| Molecular Beam Epitaxy of GroupIII Nitrides on Silicon Substrates: Growth, Properties and Device Applications F Semond, Y Cordier, N Grandjean, F Natali, B Damilano, S Vézian, ... physica status solidi (a) 188 (2), 501-510, 2001 | 207 | 2001 |
| Rare-earth mononitrides F Natali, BJ Ruck, NOV Plank, HJ Trodahl, S Granville, C Meyer, ... Progress in Materials Science 58 (8), 1316-1360, 2013 | 171 | 2013 |
| Determination of the refractive indices of AlN, GaN, and grown on (111)Si substrates N Antoine-Vincent, F Natali, M Mihailovic, A Vasson, J Leymarie, ... Journal of applied physics 93 (9), 5222-5226, 2003 | 145 | 2003 |
| From spiral growth to kinetic roughening in molecular-beam epitaxy of GaN (0001) S Vézian, F Natali, F Semond, J Massies Physical Review B 69 (12), 125329, 2004 | 119 | 2004 |
| Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks JM Bethoux, P Vennéguès, F Natali, E Feltin, O Tottereau, G Nataf, ... Journal of applied physics 94 (10), 6499-6507, 2003 | 115 | 2003 |
| Observation of Rabi splitting in a bulk GaN microcavity grown on silicon N Antoine-Vincent, F Natali, D Byrne, A Vasson, P Disseix, J Leymarie, ... Physical Review B 68 (15), 153313, 2003 | 106 | 2003 |
| Strong light-matter coupling at room temperature in simple geometry GaN microcavities grown on silicon F Semond, IR Sellers, F Natali, D Byrne, M Leroux, J Massies, N Ollier, ... Applied Physics Letters 87 (2), 2005 | 94 | 2005 |
| Phonon deformation potentials in hexagonal GaN F Demangeot, J Frandon, P Baules, F Natali, F Semond, J Massies Physical Review B 69 (15), 155215, 2004 | 83 | 2004 |
| AlGaN/GaN HEMTs on Si (111) with 6.6 W/mm output power density R Behtash, H Tobler, M Neuburger, A Schurr, H Leier, Y Cordier, ... Electronics Letters 39 (7), 626-627, 2003 | 83 | 2003 |
| Temperature dependence of electron spin relaxation in bulk GaN JH Buß, J Rudolph, F Natali, F Semond, D Hägele Physical Review B 81 (15), 155216, 2010 | 74 | 2010 |
| Epitaxial growth of GdN on silicon substrate using an AlN buffer layer F Natali, NOV Plank, J Galipaud, BJ Ruck, HJ Trodahl, F Semond, ... Journal of crystal growth 312 (24), 3583-3587, 2010 | 71 | 2010 |
| High-Al-content crack-free AlGaN/GaN Bragg mirrors grown by molecular-beam epitaxy F Natali, D Byrne, A Dussaigne, N Grandjean, J Massies, B Damilano Applied physics letters 82 (4), 499-501, 2003 | 67 | 2003 |
| High microwave and noise performance of 0.17-μm AlGaN-GaN HEMTs on high-resistivity silicon substrates A Minko, V Hoel, S Lepilliet, G Dambrine, JC De Jaeger, Y Cordier, ... IEEE Electron Device Letters 25 (4), 167-169, 2004 | 63 | 2004 |
| Enhanced Curie temperature in N-deficient GdN NOV Plank, F Natali, J Galipaud, JH Richter, M Simpson, HJ Trodahl, ... Applied Physics Letters 98 (11), 2011 | 58 | 2011 |
| Role of magnetic polarons in ferromagnetic GdN F Natali, BJ Ruck, HJ Trodahl, S Vezian, B Damilano, Y Cordier, ... Physical Review B 87 (3), 035202, 2013 | 56 | 2013 |
| Inhomogeneous broadening of quantum wells F Natali, D Byrne, M Leroux, B Damilano, F Semond, A Le Louarn, ... Physical Review B 71 (7), 075311, 2005 | 55 | 2005 |
| Electronic structure of EuN: Growth, spectroscopy, and theory JH Richter, BJ Ruck, M Simpson, F Natali, NOV Plank, M Azeem, ... Physical Review B 84 (23), 235120, 2011 | 53 | 2011 |
| Spin/orbit moment imbalance in the near-zero moment ferromagnetic semiconductor SmN EM Anton, BJ Ruck, C Meyer, F Natali, H Warring, F Wilhelm, A Rogalev, ... Physical Review B 87 (13), 134414, 2013 | 52 | 2013 |
| Blue-green and white color tuning of monolithic light emitting diodes B Damilano, P Demolon, J Brault, T Huault, F Natali, J Massies Journal of Applied Physics 108 (7), 2010 | 49 | 2010 |
| Blue-light emission from GaN∕ Al0. 5Ga0. 5N quantum dots T Huault, J Brault, F Natali, B Damilano, D Lefebvre, L Nguyen, M Leroux, ... Applied Physics Letters 92 (5), 2008 | 49 | 2008 |
Ben RuckAssociate Professor, Victoria University of Wellington在 vuw.ac.nz 的电子邮件经过验证
