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Philipp Gribisch
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Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application
R Sarkar, S Bhunia, D Nag, BC Barik, K Das Gupta, D Saha, S Ganguly, ...
Applied Physics Letters 115 (6), 063502, 2019
202019
Epi-Gd₂O₃-MOSHEMT: A Potential Solution Toward Leveraging the Application of AlGaN/GaN/Si HEMT With Improved ION/IOFF Operating at 473 K
R Sarkar, BB Upadhyay, S Bhunia, RS Pokharia, D Nag, S Surapaneni, ...
IEEE Transactions on Electron Devices, 2021
132021
Tuning of Quasi-Vertical GaN FinFETs Fabricated on SiC Substrates
P Gribisch, RD Carrascon, V Darakchieva, E Lind
IEEE Transactions on Electron Devices, 2023
82023
Epitaxial Ge-Gd2O3 on Si (111) Substrate by Sputtering for Germanium-on-Insulator Applications
A Rawat, KK Roluahpuia, P Gribisch, HJ Osten, A Laha, S Mahapatra, ...
Thin Solid Films, 138732, 2021
82021
Influence of nanostructure formation on the crystal structure and morphology of epitaxially grown Gd2O3 on Si (001)
P Gribisch, J Schmidt, HJ Osten, A Fissel
Acta Crystallographica Section B: Structural Science, Crystal Engineering …, 2019
72019
Tuning of structural and dielectric properties of Gd2O3 grown on Si(001)
P Gribisch, A Fissel
Journal of Applied Physics 128 (5), 055108, 2020
62020
Formation of self-assembled Gd 2 O 3 nanowire-like structures during epitaxial growth on Si (001)
P Gribisch, A Fissel
RSC Advances 11 (29), 17526-17536, 2021
42021
Growth and Dielectric Properties of Monoclinic Gd2O3 on Si (001)
P Gribisch, AR Chaudhuri, A Fissel
ECS Transactions 93 (1), 57, 2019
22019
Capacitance and Mobility Evaluation for Normally-Off Fully-Vertical GaN FinFETs
P Gribisch, RD Carrascon, V Darakchieva, E Lind
IEEE Transactions on Electron Devices, 2023
12023
Interfacial layer formation during the growth of Gd2O3 on Si (001) and its thermal stability
P Gribisch, A Fissel
Semiconductor Science and Technology 36 (11), 115016, 2021
12021
Impact of surface phase coexistence on the development of step-free areas on Si (111)
A Fissel, AR Chaudhuri, J Krügener, P Gribisch, HJ Osten
Frontiers of Materials Science 9 (2), 141-146, 2015
12015
Einfluss der Präparationsbedingungen auf die strukturellen und dielektrischen Eigenschaften von Gd2O3-Schichten gewachsen mit Molekularstrahlepitaxie auf Si (001)
P Gribisch
Hannover: Institutionelles Repositorium der Leibniz Universität Hannover, 2020
2020
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