| Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed P Noé, A Verdy, F d’Acapito, JB Dory, M Bernard, G Navarro, JB Jager, ... Science advances 6 (9), eaay2830, 2020 | 101 | 2020 |
| Energy-resolved hot-carrier relaxation dynamics in monocrystalline plasmonic nanoantennas R Mejard, A Verdy, M Petit, A Bouhelier, B Cluzel, O Demichel ACS Photonics 3 (8), 1482-1488, 2016 | 41 | 2016 |
| Improved electrical performance thanks to Sb and N doping in Se-rich GeSe-based OTS selector devices A Verdy, G Navarro, V Sousa, P Noe, M Bernard, F Fillot, G Bourgeois, ... 2017 IEEE International Memory Workshop (IMW), 1-4, 2017 | 39 | 2017 |
| Innovative PCM+ OTS device with high sub-threshold non-linearity for non-switching reading operations and higher endurance performance G Navarro, A Verdy, N Castellani, G Bourgeois, V Sousa, G Molas, ... 2017 Symposium on VLSI Technology, T94-T95, 2017 | 37 | 2017 |
| Ge–Sb–S–Se–Te amorphous chalcogenide thin films towards on-chip nonlinear photonic devices JB Dory, C Castro-Chavarria, A Verdy, JB Jager, M Bernard, C Sabbione, ... Scientific reports 10 (1), 11894, 2020 | 32 | 2020 |
| Advanced engineering of single-crystal gold nanoantennas R Méjard, A Verdy, O Demichel, M Petit, L Markey, F Herbst, ... Optical Materials Express 7 (4), 1157-1168, 2017 | 31 | 2017 |
| Phase-change memory: Performance, roles and challenges G Navarro, G Bourgeois, J Kluge, AL Serra, A Verdy, J Garrione, ... 2018 IEEE International Memory Workshop (IMW), 1-4, 2018 | 27 | 2018 |
| In-depth investigation of programming and reading operations in RRAM cells integrated with Ovonic Threshold Switching (OTS) selectors M Alayan, E Vianello, G Navarro, C Carabasse, S La Barbera, A Verdy, ... 2017 IEEE International Electron Devices Meeting (IEDM), 2.3. 1-2.3. 4, 2017 | 26 | 2017 |
| Carbon electrode for Ge-Se-Sb based OTS selector for ultra low leakage current and outstanding endurance A Verdy, G Navarro, M Bernard, S Chevalliez, N Castellani, E Nolot, ... 2018 IEEE International Reliability Physics Symposium (IRPS), 6D. 4-1-6D. 4-6, 2018 | 25 | 2018 |
| Optimized reading window for crossbar arrays thanks to Ge-Se-Sb-N-based OTS selectors A Verdy, M Bernard, J Garrione, G Bourgeois, MC Cyrille, E Nolot, ... 2018 IEEE International Electron Devices Meeting (IEDM), 37.4. 1-37.4. 4, 2018 | 24 | 2018 |
| High temperature stability and performance analysis of N-doped Ge-Se-Sb based OTS selector devices A Verdy, G Navarro, M Bernard, P Noe, G Bourgeois, J Garrione, ... 2018 IEEE International Memory Workshop (IMW), 1-4, 2018 | 13 | 2018 |
| Effect of Nitrogen on the Amorphous Structure and Subthreshold Electrical Conduction of GeSeSb‐Based Ovonic Threshold Switching Thin Films A Verdy, F d'Acapito, JB Dory, G Navarro, M Bernard, P Noé physica status solidi (RRL)–Rapid Research Letters 14 (5), 1900548, 2020 | 12 | 2020 |
| OTS selector devices: Material engineering for switching performance MC Cyrille, A Verdy, G Navarro, G Bourgeois, J Garrione, M Bernard, ... 2018 International Conference on IC Design & Technology (ICICDT), 113-116, 2018 | 11 | 2018 |
| Tunable Performances in OTS Selectors Thanks to Ge3Se7-As2Te3 A Verdy, M Bernard, N Castellani, P Noe, J Garrione, G Bourgeois, ... 2019 IEEE 11th International Memory Workshop (IMW), 1-4, 2019 | 10 | 2019 |
| Reliability and variability of 1S1R OxRAM-OTS for high density crossbar integration DA Robayo, G Sassine, JM Lopez, L Grenouillet, A Verdy, G Navarro, ... 2019 IEEE International Electron Devices Meeting (IEDM), 35.3. 1-35.3. 4, 2019 | 7 | 2019 |
| Integration of OTS based back-end selector with HfO2 OxRAM for crossbar arrays DA Robayo, G Sassine, L Grenouillet, C Carabasse, T Martin, ... 2019 IEEE 11th International Memory Workshop (IMW), 1-4, 2019 | 7 | 2019 |
| High temperature stability embedded ReRAM for 2x nm node and beyond G Molas, G Piccolboni, A Bricalli, A Verdy, I Naot, Y Cohen, A Regev, ... 2022 IEEE International Memory Workshop (IMW), 1-4, 2022 | 5 | 2022 |
| 2017 IEEE Int. Memory Workshop (IMW) A Verdy, G Navarro, V Sousa, P Noe, M Bernard, F Fillot, G Bourgeois, ... IEEE, 2017 | 5 | 2017 |
| Etude de matériaux chalcogénures amorphes et de leurs propriétés de commutation électrique pour la conception de dispositifs sélecteurs dédiés aux mémoires résistives A Verdy Université Grenoble Alpes, 2020 | 3 | 2020 |
| Innovative GeS2/Sb2Te3 based phase change memory for low power applications J Kluge, A Verdy, G Navarro, S Blonkowski, V Sousa, S Chevalliez, ... 2017 17th Non-Volatile Memory Technology Symposium (NVMTS), 1-4, 2017 | 1 | 2017 |
