Tao Wang
Tao Wang
Professor, Dept. of EEE, University of Sheffield, UK
Verified email at - Homepage
Cited by
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The 2020 UV emitter roadmap
H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ...
Journal of Physics D: Applied Physics 53 (50), 503001, 2020
Influence of the quantum-well thickness on the radiative recombination of InGaN/GaN quantum well structures
J Bai, T Wang, S Sakai
Journal of Applied physics 88 (8), 4729-4733, 2000
A new method of reducing dislocation density in GaN layer grown on sapphire substrate by MOVPE
S Sakai, T Wang, Y Morishima, N Naoi
J. Cryst. Growth 221, 334, 2000
Role of dislocation in InGaN phase separation
T Sugahara, M Hao, T Wang, D Nakagawa, Y Naoi, K Nishino, S Sakai
Japanese journal of applied physics 37 (10B), L1195, 1998
1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348 nm grown on sapphire substrate
T Wang, YH Liu, YB Lee, JP Ao, J Bai, S Sakai
Applied Physics Letters 81 (14), 2508-2510, 2002
Photoluminescence investigation of InGaN/GaN single quantum well and multiple quantum wells
T Wang, D Nakagawa, J Wang, T Sugahara, S Sakai
Applied physics letters 73 (24), 3571-3573, 1998
Investigation of the emission mechanism in InGaN/GaN-based light-emitting diodes
T Wang, J Bai, S Sakai, JK Ho
Applied Physics Letters 78 (18), 2617-2619, 2001
Luminescence of nanometer‐sized amorphous silicon nitride solids
C Mo, L Zhang, C Xie, T Wang
Journal of applied physics 73 (10), 5185-5188, 1993
Valence band offset of heterojunctions measured by x-ray photoelectron spectroscopy
PDC King, TD Veal, PH Jefferson, CF McConville, T Wang, PJ Parbrook, ...
Applied physics letters 90 (13), 132105, 2007
Topical Review: Development of overgrown semi-polar GaN for high efficiency green/yellow emission
T Wang
Semiconductor Science and Technology 31 (9), 093003, 2016
GaN structures having low dislocation density and methods of manufacture
T Wang
US Patent 6,815,241, 2004
Influence of strain relaxation on the optical properties of InGaN/GaN multiple quantum well nanorods
Q Wang, J Bai, YP Gong, T Wang
Journal of Physics D: Applied Physics 44 (39), 395102, 2011
A study of dislocations in AlN and GaN films grown on sapphire substrates
J Bai, T Wang, PJ Parbrook, KB Lee, AG Cullis
Journal of crystal growth 282 (3-4), 290-296, 2005
Electron-beam-induced segregation in InGaN/GaN multiple-quantum wells
JP O’Neill, IM Ross, AG Cullis, T Wang, PJ Parbrook
Applied Physics Letters 83 (10), 1965-1967, 2003
High resolution cathodoluminescence hyperspectral imaging of surface features in InGaN/GaN multiple quantum well structures
J Bruckbauer, PR Edwards, T Wang, RW Martin
Applied Physics Letters 98 (14), 141908, 2011
Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes
T Wang, YH Liu, YB Lee, Y Izumi, JP Ao, J Bai, HD Li, S Sakai
Journal of crystal growth 235 (1-4), 177-182, 2002
Effect of silicon doping on the optical and transport properties of InGaN/GaN multiple-quantum-well structures
T Wang, H Saeki, J Bai, T Shirahama, M Lachab, S Sakai, P Eliseev
Applied Physics Letters 76 (13), 1737-1739, 2000
Characterization of InGaN-based nanorod light emitting diodes with different indium compositions
J Bai, Q Wang, T Wang
Journal of Applied Physics 111 (11), 113103, 2012
Influence of buffer layer and growth temperature on the properties of an undoped GaN layer grown on sapphire substrate by metalorganic chemical vapor deposition
T Wang, T Shirahama, HB Sun, HX Wang, J Bai, S Sakai, H Misawa
Applied Physics Letters 76 (16), 2220-2222, 2000
Electron mobility exceeding in an AlGaN–GaN heterostructure grown on a sapphire substrate
T Wang, Y Ohno, M Lachab, D Nakagawa, T Shirahama, S Sakai, H Ohno
Applied physics letters 74 (23), 3531-3533, 1999
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