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Nattapol Damrongplasit
Nattapol Damrongplasit
Verified email at eecs.berkeley.edu
Title
Cited by
Cited by
Year
Study of random dopant fluctuation effects in germanium-source tunnel FETs
N Damrongplasit, C Shin, SH Kim, RA Vega, TJK Liu
IEEE transactions on electron devices 58 (10), 3541-3548, 2011
1452011
Study of random dopant fluctuation induced variability in the raised-Ge-source TFET
N Damrongplasit, SH Kim, TJK Liu
IEEE electron device letters 34 (2), 184-186, 2013
1252013
Variation study of the planar ground-plane bulk MOSFET, SOI FinFET, and trigate bulk MOSFET designs
X Sun, V Moroz, N Damrongplasit, C Shin, TJK Liu
IEEE transactions on electron devices 58 (10), 3294-3299, 2011
642011
4H-SiC N-channel JFET for operation in high-temperature environments
WC Lien, N Damrongplasit, JH Paredes, DG Senesky, TJK Liu, AP Pisano
IEEE Journal of the Electron Devices Society 2 (6), 164-167, 2014
362014
Performance and yield benefits of quasi-planar bulk CMOS technology for 6-T SRAM at the 22-nm node
C Shin, N Damrongplasit, X Sun, Y Tsukamoto, B Nikolic, TJK Liu
IEEE transactions on electron devices 58 (7), 1846-1854, 2011
262011
MOSFET performance and scalability enhancement by insertion of oxygen layers
N Xu, N Damrongplasit, H Takeuchi, RJ Stephenson, NW Cody, A Yiptong, ...
2012 International Electron Devices Meeting, 6.4. 1-6.4. 4, 2012
242012
Extension of planar bulk n-channel MOSFET scaling with oxygen insertion technology
N Xu, H Takeuchi, N Damrongplasit, RJ Stephenson, X Huang, NW Cody, ...
IEEE Transactions on Electron Devices 61 (9), 3345-3349, 2014
222014
Impact of gate line-edge roughness (LER) versus random dopant fluctuations (RDF) on germanium-source tunnel FET performance
N Damrongplasit, SH Kim, C Shin, TJK Liu
IEEE transactions on nanotechnology 12 (6), 1061-1067, 2013
212013
Comparative study of uniform versus supersteep retrograde MOSFET channel doping and implications for 6-T SRAM yield
N Damrongplasit, N Xu, H Takeuchi, RJ Stephenson, NW Cody, A Yiptong, ...
IEEE transactions on electron devices 60 (5), 1790-1793, 2013
182013
Variation-aware comparative study of 10-nm GAA versus FinFET 6-T SRAM performance and yield
P Zheng, YB Liao, N Damrongplasit, MH Chiang, TJK Liu
IEEE Transactions on Electron Devices 61 (12), 3949-3954, 2014
172014
Design of gate-all-around silicon MOSFETs for 6-T SRAM area efficiency and yield
YB Liao, MH Chiang, N Damrongplasit, WC Hsu, TJK Liu
IEEE Transactions on Electron Devices 61 (7), 2371-2377, 2014
152014
Simultaneous carrier transport enhancement and variability reduction in Si MOSFETs by insertion of partial monolayers of oxygen
RJ Mears, N Xu, N Damrongplasit, H Takeuchi, RJ Stephenson, NW Cody, ...
2012 IEEE Silicon Nanoelectronics Workshop (SNW), 1-2, 2012
152012
Threshold voltage and DIBL variability modeling based on forward and reverse measurements for SRAM and analog MOSFETs
N Damrongplasit, L Zamudio, TJK Liu, S Balasubramanian
IEEE Transactions on Electron Devices 62 (4), 1119-1126, 2015
112015
6-T SRAM cell design with gate-all-around silicon nanowire MOSFETs
YB Liao, MH Chiang, N Damrongplasit, TJK Liu, WC Hsu
2013 International Symposium on VLSI Technology, Systems and Application …, 2013
92013
Study of variability in advanced transistor technologies
N Damrongplasit
Electrical Engineering and Computer Sciences, 2014
62014
Threshold voltage and DIBL variability modeling for SRAM and analog MOSFETs
N Damrongplasit, L Zamudio, S Balasubramanian
2012 Symposium on VLSI Technology (VLSIT), 187-188, 2012
62012
Effectiveness of Quasi-Confinement Technology for Improving P-Channel Si and Ge MOSFET Performance
N Xu, M Hytha, H Takeuchi, X Huang, RJ Stephenson, N Damrongplasit, ...
IEEE, 2012
22012
Comparison of 10 nm GAA vs. FinFET 6-T SRAM performance and yield
P Zheng, YB Liao, N Damrongplasit, MH Chiang, WC Hsu, TJK Liu
2014 Silicon Nanoelectronics Workshop (SNW), 1-2, 2014
12014
2014 Index IEEE Journal of the Electron Devices Society Vol. 2
DB Abdi, V Aimez, F Al-Dirini, EA Alam, J Ao, O Arenas, R Ares, M Arp, ...
IEEE Journal of the Electron Devices Society 2 (6), 191, 2014
2014
Oxygen-inserted SegFET: A candidate for 10-nm node system-on-chip applications
N Xu, H Takeuchi, N Damrongplasit, RJ Stephenson, M Hytha, N Cody, ...
2014 Silicon Nanoelectronics Workshop (SNW), 1-2, 2014
2014
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