John Jarman
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Room-temperature optically detected magnetic resonance of single defects in hexagonal boron nitride
HL Stern, Q Gu, J Jarman, S Eizagirre Barker, N Mendelson, D Chugh, ...
Nature communications 13 (1), 618, 2022
Wafer-scale fabrication of non-polar mesoporous GaN distributed Bragg reflectors via electrochemical porosification
T Zhu, Y Liu, T Ding, WY Fu, J Jarman, CX Ren, RV Kumar, RA Oliver
Scientific reports 7 (1), 45344, 2017
α-Ga2O3 grown by low temperature atomic layer deposition on sapphire
JW Roberts, JC Jarman, DN Johnstone, PA Midgley, PR Chalker, ...
Journal of Crystal Growth 487, 23-27, 2018
Atomic layer deposited α-Ga2O3 solar-blind photodetectors
J Moloney, O Tesh, M Singh, JW Roberts, JC Jarman, LC Lee, TN Huq, ...
Journal of Physics D: Applied Physics 52 (47), 475101, 2019
Polarisation-controlled single photon emission at high temperatures from InGaN quantum dots
T Wang, TJ Puchtler, T Zhu, JC Jarman, LP Nuttall, RA Oliver, RA Taylor
Nanoscale 9 (27), 9421-9427, 2017
Ideal refocusing of an optically active spin qubit under strong hyperfine interactions
L Zaporski, N Shofer, JH Bodey, S Manna, G Gillard, MH Appel, ...
Nature Nanotechnology 18 (3), 257-263, 2023
Suitability of analytical methods to measure solubility for the purpose of nanoregulation
R Tantra, H Bouwmeester, E Bolea, C Rey-Castro, CA David, JM Dogné, ...
Nanotoxicology 10 (2), 173-184, 2016
Improvement of single photon emission from InGaN QDs embedded in porous micropillars
HP Springbett, K Gao, J Jarman, T Zhu, M Holmes, Y Arakawa, RA Oliver
Applied Physics Letters 113 (10), 2018
Deterministic optical polarisation in nitride quantum dots at thermoelectrically cooled temperatures
T Wang, TJ Puchtler, SK Patra, T Zhu, JC Jarman, RA Oliver, S Schulz, ...
Scientific Reports 7 (1), 12067, 2017
Highly polarized electrically driven single-photon emission from a non-polar InGaN quantum dot
CC Kocher, TJ Puchtler, JC Jarman, T Zhu, T Wang, L Nuttall, RA Oliver, ...
Applied Physics Letters 111 (25), 2017
High‐temperature performance of non‐polar (11–20) InGaN quantum dots grown by a quasi‐two‐temperature method
T Wang, TJ Puchtler, T Zhu, JC Jarman, RA Oliver, RA Taylor
physica status solidi (b) 254 (8), 1600724, 2017
Light-output enhancement of InGaN light emitting diodes regrown on nanoporous distributed Bragg reflector substrates
JC Jarman, T Zhu, PH Griffin, RA Oliver
Japanese Journal of Applied Physics 58 (SC), SCCC14, 2019
Study of Ti contacts to corundum α-Ga2O3
F Massabuau, D Nicol, F Adams, J Jarman, J Roberts, A Kovacs, ...
Journal of Physics D: Applied Physics 54 (38), 384001, 2021
Pure single-photon emission from an InGaN/GaN quantum dot
MJ Holmes, T Zhu, FCP Massabuau, J Jarman, RA Oliver, Y Arakawa
APL Materials 9 (6), 2021
Temperature-dependent fine structure splitting in InGaN quantum dots
T Wang, TJ Puchtler, T Zhu, JC Jarman, CC Kocher, RA Oliver, RA Taylor
Applied Physics Letters 111 (5), 2017
Nanomaterial syntheses
R Tantra, KN Robinson, JC Jarman, T Sainsbury
Nanomaterial Characterization: Introduction, An, 25-48, 2016
Progress in atomic layer deposited [alpha]-Ga2O3 materials and solar-blind detectors
FCP Massabuau, JW Roberts, D Nicol, PR Edwards, M McLelland, ...
Oxide-based Materials and Devices XII 11687, 23-30, 2021
On-chip thermal insulation using porous GaN
BF Spiridon, PH Griffin, JC Jarman, Y Liu, T Zhu, A De Luca, RA Oliver, ...
Proceedings 2 (1), 776, 2018
Role of standard documents in advancing the standardization of microfluidics connectors
R Tantra, H van Heeren, J Jarman
Journal of Micro/Nanolithography, MEMS, and MOEMS 15 (2), 020501-020501, 2016
μTAS (micro total analysis systems) for the high-throughput measurement of nanomaterial solubility
R Tantra, J Jarman
Journal of Physics: Conference Series 429 (1), 012011, 2013
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Articles 1–20