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Donghwan Choi
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Origins of genuine Ohmic van der Waals contact between indium and MoS2
BK Kim, TH Kim, DH Choi, H Kim, K Watanabe, T Taniguchi, H Rho, ...
npj 2D Materials and Applications 5 (1), 9, 2021
602021
Van-der-Waals-gap tunneling spectroscopy for single-wall carbon nanotubes
DH Choi, S Jang, DW Jeong, JO Lee, H Chang, DH Ha, SM Lee, J Kim, ...
Carbon 113, 237-242, 2017
122017
Gate-tunable quantum dot formation between localized-resonant states in a few-layer MoS2
BK Kim, DH Choi, BS Yu, M Kim, K Watanabe, T Taniguchi, JJ Kim, ...
Nanotechnology 32 (19), 195207, 2021
52021
Tunneling spectroscopy for electronic bands in multi-walled carbon nanotubes with van der waals gap
DH Choi, SM Lee, DW Jeong, JO Lee, DH Ha, MH Bae, JJ Kim
Molecules 26 (8), 2128, 2021
32021
Gate-voltage-induced reversible electrical phase transitions in Mo 0.67 W 0.33 Se 2 devices
MS Kim, DH Choi, IH Lee, WS Kim, D Kwon, MH Bae, JJ Kim
Nanoscale 14 (44), 16611-16617, 2022
22022
Indium-contacted van der Waals gap tunneling spectroscopy for van der Waals layered materials
DH Choi, KA Min, S Hong, BK Kim, MH Bae, JJ Kim
Scientific Reports 11 (1), 17790, 2021
22021
Terahertz conductivity of high-quality indium films deposited using a substrate cooling method
G Choi, DH Choi, J Ryeom, DY Park, WS Kim, JJ Kim, YM Bahk, ...
Current Applied Physics 52, 80-84, 2023
12023
Genuine Ohmic van der Waals contact between indium and MoS2
BK Kim, DH Choi, TH Kim, H Kim, K Watanabe, T Taniguchi, H Rho, ...
arXiv preprint arXiv:1904.10295, 2019
12019
Optimization of two major interfaces in MoS2 FETs with low frequency noise analysis
H Ji, DH Choi, B Ahn
Journal of the Korean Physical Society 82 (11), 1098-1104, 2023
2023
Tuning Positive and Negative Transconductance in Multilayer with Indium Contacts
DH Choi, H Ji, GH Han, BH Moon, YH Lee
Physical Review Applied 18 (1), 014068, 2022
2022
Van-der-Waals-gap tunneling spectroscopy for low dimensional materials
DH Choi, JJ Kim, MH Bae, KA Min, SL Hong
APS March Meeting Abstracts 2019, T70. 289, 2019
2019
Band modulation and in situ doping control of carbon-nanotube field-effect transistors by work-function engineering
DH Choi, DW Jeong, JO Lee, MH Bae, JJ Kim
Carbon 130, 475-479, 2018
2018
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Articles 1–12