Tunable band gap and doping type in silicene by surface adsorption: towards tunneling transistors Z Ni, H Zhong, X Jiang, R Quhe, G Luo, Y Wang, M Ye, J Yang, J Shi, J Lu Nanoscale 6 (13), 7609-7618, 2014 | 186 | 2014 |
High‐Output‐Power Ultraviolet Light Source from Quasi‐2D GaN Quantum Structure X Rong, X Wang, SV Ivanov, X Jiang, G Chen, P Wang, W Wang, C He, ... Advanced Materials 28 (36), 7978-7983, 2016 | 80 | 2016 |
Band Gap Opening of Graphene by Forming Heterojunctions with the 2D Carbonitrides Nitrogenated Holey Graphene, g-C3N4, and g-CN: Electric Field Effect X Cao, J Shi, M Zhang, X Jiang, H Zhong, P Huang, Y Ding, M Wu The Journal of Physical Chemistry C 120 (20), 11299-11305, 2016 | 46 | 2016 |
Origin of 3.45 ev emission line and yellow luminescence band in GaN nanowires: Surface microwire and defect P Huang, H Zong, J Shi, M Zhang, X Jiang, H Zhong, Y Ding, Y He, J Lu, ... ACS nano 9 (9), 9276-9283, 2015 | 46 | 2015 |
Anomalous light emission and wide photoluminescence spectra in graphene quantum dot: quantum confinement from edge microstructure P Huang, J Shi, M Zhang, X Jiang, H Zhong, Y Ding, X Cao, M Wu, J Lu The Journal of Physical Chemistry Letters 7 (15), 2888-2892, 2016 | 31 | 2016 |
Enhancement of TE polarized light extraction efficiency in nanoscale (AlN) m/(GaN) n (m> n) superlattice substitution for Al-rich AlGaN disorder alloy: ultra-thin GaN layer … X Jiang, J Shi, M Zhang, H Zhong, P Huang, Y Ding, T Yu, B Shen, J Lu, ... New Journal of Physics 16 (11), 113065, 2014 | 20 | 2014 |
Towards the standardization of quantum state verification using optimal strategies X Jiang, K Wang, K Qian, Z Chen, Z Chen, L Lu, L Xia, F Song, S Zhu, ... npj Quantum Information 6 (1), 90, 2020 | 18 | 2020 |
Quantum teleportation mediated by surface plasmon polariton XH Jiang, P Chen, KY Qian, ZZ Chen, SQ Xu, YB Xie, SN Zhu, XS Ma Scientific Reports 10 (1), 11503, 2020 | 15 | 2020 |
Reducing Mg acceptor activation-energy in Al 0.83 Ga 0.17 N disorder alloy substituted by nanoscale (AlN) 5/(GaN) 1 superlattice using Mg Ga δ-doping: Mg local-structure effect H Zhong, J Shi, M Zhang, X Jiang, P Huang, Y Ding Scientific reports 4 (1), 1-6, 2014 | 12 | 2014 |
Improvement of n-type conductivity in hexagonal boron nitride monolayers by doping, strain and adsorption Y Ding, J Shi, M Zhang, X Jiang, H Zhong, P Huang, M Wu, X Cao RSC advances 6 (35), 29190-29196, 2016 | 10 | 2016 |
Band edge modulation and light emission in InGaN nanowires due to the surface state and microscopic indium distribution T Zhou, J Shi, M Zhang, M Yang, H Zhong, X Jiang, P Huang The Journal of Physical Chemistry C 117 (31), 16231-16237, 2013 | 7 | 2013 |
Breakthrough of the p-type doping bottleneck in ZnO by inserting an ultrathin ZnX (X= S, Se and Te) layer doped with NX or AgZn X Jiang, J Shi, M Zhang, H Zhong, P Huang, Y Ding, X Cao, M Wu, Z Liao Journal of Physics D: Applied Physics 49 (9), 095104, 2016 | 6 | 2016 |
Reduction of the Mg acceptor activation energy in GaN, AlN, Al0. 83Ga0. 17N and MgGa δ-doping (AlN) 5/(GaN) 1: the strain effect XH Jiang, JJ Shi, M Zhang, HX Zhong, P Huang, YM Ding, YP He, X Cao Journal of Physics D: Applied Physics 48 (47), 475104, 2015 | 6 | 2015 |
Improving p-type doping efficiency in Al0.83Ga0.17N alloy substituted by nanoscale (AlN)5/(GaN)1 superlattice with MgGa-ON δ-codoping: Role of O-atom … H Zhong, J Shi, M Zhang, X Jiang, P Huang, Y Ding AIP Advances 5 (1), 017114, 2015 | 6 | 2015 |
Improvement of p-type conductivity in Al-rich AlGaN substituted by MgGa δ-doping (AlN) m/(GaN) n (m≥ n) superlattice X Jiang, J Shi, M Zhang, H Zhong, P Huang, Y Ding, M Wu, X Cao, ... Journal of Alloys and Compounds 686, 484-488, 2016 | 5 | 2016 |
Origin of a Wide and Asymmetric Blue Luminescence Band in AlN Nanowires: VN, VAl, ON, and 3ON–VAl Surface Defects Y Ding, J Shi, M Zhang, X Jiang, H Zhong, P Huang, Y He, X Cao The Journal of Physical Chemistry C 119 (37), 21688-21693, 2015 | 4 | 2015 |
High-quality quantum process tomography of time-bin qubit’s transmission over a metropolitan fiber network and its application XSM Peiyu Zhang, Liangliang Lu, Fangchao Qu, Xinhe Jiang, Xiaodong Zheng ... Chinese Optics Letters 18 (8), 082701, 2020 | 3 | 2020 |
Modulation of electronic and optical properties of ZnO by inserting an ultrathin ZnX (X= S, Se and Te) layer to form short-period (ZnO) 5/(ZnX) 1 superlattice X Jiang, J Shi, M Zhang, H Zhong, P Huang, Y Ding, X Cao, M Wu Journal of Alloys and Compounds 711, 581-591, 2017 | 3 | 2017 |
Band edge modulation and interband optical transition in AlN: Mg-O nanotubes P Huang, J Shi, M Zhang, X Jiang, H Zhong, Y Ding, J Lu, X Wang Materials Research Express 1 (2), 025030, 2014 | 2 | 2014 |
Improving p-type doping efficiency in Al {sub 0.83} Ga {sub 0.17} N alloy substituted by nanoscale (AlN){sub 5}/(GaN){sub 1} superlattice with Mg {sub Ga}-O {sub N} δ-codoping … H Zhong, J Shi, X Jiang, P Huang, Y Ding, M Zhang AIP Advances 5 (1), 2015 | | 2015 |