| Towards p-type conduction in hexagonal boron nitride: doping study and electrical measurements analysis of HBN/algan heterojunctions A Mballo, A Srivastava, S Sundaram, P Vuong, S Karrakchou, Y Halfaya, ... Nanomaterials 11 (1), 211, 2021 | 16 | 2021 |
| Influence of sapphire substrate orientation on the van der waals epitaxy of III-nitrides on 2D hexagonal boron nitride: implication for optoelectronic devices P Vuong, S Sundaram, V Ottapilakkal, G Patriarche, L Largeau, ... ACS Applied Nano Materials 5 (1), 791-800, 2022 | 15 | 2022 |
| Single crystalline boron rich B (Al) N alloys grown by MOVPE P Vuong, A Mballo, S Sundaram, G Patriarche, Y Halfaya, S Karrakchou, ... Applied Physics Letters 116 (4), 2020 | 15 | 2020 |
| Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates S Karrakchou, S Sundaram, T Ayari, A Mballo, P Vuong, A Srivastava, ... Scientific Reports 10 (1), 21709, 2020 | 13 | 2020 |
| Natural Boron and 10B-Enriched Hexagonal Boron Nitride for High-Sensitivity Self-Biased Metal–Semiconductor–Metal Neutron Detectors A Mballo, A Ahaitouf, S Sundaram, A Srivastava, V Ottapilakkal, R Gujrati, ... ACS omega 7 (1), 804-809, 2021 | 8 | 2021 |
| Multiple Shapes Micro‐LEDs with Defect Free Sidewalls and Simple Liftoff and Transfer Using Selective Area Growth on Hexagonal Boron Nitride Template R Gujrati, A Srivastava, P Vuong, V Ottapilakkal, YN Sama, TH Ngo, ... Advanced Materials Technologies 8 (15), 2300147, 2023 | 4 | 2023 |
| Suppression of harmonics in DFIG based WECS using passive LCL filter A Mishra, M Singh, A Srivastava, K Chatterjee 2018 International Conference on Power Energy, Environment and Intelligent …, 2018 | 4 | 2018 |
| Scaling up of Growth, Fabrication, and Device Transfer Process for GaN‐based LEDs on H‐BN Templates to 6‐inch Sapphire Substrates P Vuong, T Moudakir, R Gujrati, A Srivastava, V Ottapilakkal, S Gautier, ... Advanced Materials Technologies 8 (18), 2300600, 2023 | 3 | 2023 |
| Photoinduced doping in hexagonal boron nitride A Perepeliuc, R Gujrati, A Srivastava, P Vuong, V Ottapilakkal, PL Voss, ... Applied Physics Letters 122 (26), 2023 | 2 | 2023 |
| Van der Waals epitaxy of nitride optoelectronic devices based on two-dimensional hBN A Ougazzaden, S Sundaram, P Vuong, A Mballo, G Patriarche, ... Gallium Nitride Materials and Devices XVI 11686, 116861G, 2021 | 2 | 2021 |
| An Efficient Co-ordinated Control Scheme for Transient Stability Enhancement of DFIG based Wind Energy Conversion System A Srivastava, SS Sahoo, S Vats, K Chatterjee 2017 14th IEEE India Council International Conference (INDICON), 1-6, 2017 | 2 | 2017 |
| Wafer-scale van der Waals Epitaxy of III-Nitride Devices on h-BN-An Overview of 2D/3D Epitaxy, Device Fabrication, Mechanical Release-Transfer Methods and Device Performances A Ougazzaden, S Sundaram, TQP Vuong, S Karrakchou, A Mballo, ... MRS 2021, 2021 | | 2021 |
| Van der Waals epitaxy by MOCVD of III-Nitrides using two-dimensional hexagonal boron nitride: applications and persperctives TQP Vuong, A Mballo, S Karrakchou, A Srivastava, R Gujrati, H Adjmi, ... Workshop Wide bandgap materials, 2021 | | 2021 |
| Side-by-side comparison of pre-and post-transferred LEDs grown on 2D hexagonal boron nitride onto arbitrary substrates S Karrakchou, S Sundaram, T Ayari, A Mballo, P Vuong, A Srivastava, ... Gallium Nitride Materials and Devices XVI 11686, 1168619, 2021 | | 2021 |
