| Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application R Sarkar, S Bhunia, D Nag, BC Barik, K Das Gupta, D Saha, S Ganguly, ... Applied Physics Letters 115 (6), 063502, 2019 | 18 | 2019 |
| Epi-Gd₂O₃-MOSHEMT: A Potential Solution Toward Leveraging the Application of AlGaN/GaN/Si HEMT With Improved ION/IOFF Operating at 473 K R Sarkar, BB Upadhyay, S Bhunia, RS Pokharia, D Nag, S Surapaneni, ... IEEE Transactions on Electron Devices, 2021 | 11 | 2021 |
| Epitaxial Ge-Gd2O3 on Si (111) Substrate by Sputtering for Germanium-on-Insulator Applications A Rawat, KK Roluahpuia, P Gribisch, HJ Osten, A Laha, S Mahapatra, ... Thin Solid Films, 138732, 2021 | 8 | 2021 |
| Influence of nanostructure formation on the crystal structure and morphology of epitaxially grown Gd2O3 on Si (001) P Gribisch, J Schmidt, HJ Osten, A Fissel Acta Crystallographica Section B: Structural Science, Crystal Engineering …, 2019 | 7 | 2019 |
| Tuning of structural and dielectric properties of Gd2O3 grown on Si(001) P Gribisch, A Fissel Journal of Applied Physics 128 (5), 055108, 2020 | 6 | 2020 |
| Tuning of Quasi-Vertical GaN FinFETs Fabricated on SiC Substrates P Gribisch, RD Carrascon, V Darakchieva, E Lind IEEE Transactions on Electron Devices, 2023 | 5 | 2023 |
| Formation of self-assembled Gd 2 O 3 nanowire-like structures during epitaxial growth on Si (001) P Gribisch, A Fissel RSC Advances 11 (29), 17526-17536, 2021 | 3 | 2021 |
| Growth and Dielectric Properties of Monoclinic Gd2O3 on Si (001) P Gribisch, AR Chaudhuri, A Fissel ECS Transactions 93 (1), 57, 2019 | 2 | 2019 |
| Interfacial layer formation during the growth of Gd2O3 on Si (001) and its thermal stability P Gribisch, A Fissel Semiconductor Science and Technology 36 (11), 115016, 2021 | 1 | 2021 |
| Impact of surface phase coexistence on the development of step-free areas on Si (111) A Fissel, AR Chaudhuri, J Krügener, P Gribisch, HJ Osten Frontiers of Materials Science 9 (2), 141-146, 2015 | 1 | 2015 |
| Capacitance and Mobility Evaluation for Normally-Off Fully-Vertical GaN FinFETs P Gribisch, RD Carrascon, V Darakchieva, E Lind IEEE Transactions on Electron Devices, 2023 | | 2023 |
| Einfluss der Präparationsbedingungen auf die strukturellen und dielektrischen Eigenschaften von Gd2O3-Schichten gewachsen mit Molekularstrahlepitaxie auf Si (001) P Gribisch Hannover: Institutionelles Repositorium der Leibniz Universität Hannover, 2020 | | 2020 |
