franck natali
franck natali
Senior Lecturer of Physics, The MacDiarmid Institute for Advanced Materials and Nanotechnology
在 的电子邮件经过验证
Molecular Beam Epitaxy of GroupIII Nitrides on Silicon Substrates: Growth, Properties and Device Applications
F Semond, Y Cordier, N Grandjean, F Natali, B Damilano, S Vézian, ...
physica status solidi (a) 188 (2), 501-510, 2001
Determination of the refractive indices of AlN, GaN, and grown on (111)Si substrates
N Antoine-Vincent, F Natali, M Mihailovic, A Vasson, J Leymarie, ...
Journal of applied physics 93 (9), 5222-5226, 2003
Rare-earth mononitrides
F Natali, BJ Ruck, NOV Plank, HJ Trodahl, S Granville, C Meyer, ...
Progress in Materials Science 58 (8), 1316-1360, 2013
From spiral growth to kinetic roughening in molecular-beam epitaxy of GaN (0001)
S Vézian, F Natali, F Semond, J Massies
Physical Review B 69 (12), 125329, 2004
Observation of Rabi splitting in a bulk GaN microcavity grown on silicon
N Antoine-Vincent, F Natali, D Byrne, A Vasson, P Disseix, J Leymarie, ...
Physical Review B 68 (15), 153313, 2003
Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks
JM Bethoux, P Vennéguès, F Natali, E Feltin, O Tottereau, G Nataf, ...
Journal of applied physics 94 (10), 6499-6507, 2003
Strong light-matter coupling at room temperature in simple geometry GaN microcavities grown on silicon
F Semond, IR Sellers, F Natali, D Byrne, M Leroux, J Massies, N Ollier, ...
Applied Physics Letters 87 (2), 021102, 2005
AlGaN/GaN HEMTs on Si (111) with 6.6 W/mm output power density
R Behtash, H Tobler, M Neuburger, A Schurr, H Leier, Y Cordier, ...
Electronics Letters 39 (7), 626-627, 2003
Phonon deformation potentials in hexagonal GaN
F Demangeot, J Frandon, P Baules, F Natali, F Semond, J Massies
Physical Review B 69 (15), 155215, 2004
Temperature dependence of electron spin relaxation in bulk GaN
JH Buß, J Rudolph, F Natali, F Semond, D Hägele
Physical Review B 81 (15), 155216, 2010
High-Al-content crack-free AlGaN/GaN Bragg mirrors grown by molecular-beam epitaxy
F Natali, D Byrne, A Dussaigne, N Grandjean, J Massies, B Damilano
Applied physics letters 82 (4), 499-501, 2003
Optical Characterization of AlxGa1—xN Alloys (x < 0.7) Grown on Sapphire or Silicon
M Leroux, S Dalmasso, F Natali, S Helin, C Touzi, S Laügt, M Passerel, ...
physica status solidi (b) 234 (3), 887-891, 2002
Epitaxial growth of GdN on silicon substrate using an AlN buffer layer
F Natali, NOV Plank, J Galipaud, BJ Ruck, HJ Trodahl, F Semond, ...
Journal of crystal growth 312 (24), 3583-3587, 2010
High microwave and noise performance of 0.17-μm AlGaN-GaN HEMTs on high-resistivity silicon substrates
A Minko, V Hoel, S Lepilliet, G Dambrine, JC De Jaeger, Y Cordier, ...
IEEE Electron Device Letters 25 (4), 167-169, 2004
Inhomogeneous broadening of quantum wells
F Natali, D Byrne, M Leroux, B Damilano, F Semond, A Le Louarn, ...
Physical Review B 71 (7), 075311, 2005
Blue-green and white color tuning of monolithic light emitting diodes
B Damilano, P Demolon, J Brault, T Huault, F Natali, J Massies
Journal of Applied Physics 108 (7), 073115, 2010
Role of magnetic polarons in ferromagnetic GdN
F Natali, BJ Ruck, HJ Trodahl, S Vezian, B Damilano, Y Cordier, ...
Physical Review B 87 (3), 035202, 2013
Blue-light emission from quantum dots
T Huault, J Brault, F Natali, B Damilano, D Lefebvre, L Nguyen, M Leroux, ...
Applied Physics Letters 92 (5), 051911, 2008
Anisotropic electron spin relaxation in bulk GaN
JH Buss, J Rudolph, F Natali, F Semond, D Hägele
Applied Physics Letters 95 (19), 192107, 2009
MBE growth of ALGaN/GaN HEMTS on resistive Si (1 1 1) substrate with RF small signal and power performances
Y Cordier, F Semond, P Lorenzini, N Grandjean, F Natali, B Damilano, ...
Journal of crystal growth 251 (1-4), 811-815, 2003
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