Controlled mechanical buckling for origami‐inspired construction of 3D microstructures in advanced materials Z Yan, F Zhang, J Wang, F Liu, X Guo, K Nan, Q Lin, M Gao, D Xiao, Y Shi, ... Advanced functional materials 26 (16), 2629-2639, 2016 | 287 | 2016 |
Mechanical assembly of complex, 3D mesostructures from releasable multilayers of advanced materials Z Yan, F Zhang, F Liu, M Han, D Ou, Y Liu, Q Lin, X Guo, H Fu, Z Xie, ... Science advances 2 (9), e1601014, 2016 | 246 | 2016 |
Three-dimensional mesostructures as high-temperature growth templates, electronic cellular scaffolds, and self-propelled microrobots Z Yan, M Han, Y Shi, A Badea, Y Yang, A Kulkarni, E Hanson, ME Kandel, ... Proceedings of the National Academy of Sciences 114 (45), E9455-E9464, 2017 | 153 | 2017 |
Neuromorphic sensorimotor loop embodied by monolithically integrated, low-voltage, soft e-skin W Wang, Y Jiang, D Zhong, Z Zhang, S Choudhury, JC Lai, H Gong, S Niu, ... Science 380 (6646), 735-742, 2023 | 134 | 2023 |
Guided formation of 3D helical mesostructures by mechanical buckling: Analytical modeling and experimental validation Y Liu, Z Yan, Q Lin, X Guo, M Han, K Nan, KC Hwang, Y Huang, Y Zhang, ... Advanced functional materials 26 (17), 2909-2918, 2016 | 87 | 2016 |
Deterministic integration of biological and soft materials onto 3D microscale cellular frameworks JM McCracken, S Xu, A Badea, KI Jang, Z Yan, DJ Wetzel, K Nan, Q Lin, ... Advanced biosystems 1 (9), 1700068, 2017 | 28 | 2017 |
Sub-0.5 nm interfacial dielectric enables superior electrostatics: 65 mV/dec top-gated carbon nanotube FETs at 15 nm gate length G Pitner, Z Zhang, Q Lin, SK Su, C Gilardi, C Kuo, H Kashyap, T Weiss, ... 2020 IEEE International Electron Devices Meeting (IEDM), 3.5. 1-3.5. 4, 2020 | 16 | 2020 |
Bandgap extraction at 10 K to enable leakage control in carbon nanotube MOSFETs Q Lin, G Pitner, C Gilardi, SK Su, Z Zhang, E Chen, P Bandaru, A Kummel, ... IEEE Electron Device Letters 43 (3), 490-493, 2022 | 12 | 2022 |
Measurement of Ferroelectric Properties of Nanometer Scaled Individual Metal/Hf0.5Zr0.5O2/Metal Capacitors F Huang, M Passlack, Z Yu, Q Lin, A Babadi, VDH Hou, PC McIntyre, ... IEEE Electron Device Letters 43 (2), 212-215, 2021 | 8 | 2021 |
Extended scale length theory targeting low-dimensional FETs for carbon nanotube FET digital logic design-technology co-optimization C Gilardi, B Chehab, G Sisto, P Schuddinck, Z Ahmed, O Zografos, Q Lin, ... 2021 IEEE International Electron Devices Meeting (IEDM), 27.3. 1-27.3. 4, 2021 | 6 | 2021 |
Building high performance transistors on carbon nanotube channel G Pitner, N Safron, TA Chao, S Li, SK Su, G Zeevi, Q Lin, HY Chiu, ... 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 4 | 2023 |
Application-driven synthesis and characterization of hexagonal boron nitride deposited on metals and carbon nanotubes V Chen, YC Shin, E Mikheev, Q Lin, J Martis, Z Zhang, S Chatterjee, ... 2D Materials 8 (4), 045024, 2021 | 4 | 2021 |
Band-to-Band Tunneling Leakage Current Characterization and Projection in Carbon Nanotube Transistors Q Lin, C Gilardi, SK Su, Z Zhang, E Chen, P Bandaru, A Kummel, I Radu, ... ACS nano 17 (21), 21083-21092, 2023 | 1 | 2023 |
Hybrid 2T nMOS/pMOS Gain Cell Memory with Indium-tin-oxide and Carbon Nanotube MOSFETs for Counteracting Capacitive Coupling S Liu, S Li, Q Lin, K Jana, S Mitra, HSP Wong, K Toprasertpong IEEE Electron Device Letters, 2023 | | 2023 |
N3XT 3D Technology Foundations and Their Lab-to-Fab: Omni 3D Logic, Logic+ Memory Ultra-Dense 3D, 3D Thermal Scaffolding T Srimani, A Bechdolt, S Choi, C Gilardi, A Kasperovich, S Li, Q Lin, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | | 2023 |
High-performance and low parasitic capacitance CNT MOSFET: 1.2 mA/μm at VDS of 0.75 V by self-aligned doping in sub-20 nm spacer S Li, TA Chao, C Gilardi, N Safron, SK Su, G Zeevi, AD Bechdolt, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | | 2023 |
Barrier Booster for Remote Extension Doping and its DTCO for 1D & 2D FETs C Gilardi, G Zeevi, S Choi, SK Su, TYT Hung, S Li, N Safron, Q Lin, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | | 2023 |
Electrically driven light emission from single quantum dots using pulsed MOS capacitors V Wang, Q Lin, A Javey Applied Physics Letters 123 (13), 2023 | | 2023 |
Switching limits of top-gated carbon nanotube field-effect transistors A Sanchez-Soares, C Gilardi, Q Lin, T Kelly, SK Su, G Fagas, JC Greer, ... Solid-State Electronics 202, 108624, 2023 | | 2023 |
Highly confined plasmons in individual single-walled carbon nanotube nanoantennas SJ Yu, JA Roberts, Q Lin, S Bohaichuk, Y Luo, YT Choi, PH Ho, K Lee, ... CLEO: QELS_Fundamental Science, FF1F. 2, 2020 | | 2020 |