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Dominic Andrew Duffy
Dominic Andrew Duffy
Photonics Engineer
Verified email at glasgow.ac.uk
Title
Cited by
Cited by
Year
Metalorganic vapor phase epitaxy growth and characterization of quaternary (Ga, In)(As, Bi) on GaAs substrates
T Hepp, O Maßmeyer, DA Duffy, SJ Sweeney, K Volz
Journal of Applied Physics 126 (8), 2019
72019
Performance characteristics of low threshold current 1.25-μm type-II GaInAs/GaAsSb W-lasers for optical communications
DA Duffy, IP Marko, C Fuchs, TD Eales, J Lehr, W Stolz, SJ Sweeney
Journal of Physics D: Applied Physics 54 (36), 2021
52021
Thermal performance of GaInSb quantum well lasers for silicon photonics applications
CR Fitch, GW Read, IP Marko, DA Duffy, L Cerutti, JB Rodriguez, ...
Applied Physics Letters 118 (10), 2021
52021
A comparative study of epitaxial InGaAsBi/InP structures using Rutherford backscattering spectrometry, X-ray diffraction and photoluminescence techniques
MK Sharpe, IP Marko, DA Duffy, J England, E Schneider, M Kesaria, ...
Journal of Applied Physics 126 (12), 2019
42019
Optical wireless power transfer for terrestrial and space-based applications (Conference Presentation)
IP Marko, DA Duffy, R Misra, K Dattani, SJ Sweeney
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices XII …, 2023
12023
Refractive index dispersion of BGa (As) P alloys in the near-infrared for III-V laser integration on silicon
CR Fitch, DA Duffy, P Ludewig, W Stolz, SJ Sweeney
Journal of Applied Physics 131 (13), 2022
12022
Challenges for room temperature operation of electrically pumped GeSn lasers
AR Ellis, DA Duffy, IP Marko, S Acharya, W Du, SQ Yu, SJ Sweeney
Scientific Reports 14 (1), 10318, 2024
2024
Design and optimisation of MBE-grown GaAs-based" W"-lasers for O-band applications
DA Duffy, IP Marko, M Bentley, AR Marshall, S Rihani, G Berry, ...
Novel In-Plane Semiconductor Lasers XXIII, PC1290501, 2024
2024
Novel III-V materials and heterostructures for thermally stable near-IR lasers
DA Duffy, IP Marko, SJ Sweeney
Quantum Sensing and Nano Electronics and Photonics XIX, PC124300G, 2023
2023
Development of novel semiconductor materials and type-II heterostructures for infrared applications
DA Duffy
University of Surrey, 2023
2023
Reduced Temperature-Dependence of Optical Gain in Type-II GaAs-based “W”-Laser Structures
DA Duffy, IP Marko, C Fuchs, T Hepp, J Lehr, K Volz, W Stolz, ...
2022 28th International Semiconductor Laser Conference (ISLC), 1-2, 2022
2022
Injection-and Temperature-Dependence of Type-II 1.2-1.3 μm (GaIn) As/Ga (AsSb)" W"-Lasers
DA Duffy, IP Marko, C Fuchs, TD Eales, J Lehr, W Stolz, SJ Sweeney
2021 27th International Semiconductor Laser Conference (ISLC), 1-2, 2021
2021
Carrier recombination and temperature-dependence of GaInSb quantum well lasers for silicon photonics applications
CR Fitch, GW Read, IP Marko, DA Duffy, L Cerutti, JB Rodriguez, ...
The European Conference on Lasers and Electro-Optics, cb_6_4, 2021
2021
Erratum:“Thermal performance of GaInSb quantum well lasers for silicon photonics applications”[Appl. Phys. Lett. 118, 101105 (2021)]
CR Fitch, GW Read, IP Marko, DA Duffy, L Cerutti, JB Rodriguez, ...
Applied Physics Letters 118 (18), 2021
2021
Physical properties of low threshold current 1.25-μm type-II GaInAs/GaAsSb" W"-lasers
DA Duffy, IP Marko, TD Eales, C Fuchs, J Lehr, W Stolz, SJ Sweeney
Novel In-Plane Semiconductor Lasers XX 11705, 117050G, 2021
2021
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