| Microstructural origins of localization in InGaN quantum wells RA Oliver, SE Bennett, T Zhu, DJ Beesley, MJ Kappers, DW Saxey, ... Journal of Physics D: Applied Physics 43 (35), 354003, 2010 | 115 | 2010 |
| Unintentional doping in GaN T Zhu, RA Oliver Physical Chemistry Chemical Physics 14 (27), 9558-9573, 2012 | 90 | 2012 |
| Low threshold, room-temperature microdisk lasers in the blue spectral range I Aharonovich, A Woolf, KJ Russell, T Zhu, N Niu, MJ Kappers, RA Oliver, ... Applied Physics Letters 103 (2), 2013 | 83 | 2013 |
| Functional conductive nanomaterials via polymerisation in nano-channels: PEDOT in a MOF T Wang, M Farajollahi, S Henke, T Zhu, SR Bajpe, S Sun, JS Barnard, ... Materials Horizons 4 (1), 64-71, 2017 | 80 | 2017 |
| Wafer-scale fabrication of non-polar mesoporous GaN distributed Bragg reflectors via electrochemical porosification T Zhu, Y Liu, T Ding, WY Fu, J Jarman, CX Ren, RV Kumar, RA Oliver Scientific reports 7 (1), 1-8, 2017 | 73 | 2017 |
| Indium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography F Tang, T Zhu, F Oehler, WY Fu, JT Griffiths, FCP Massabuau, ... Applied Physics Letters 106 (7), 2015 | 63 | 2015 |
| Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures TJ Badcock, M Ali, T Zhu, M Pristovsek, RA Oliver, AJ Shields Applied Physics Letters 109 (15), 2016 | 59 | 2016 |
| Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy T Zhu, F Oehler, BPL Reid, RM Emery, RA Taylor, MJ Kappers, RA Oliver Applied Physics Letters 102 (25), 2013 | 53 | 2013 |
| Surface morphology of homoepitaxial c-plane GaN: Hillocks and ridges F Oehler, T Zhu, S Rhode, MJ Kappers, CJ Humphreys, RA Oliver Journal of crystal growth 383, 12-18, 2013 | 49 | 2013 |
| Distinctive signature of indium gallium nitride quantum dot lasing in microdisk cavities A Woolf, T Puchtler, I Aharonovich, T Zhu, N Niu, D Wang, R Oliver, EL Hu Proceedings of the National Academy of Sciences 111 (39), 14042-14046, 2014 | 47 | 2014 |
| Ultra-low-threshold InGaN/GaN quantum dot micro-ring lasers D Wang, T Zhu, RA Oliver, EL Hu Optics letters 43 (4), 799-802, 2018 | 45 | 2018 |
| Ultrafast, polarized, single-photon emission from m-plane InGaN Quantum Dots on GaN nanowires TJ Puchtler, T Wang, CX Ren, F Tang, RA Oliver, RA Taylor, T Zhu arXiv preprint arXiv:1609.07973, 2016 | 44 | 2016 |
| Effect of threading dislocations on the quality factor of InGaN/GaN microdisk cavities TJ Puchtler, A Woolf, T Zhu, D Gachet, EL Hu, RA Oliver ACS photonics 2 (1), 137-143, 2015 | 41 | 2015 |
| Polarisation-controlled single photon emission at high temperatures from InGaN quantum dots T Wang, TJ Puchtler, T Zhu, JC Jarman, LP Nuttall, RA Oliver, RA Taylor Nanoscale 9 (27), 9421-9427, 2017 | 40 | 2017 |
| Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells FCP Massabuau, L Trinh-Xuan, D Lodié, EJ Thrush, D Zhu, F Oehler, ... Journal of Applied Physics 113 (7), 2013 | 40 | 2013 |
| The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem CJ Humphreys, JT Griffiths, F Tang, F Oehler, SD Findlay, C Zheng, ... Ultramicroscopy 176, 93-98, 2017 | 39 | 2017 |
| Dislocations as channels for the fabrication of sub-surface porous GaN by electrochemical etching FCP Massabuau, PH Griffin, HP Springbett, Y Liu, RV Kumar, T Zhu, ... APL Materials 8 (3), 2020 | 36 | 2020 |
| Microstructural, optical, and electrical characterization of semipolar (112 2) gallium nitride grown by epitaxial lateral overgrowth T Zhu, CF Johnston, MJ Kappers, RA Oliver Journal of Applied Physics 108 (8), 2010 | 36 | 2010 |
| Encapsulation of methylammonium lead bromide perovskite in nanoporous GaN KTP Lim, C Deakin, B Ding, X Bai, P Griffin, T Zhu, RA Oliver, ... APL Materials 7 (2), 2019 | 32 | 2019 |
| Origins of spectral diffusion in the micro-photoluminescence of single InGaN quantum dots BPL Reid, T Zhu, TJ Puchtler, LJ Fletcher, CCS Chan, RA Oliver, ... Japanese Journal of Applied Physics 52 (8S), 08JE01, 2013 | 31 | 2013 |
Rachel OliverProfessor of Materials Science, Cambridge University在 cam.ac.uk 的电子邮件经过验证
