The 2018 GaN power electronics roadmap H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ... Journal of Physics D: Applied Physics 51 (16), 163001, 2018 | 1053 | 2018 |
Effective passivation of AlGaN/GaN HEMTs by ALD-grown AlN thin film S Huang, Q Jiang, S Yang, C Zhou, KJ Chen IEEE Electron Device Letters 33 (4), 516-518, 2012 | 281 | 2012 |
600-V Normally Off /AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse Z Tang, Q Jiang, Y Lu, S Huang, S Yang, X Tang, KJ Chen IEEE Electron Device Letters 34 (11), 1373-1375, 2013 | 275 | 2013 |
Threshold voltage instability in Al2O3/GaN/AlGaN/GaN metal–insulator–semiconductor high-electron mobility transistors S Huang, S Yang, J Roberts, KJ Chen Japanese journal of applied physics 50 (11R), 110202, 2011 | 230 | 2011 |
High-Quality Interface in MIS Structures With In Situ Pre-Gate Plasma Nitridation S Yang, Z Tang, KY Wong, YS Lin, C Liu, Y Lu, S Huang, KJ Chen IEEE Electron Device Letters 34 (12), 1497-1499, 2013 | 185 | 2013 |
Dynamic on-State Resistance Test and Evaluation of GaN Power Devices Under Hard- and Soft-Switching Conditions by Double and Multiple Pulses R Li, X Wu, S Yang, K Sheng IEEE Transactions on Power Electronics 34 (2), 1044-1053, 2018 | 161 | 2018 |
Mechanism of PEALD-grown AlN passivation for AlGaN/GaN HEMTs: Compensation of interface traps by polarization charges S Huang, Q Jiang, S Yang, Z Tang, KJ Chen IEEE electron device letters 34 (2), 193-195, 2013 | 136 | 2013 |
Al2O3/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer S Liu, S Yang, Z Tang, Q Jiang, C Liu, M Wang, KJ Chen IEEE electron device letters 35 (7), 723-725, 2014 | 126 | 2014 |
High-Voltage and High- Vertical GaN-on-GaN Schottky Barrier Diode With Nitridation-Based Termination S Han, S Yang, K Sheng IEEE Electron Device Letters 39 (4), 572-575, 2018 | 115 | 2018 |
Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs M Hua, C Liu, S Yang, S Liu, K Fu, Z Dong, Y Cai, B Zhang, KJ Chen IEEE Transactions on Electron Devices 62 (10), 3215-3222, 2015 | 113 | 2015 |
Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer S Liu, S Yang, Z Tang, Q Jiang, C Liu, M Wang, B Shen, KJ Chen Applied Physics Letters 106 (5), 2015 | 107 | 2015 |
Dynamic on-resistance in GaN power devices: Mechanisms, characterizations, and modeling S Yang, S Han, K Sheng, KJ Chen IEEE Journal of Emerging and Selected Topics in Power Electronics 7 (3 …, 2019 | 106 | 2019 |
AC-capacitance techniques for interface trap analysis in GaN-based buried-channel MIS-HEMTs S Yang, S Liu, Y Lu, C Liu, KJ Chen IEEE Transactions on Electron Devices 62 (6), 1870-1878, 2015 | 104 | 2015 |
GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNxas Gate Dielectric M Hua, C Liu, S Yang, S Liu, K Fu, Z Dong, Y Cai, B Zhang, KJ Chen IEEE Electron Device Letters 36 (5), 448-450, 2015 | 97 | 2015 |
Mapping of interface traps in high-performance Al2O3/AlGaN/GaN MIS-heterostructures using frequency- and temperature-dependent C-V techniques S Yang, Z Tang, KY Wong, YS Lin, Y Lu, S Huang, KJ Chen 2013 IEEE International Electron Devices Meeting, 6.3. 1-6.3. 4, 2013 | 90 | 2013 |
Characterization of VT‐instability in enhancement‐mode Al2O3‐AlGaN/GaN MIS‐HEMTs Y Lu, S Yang, Q Jiang, Z Tang, B Li, KJ Chen physica status solidi (c) 10 (11), 1397-1400, 2013 | 89 | 2013 |
Impact of substrate bias polarity on buffer-related current collapse in AlGaN/GaN-on-Si power devices S Yang, C Zhou, S Han, J Wei, K Sheng, KJ Chen IEEE Transactions on Electron Devices 64 (12), 5048-5056, 2017 | 78 | 2017 |
Thermally stable enhancement-mode GaN metal-isolator-semiconductor high-electron-mobility transistor with partially recessed fluorine-implanted barrier C Liu, S Yang, S Liu, Z Tang, H Wang, Q Jiang, KJ Chen IEEE Electron Device Letters 36 (4), 318-320, 2015 | 69 | 2015 |
Fluorine-implanted termination for vertical GaN Schottky rectifier with high blocking voltage and low forward voltage drop S Han, S Yang, K Sheng IEEE Electron Device Letters 40 (7), 1040-1043, 2019 | 68 | 2019 |
O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors S Huang, X Liu, K Wei, G Liu, X Wang, B Sun, X Yang, B Shen, C Liu, ... Applied Physics Letters 106 (3), 2015 | 68 | 2015 |