Follow
Junzhe Kang
Title
Cited by
Cited by
Year
3D‐printed structure boosts the kinetics and intrinsic capacitance of pseudocapacitive graphene aerogels
B Yao, S Chandrasekaran, H Zhang, A Ma, J Kang, L Zhang, X Lu, F Qian, ...
Advanced materials 32 (8), 1906652, 2020
2202020
Printing porous carbon aerogels for low temperature supercapacitors
B Yao, H Peng, H Zhang, J Kang, C Zhu, G Delgado, D Byrne, S Faulkner, ...
Nano Letters 21 (9), 3731-3737, 2021
1212021
Heterogeneous Electronic and Photonic Devices Based on Monolayer Ternary Telluride Core/Shell Structures
K Xu, A Sharma, J Kang, X Hu, Z Hao, W Zhu
Advanced Materials 32 (47), 2002548, 2020
102020
High temperature operation of E-mode and D-mode AlGaN/GaN MIS-HEMTs with recessed gates
H Lee, H Ryu, J Kang, W Zhu
IEEE Journal of the Electron Devices Society 11, 167-173, 2023
52023
Stable High Temperature Operation of p-GaN Gate HEMT With Etch-stop Layer
H Lee, H Ryu, J Kang, W Zhu
IEEE Electron Device Letters, 2024
32024
High Ion/Ioff ratio 4H-SiC MISFETs with stable operation at 500° C using SiO2/SiNx/Al2O3 gate stacks
J Kang, K Xu, H Lee, S Bhattacharya, Z Zhao, Z Wang, ...
Applied Physics Letters 122 (8), 2023
22023
Atomically thin telluride multiheterostructures: toward spatial modulation of bandgaps
Z Hao, K Xu, J Kang, C Chen, W Zhu
Nanoscale 13 (46), 19587-19592, 2021
22021
Reconfigurable transistors based on van der Waals heterostructures
J Kang, S Rakheja, W Zhu
MRS Advances 8 (14), 773-779, 2023
12023
Spatially composition-graded monolayer tungsten selenium telluride
K Xu, Z Hao, H Alsalman, J Kang, C Chen, Z Wang, Z Zhao, T Low, W Zhu
Applied Physics Letters 120 (23), 2022
12022
Impact of Lightly Doped Drain on Hot Carrier Degradation Variability in N-FETs and SRAM Cells
Q Teng, Y Wu, J Kang, K Xu, D Gao
2024 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2024
2024
Control-gate-free reconfigurable transistor based on 2D MoTe2 with asymmetric gating
Z Zhao, J Kang, S Rakheja, W Zhu
Applied Physics Letters 124 (7), 2024
2024
Content-Addressable Memories and Transformable Logic Circuits Based on Ferroelectric Reconfigurable Transistors for In-Memory Computing
Z Zhao, J Kang, A Tunga, H Ryu, A Shukla, S Rakheja, W Zhu
ACS nano, 2024
2024
Low-Thermal-Budget Ferroelectric Field-Effect Transistors Based on CuInP2S6 and InZnO
H Ryu, J Kang, M Park, B Bae, Z Zhao, S Rakheja, K Lee, W Zhu
ACS Applied Materials & Interfaces 15 (46), 53671-53677, 2023
2023
Reconfigurable Logic Transistors Based on 2D Heterostructures
J Kang, S Rakheja, W Zhu
APS March Meeting Abstracts 2023, Q34. 009, 2023
2023
The system can't perform the operation now. Try again later.
Articles 1–14