| Ultra-high-yield growth of vertical single-walled carbon nanotubes: Hidden roles of hydrogen and oxygen G Zhang, D Mann, L Zhang, A Javey, Y Li, E Yenilmez, Q Wang, ... Proceedings of the National Academy of Sciences 102 (45), 16141-16145, 2005 | 548 | 2005 |
| Two-dimensional thermal oxidation of silicon. II. Modeling stress effects in wet oxides DB Kao, JP Mcvittie, WD Nix, KC Saraswat IEEE transactions on electron devices 35 (1), 25-37, 1988 | 446 | 1988 |
| Two-dimensional thermal oxidation of silicon—I. Experiments DB Kao, JP McVittie, WD Nix, KC Saraswat IEEE Transactions on Electron Devices 34 (5), 1008-1017, 1987 | 313 | 1987 |
| Technology and reliability constrained future copper interconnects. I. Resistance modeling P Kapur, JP McVittie, KC Saraswat IEEE Transactions on electron devices 49 (4), 590-597, 2002 | 300 | 2002 |
| A tuned Langmuir probe for measurements in rf glow discharges AP Paranjpe, JP McVittie, SA Self Journal of Applied Physics 67 (11), 6718-6727, 1990 | 241 | 1990 |
| Ge-interface engineering with ozone oxidation for low interface-state density D Kuzum, T Krishnamohan, AJ Pethe, AK Okyay, Y Oshima, Y Sun, ... IEEE Electron Device Letters 29 (4), 328-330, 2008 | 225 | 2008 |
| Notching as an example of charging in uniform high density plasmas T Kinoshita, M Hane, JP McVittie Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996 | 203 | 1996 |
| Thin-oxide damage from gate charging during plasma processing S Fang, JP McVittie IEEE Electron Device Letters 13 (5), 288-290, 1992 | 188 | 1992 |
| Electrical properties of heavily doped polycrystalline silicon-germanium films TJ King, JP McVittie, KC Saraswat, JR Pfiester IEEE Transactions on Electron devices 41 (2), 228-232, 1994 | 185 | 1994 |
| Simulation of profile evolution in silicon reactive ion etching with re‐emission and surface diffusion VK Singh, ESG Shaqfeh, JP McVittie Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1992 | 185 | 1992 |
| Technology and reliability constrained future copper interconnects. II. Performance implications P Kapur, G Chandra, JP McVittie, KC Saraswat IEEE Transactions on Electron Devices 49 (4), 598-604, 2002 | 154 | 2002 |
| How plasma etching damages thin gate oxides CT Gabriel, JP McVittie Solid State Technology 35 (6), 81-88, 1992 | 138 | 1992 |
| Resistive Switching Mechanism in Nonvolatile Memory Devices Z Wang, PB Griffin, J McVittie, S Wong, PC McIntyre, Y Nishi IEEE electron device letters 28 (1), 14-16, 2006 | 121 | 2006 |
| A 3‐dimensional model for low‐pressure chemical‐vapor‐deposition step coverage in trenches and circular vias MM IslamRaja, MA Cappelli, JP McVittie, KC Saraswat Journal of applied physics 70 (11), 7137-7140, 1991 | 121 | 1991 |
| SPEEDIE: A profile simulator for etching and deposition JP McVittie, JC Rey, AJ Bariya, MM IslamRaja, LY Cheng, S Ravi, ... Advanced Techniques for Integrated Circuit Processing 1392, 126-138, 1991 | 114 | 1991 |
| Experimental study of biaxial and uniaxial strain effects on carrier mobility in bulk and ultrathin-body SOI MOSFETs K Uchida, R Zednik, CH Lu, H Jagannathan, J McVittie, PC McIntyre, ... IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 109 | 2004 |
| Monte Carlo low pressure deposition profile simulations JC Rey, LY Cheng, JP McVittie, KC Saraswat Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 9 (3 …, 1991 | 104 | 1991 |
| A model and experiments for thin oxide damage from wafer charging in magnetron plasmas S Fang, JP McVittie IEEE electron device letters 13 (6), 347-349, 1992 | 102 | 1992 |
| Interface-engineered Ge (100) and (111), N-and P-FETs with high mobility D Kuzum, AJ Pethe, T Krishnamohan, Y Oshima, Y Sun, JP McVittie, ... 2007 IEEE International Electron Devices Meeting, 723-726, 2007 | 100 | 2007 |
| A polycrystalline-Si/sub 1-x/Ge/sub x/-gate CMOS technology TJ King, JR Pfiester, JD Shott, JP McVittie, KC Saraswat International Technical Digest on Electron Devices, 253-256, 1990 | 100 | 1990 |
