| Transport properties of polarization-induced 2D electron gases in epitaxial AlScN/GaN heterojunctions J Casamento, TS Nguyen, Y Cho, C Savant, T Vasen, S Afroz, D Hannan, ... Applied Physics Letters 121 (19), 2022 | 14 | 2022 |
| FerroHEMTs: High-current and high-speed all-epitaxial AlScN/GaN ferroelectric transistors J Casamento, K Nomoto, TS Nguyen, H Lee, C Savant, L Li, A Hickman, ... 2022 International Electron Devices Meeting (IEDM), 11.1. 1-11.1. 4, 2022 | 8 | 2022 |
| Efficient and stable activation by microwave annealing of nanosheet silicon doped with phosphorus above its solubility limit CH Tsai, CP Savant, MJ Asadi, YM Lin, I Santos, YH Hsu, J Kowalski, ... Applied Physics Letters 121 (5), 2022 | 6 | 2022 |
| Method of manufacturing semiconductor devices and semiconductor devices CP Savant, CM Tsai, MT Chen, YU Tien-Wei US Patent 11,183,431, 2021 | 5 | 2021 |
| Method of manufacturing a semiconductor device and a semiconductor device SB More, CP Savant, CH Tsai US Patent 11,515,162, 2022 | 4 | 2022 |
| Method and structure for metal gate boundary isolation SB More, CP Savant US Patent 11,658,216, 2023 | 3 | 2023 |
| Gate structure of a semiconductor device and method of forming same SB More, CP Savant, CH Tsai US Patent 11,251,092, 2022 | 3 | 2022 |
| Effect of Underlayer Metallic Coating Composition on Phosphating and the Corrosion Performance for Automobile Applications CP Savant, P Gore, VS Raja Corrosion 77 (8), 866-877, 2021 | 3 | 2021 |
| Semiconductor device and manufacturing method thereof CP Savant, YU Tien-Wei, CM Tsai US Patent 11,495,463, 2022 | 2 | 2022 |
| Trench isolation with conductive structures CP Savant, CM Tsai, FAN Yuh-Ta, YU Tien-Wei US Patent 11,430,700, 2022 | 2 | 2022 |
| Method of manufacturing a semiconductor device CH Tsai, YM Lin, KF Yu, MH Yeh, SB More, CP Savant, CH Ko, CH Wann US Patent 11,404,322, 2022 | 2 | 2022 |
| Method of manufacturing semiconductor devices and semiconductor devices SB More, CP Savant, YU Tien-Wei, CM Tsai US Patent 11,342,434, 2022 | 2 | 2022 |
| Method of manufacturing semiconductor devices and semiconductor devices SB More, CP Savant US Patent 11,955,485, 2024 | 1 | 2024 |
| Method of manufacturing semiconductor devices and semiconductor devices SB More, CP Savant, YU Tien-Wei, CM Tsai US Patent 11,784,187, 2023 | 1 | 2023 |
| Semiconductor device and method SB More, CP Savant US Patent 11,640,983, 2023 | 1 | 2023 |
| Method of manufacturing an etch stop layer and an inter-layer dielectric on a source/drain region SB More, CP Savant US Patent 11,522,062, 2022 | 1 | 2022 |
| Gate structure and method of forming same SB More, CP Savant, CH Tsai US Patent 11,404,327, 2022 | 1 | 2022 |
| Method of manufacturing semiconductor devices and semiconductor devices CP Savant, CM Tsai, MT Chen, YU Tien-Wei US Patent 11,978,675, 2024 | | 2024 |
| Method of manufacturing semiconductor devices and semiconductor devices SB More, CP Savant, YU Tien-Wei, CM Tsai US Patent App. 18/408,438, 2024 | | 2024 |
| Method of manufacturing a semiconductor device CH Tsai, YM Lin, KF Yu, MH Yeh, SB More, CP Savant, CH Ko, CH Wann US Patent 11,972,982, 2024 | | 2024 |
Tsai Chun HsiungTaiwan Semiconductor Manufacturing CompanyVerified email at ntu.edu.tw
