| Investigation of sidewall damage induced by reactive ion etching on AlGaInP MESA for micro-LED application Y Boussadi, N Rochat, JP Barnes, BB Bakir, P Ferrandis, B Masenelli, ... Journal of Luminescence 234, 117937, 2021 | 46 | 2021 |
| Effects of negative bias stress on trapping properties of AlGaN/GaN Schottky barrier diodes P Ferrandis, M Charles, C Gillot, R Escoffier, E Morvan, A Torres, ... Microelectronic Engineering 178, 158-163, 2017 | 15 | 2017 |
| Deep-level transient spectroscopy of interfacial states in “buffer-free” pin GaSb/GaAs devices M Aziz, P Ferrandis, A Mesli, R Hussain Mari, J Francisco Felix, A Sellai, ... Journal of Applied Physics 114 (13), 2013 | 13 | 2013 |
| Ion-assisted gate recess process induced damage in GaN channel of AlGaN/GaN Schottky barrier diodes studied by deep level transient spectroscopy P Ferrandis, M Charles, Y Baines, J Buckley, G Garnier, C Gillot, ... Japanese Journal of Applied Physics 56 (4S), 04CG01, 2017 | 12 | 2017 |
| Growth and characterization of Ge islands on Si (1 1 0) P Ferrandis, L Vescan Materials Science and Engineering: B 89 (1-3), 171-175, 2002 | 12 | 2002 |
| Study of deep traps in AlGaN/GaN high-electron mobility transistors by electrical characterization and simulation philippe Ferrandis, M El-Khatib, MA Jaud, E Morvan, M Charles, G Guillot, ... Journal of Applied Physics 125 (3), 035702, 2019 | 10 | 2019 |
| Electrical properties of metal/Al2O3/In0. 53Ga0. 47As capacitors grown on InP P Ferrandis, M Billaud, J Duvernay, M Martin, A Arnoult, H Grampeix, ... Journal of Applied Physics 123 (16), 2018 | 8 | 2018 |
| Characterization of micro-pixelated InGaP/AlGaInP quantum well structures Y Boussadi, N Rochat, JP Barnes, BB Bakir, P Ferrandis, B Masenelli, ... Proc SPIE 11302, 1130221, 2020 | 5 | 2020 |
| Gate length effect on trapping properties in AlGaN/GaN high-electron-mobility transistors P Ferrandis, M El-Khatib, MA Jaud, E Morvan, M Charles, G Guillot, ... Semiconductor Science and Technology 34 (4), 045011, 2019 | 4 | 2019 |
| Ferroelectric Bi3. 25La0. 75Ti3O12 thin films on a conductive Sr4Ru2O9 electrode obtained by pulsed laser deposition R Chmielowski, V Madigou, P Ferrandis, R Zalecki, M Blicharski, ... Thin solid films 515 (16), 6314-6318, 2007 | 4 | 2007 |
| Analysis of hole-like traps in deep level transient spectroscopy spectra of AlGaN/GaN heterojunctions P Ferrandis, M Charles, M Veillerot, C Gillot Journal of Physics D: Applied Physics 53 (18), 185105, 2020 | 3 | 2020 |
| Optical characterisation of Ge islands grown on Si (110) P Ferrandis, L Vescan, B Holländer Microelectronics journal 33 (7), 541-546, 2002 | 3 | 2002 |
| Transport properties of a thin GaN channel formed in an Al0. 9Ga0. 1N/GaN heterostructure grown on AlN/sapphire template J Bassaler, R Comyn, C Bougerol, Y Cordier, F Medjdoub, P Ferrandis Journal of Applied Physics 131 (12), 2022 | 2 | 2022 |
| Influence of an epitaxial Si capping of Ge islands on Si (0 0 1) and Si (1 1 0) by LPCVD P Ferrandis, L Vescan, B Holländer, V Dashtizadeh, C Dieker Physica E: Low-dimensional Systems and Nanostructures 17, 507-509, 2003 | 2 | 2003 |
| Surface defects related to polishing cycle in ß-Ga2O3 crystals grown by floating zone C Perrier, A Traoré, T Ito, H Umezawa, E Gheeraert, P Ferrandis Applied Physics Letters 122 (22), 222105, 2023 | 1 | 2023 |
| High Al-content AlGaN channel high electron mobility transistors on silicon substrate J Mehta, I Abid, J Bassaler, J Pernot, P Ferrandis, M Nemoz, Y Cordier, ... e-Prime-Advances in Electrical Engineering, Electronics and Energy 3, 100114, 2023 | 1 | 2023 |
| Towards high buffer breakdown field and high temperature stability AlGaN channel HEMTs on silicon substrate J Mehta, I Abid, J Bassaler, J Pernot, P Ferrandis, S Rennesson, TH Ngo, ... 2022 Compound Semiconductor Week (CSW), 1-2, 2022 | 1 | 2022 |
| Deep traps localization in AlGaN/GaN MIS-HEMTs by a comparative study using capacitance and current deep level transient spectroscopies M El-Khatib, P Ferrandis, E Morvan, G Guillot, G Brémond Journal of Physics: Conference Series 1190, 012013, 2019 | 1 | 2019 |
| Anisotropic mobility in AlGaN/GaN heterostructure with thin GaN on AlN/Sapphire template J Bassaler, R Comyn, C Bougerol, Y Cordier, F Medjdoub, P Ferrandis WOCSDICE EXMATEC 2022, 2022 | | 2022 |
| Characterization and role of deep traps on the radio frequency performances of high resistivity substrates E Vandermolen, P Ferrandis, F Allibert, M Nabet, M Rack, JP Raskin, ... Journal of Applied Physics 129 (21), 2021 | | 2021 |
