Nitridation
S Yang, Z Tang, KY Wong, YS Lin, C Liu, Y Lu, S Huang, KJ Chen
IEEE Electron Device Letters 34 (12), 1497-1499, 2013
1272013
Mechanism of PEALD-grown AlN passivation for AlGaN/GaN HEMTs: Compensation of interface traps by polarization charges
S Huang, Q Jiang, S Yang, Z Tang, KJ Chen
IEEE electron device letters 34 (2), 193-195, 2013
922013
Al2O3/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer
S Liu, S Yang, Z Tang, Q Jiang, C Liu, M Wang, KJ Chen
IEEE electron device letters 35 (7), 723-725, 2014
812014
Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs
M Hua, C Liu, S Yang, S Liu, K Fu, Z Dong, Y Cai, B Zhang, KJ Chen
IEEE Transactions on Electron Devices 62 (10), 3215-3222, 2015
672015
Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer
S Liu, S Yang, Z Tang, Q Jiang, C Liu, M Wang, B Shen, KJ Chen
Applied Physics Letters 106 (5), 051605, 2015
612015
Characterization of VT‐instability in enhancement‐mode Al2O3‐AlGaN/GaN MIS‐HEMTs
Y Lu, S Yang, Q Jiang, Z Tang, B Li, KJ Chen
physica status solidi (c) 10 (11), 1397-1400, 2013
612013
GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNxas Gate Dielectric
M Hua, C Liu, S Yang, S Liu, K Fu, Z Dong, Y Cai, B Zhang, KJ Chen
IEEE Electron Device Letters 36 (5), 448-450, 2015
592015
Mapping of interface traps in high-performance Al2O3/AlGaN/GaN MIS-heterostructures using frequency- and temperature-dependent C-V techniques
S Yang, Z Tang, KY Wong, YS Lin, Y Lu, S Huang, KJ Chen
2013 IEEE International Electron Devices Meeting, 6.3. 1-6.3. 4, 2013
552013
AC-capacitance techniques for interface trap analysis in GaN-based buried-channel MIS-HEMTs
S Yang, S Liu, Y Lu, C Liu, KJ Chen
IEEE Transactions on Electron Devices 62 (6), 1870-1878, 2015
502015
Investigation of buffer traps in AlGaN/GaN-on-Si devices by thermally stimulated current spectroscopy and back-gating measurement
S Yang, C Zhou, Q Jiang, J Lu, B Huang, KJ Chen
Applied physics letters 104 (1), 013504, 2014
502014
O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors
S Huang, X Liu, K Wei, G Liu, X Wang, B Sun, X Yang, B Shen, C Liu, ...
Applied Physics Letters 106 (3), 033507, 2015
492015
Fabrication and Characterization of Enhancement-Mode High--AlGaN/GaN MIS-HEMTs
S Yang, S Huang, M Schnee, QT Zhao, J Schubert, KJ Chen
IEEE transactions on electron devices 60 (10), 3040-3046, 2013
462013
AlGaN/GaN MISHEMTs With High-Gate Dielectric
S Yang, S Huang, H Chen, C Zhou, Q Zhou, M Schnee, QT Zhao, ...
IEEE Electron Device Letters 33 (7), 979-981, 2012
402012
Thermally stable enhancement-mode GaN metal-isolator-semiconductor high-electron-mobility transistor with partially recessed fluorine-implanted barrier
C Liu, S Yang, S Liu, Z Tang, H Wang, Q Jiang, KJ Chen
IEEE Electron Device Letters 36 (4), 318-320, 2015
392015
High- High Johnson's Figure-of-Merit 0.2- Gate AlGaN/GaN HEMTs on Silicon Substrate With Passivation
S Huang, K Wei, G Liu, Y Zheng, X Wang, L Pang, X Kong, X Liu, Z Tang, ...
IEEE Electron Device Letters 35 (3), 315-317, 2014
372014
Dynamic on-State Resistance Test and Evaluation of GaN Power Devices Under Hard- and Soft-Switching Conditions by Double and Multiple Pulses
R Li, X Wu, S Yang, K Sheng
IEEE Transactions on Power Electronics 34 (2), 1044-1053, 2018
362018
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