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Xinhe Jiang
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Tunable band gap and doping type in silicene by surface adsorption: towards tunneling transistors
Z Ni, H Zhong, X Jiang, R Quhe, G Luo, Y Wang, M Ye, J Yang, J Shi, J Lu
Nanoscale 6 (13), 7609-7618, 2014
1862014
High‐Output‐Power Ultraviolet Light Source from Quasi‐2D GaN Quantum Structure
X Rong, X Wang, SV Ivanov, X Jiang, G Chen, P Wang, W Wang, C He, ...
Advanced Materials 28 (36), 7978-7983, 2016
802016
Band Gap Opening of Graphene by Forming Heterojunctions with the 2D Carbonitrides Nitrogenated Holey Graphene, g-C3N4, and g-CN: Electric Field Effect
X Cao, J Shi, M Zhang, X Jiang, H Zhong, P Huang, Y Ding, M Wu
The Journal of Physical Chemistry C 120 (20), 11299-11305, 2016
462016
Origin of 3.45 ev emission line and yellow luminescence band in GaN nanowires: Surface microwire and defect
P Huang, H Zong, J Shi, M Zhang, X Jiang, H Zhong, Y Ding, Y He, J Lu, ...
ACS nano 9 (9), 9276-9283, 2015
462015
Anomalous light emission and wide photoluminescence spectra in graphene quantum dot: quantum confinement from edge microstructure
P Huang, J Shi, M Zhang, X Jiang, H Zhong, Y Ding, X Cao, M Wu, J Lu
The Journal of Physical Chemistry Letters 7 (15), 2888-2892, 2016
312016
Enhancement of TE polarized light extraction efficiency in nanoscale (AlN) m/(GaN) n (m> n) superlattice substitution for Al-rich AlGaN disorder alloy: ultra-thin GaN layer …
X Jiang, J Shi, M Zhang, H Zhong, P Huang, Y Ding, T Yu, B Shen, J Lu, ...
New Journal of Physics 16 (11), 113065, 2014
202014
Towards the standardization of quantum state verification using optimal strategies
X Jiang, K Wang, K Qian, Z Chen, Z Chen, L Lu, L Xia, F Song, S Zhu, ...
npj Quantum Information 6 (1), 90, 2020
182020
Quantum teleportation mediated by surface plasmon polariton
XH Jiang, P Chen, KY Qian, ZZ Chen, SQ Xu, YB Xie, SN Zhu, XS Ma
Scientific Reports 10 (1), 11503, 2020
152020
Reducing Mg acceptor activation-energy in Al 0.83 Ga 0.17 N disorder alloy substituted by nanoscale (AlN) 5/(GaN) 1 superlattice using Mg Ga δ-doping: Mg local-structure effect
H Zhong, J Shi, M Zhang, X Jiang, P Huang, Y Ding
Scientific reports 4 (1), 1-6, 2014
122014
Improvement of n-type conductivity in hexagonal boron nitride monolayers by doping, strain and adsorption
Y Ding, J Shi, M Zhang, X Jiang, H Zhong, P Huang, M Wu, X Cao
RSC advances 6 (35), 29190-29196, 2016
102016
Band edge modulation and light emission in InGaN nanowires due to the surface state and microscopic indium distribution
T Zhou, J Shi, M Zhang, M Yang, H Zhong, X Jiang, P Huang
The Journal of Physical Chemistry C 117 (31), 16231-16237, 2013
72013
Breakthrough of the p-type doping bottleneck in ZnO by inserting an ultrathin ZnX (X= S, Se and Te) layer doped with NX or AgZn
X Jiang, J Shi, M Zhang, H Zhong, P Huang, Y Ding, X Cao, M Wu, Z Liao
Journal of Physics D: Applied Physics 49 (9), 095104, 2016
62016
Reduction of the Mg acceptor activation energy in GaN, AlN, Al0. 83Ga0. 17N and MgGa δ-doping (AlN) 5/(GaN) 1: the strain effect
XH Jiang, JJ Shi, M Zhang, HX Zhong, P Huang, YM Ding, YP He, X Cao
Journal of Physics D: Applied Physics 48 (47), 475104, 2015
62015
Improving p-type doping efficiency in Al0.83Ga0.17N alloy substituted by nanoscale (AlN)5/(GaN)1 superlattice with MgGa-ON δ-codoping: Role of O-atom …
H Zhong, J Shi, M Zhang, X Jiang, P Huang, Y Ding
AIP Advances 5 (1), 017114, 2015
62015
Improvement of p-type conductivity in Al-rich AlGaN substituted by MgGa δ-doping (AlN) m/(GaN) n (m≥ n) superlattice
X Jiang, J Shi, M Zhang, H Zhong, P Huang, Y Ding, M Wu, X Cao, ...
Journal of Alloys and Compounds 686, 484-488, 2016
52016
Origin of a Wide and Asymmetric Blue Luminescence Band in AlN Nanowires: VN, VAl, ON, and 3ON–VAl Surface Defects
Y Ding, J Shi, M Zhang, X Jiang, H Zhong, P Huang, Y He, X Cao
The Journal of Physical Chemistry C 119 (37), 21688-21693, 2015
42015
High-quality quantum process tomography of time-bin qubit’s transmission over a metropolitan fiber network and its application
XSM Peiyu Zhang, Liangliang Lu, Fangchao Qu, Xinhe Jiang, Xiaodong Zheng ...
Chinese Optics Letters 18 (8), 082701, 2020
32020
Modulation of electronic and optical properties of ZnO by inserting an ultrathin ZnX (X= S, Se and Te) layer to form short-period (ZnO) 5/(ZnX) 1 superlattice
X Jiang, J Shi, M Zhang, H Zhong, P Huang, Y Ding, X Cao, M Wu
Journal of Alloys and Compounds 711, 581-591, 2017
32017
Band edge modulation and interband optical transition in AlN: Mg-O nanotubes
P Huang, J Shi, M Zhang, X Jiang, H Zhong, Y Ding, J Lu, X Wang
Materials Research Express 1 (2), 025030, 2014
22014
Improving p-type doping efficiency in Al {sub 0.83} Ga {sub 0.17} N alloy substituted by nanoscale (AlN){sub 5}/(GaN){sub 1} superlattice with Mg {sub Ga}-O {sub N} δ-codoping …
H Zhong, J Shi, X Jiang, P Huang, Y Ding, M Zhang
AIP Advances 5 (1), 2015
2015
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