| Demonstration of> 6.0-kV breakdown voltage in large area vertical GaN pn diodes with step-etched junction termination extensions L Yates, BP Gunning, MH Crawford, J Steinfeldt, ML Smith, VM Abate, ... IEEE Transactions on Electron Devices 69 (4), 1931-1937, 2022 | 42 | 2022 |
| Analysis of the dependence of critical electric field on semiconductor bandgap O Slobodyan, J Flicker, J Dickerson, J Shoemaker, A Binder, T Smith, ... Journal of Materials Research 37 (4), 849-865, 2022 | 29 | 2022 |
| Fabless design approach for lateral optimization of low voltage GaN power HEMTs A Binder, JS Yuan, B Krishnan, PM Shea Superlattices and Microstructures 121, 92-106, 2018 | 15 | 2018 |
| Bevel edge termination for vertical GaN power diodes AT Binder, JR Dickerson, MH Crawford, GW Pickrell, AA Allerman, ... 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2019 | 13 | 2019 |
| Etched and regrown vertical GaN junction barrier Schottky diodes AT Binder, GW Pickrell, AA Allerman, JR Dickerson, L Yates, J Steinfeldt, ... 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2021 | 10 | 2021 |
| Development of high-voltage vertical GaN PN diodes RJ Kaplar, BP Gunning, AA Allerman, MH Crawford, JD Flicker, ... 2020 IEEE International Electron Devices Meeting (IEDM), 5.1. 1-5.1. 4, 2020 | 10 | 2020 |
| Optimization of an enhancement-mode AlGaN/GaN/AlGaN DHFET towards a high breakdown voltage and low figure of merit A Binder, JS Yuan 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2017 | 10 | 2017 |
| Overview of wide/ultrawide bandgap power semiconductor devices for distributed energy resources SK Mazumder, LF Voss, KM Dowling, A Conway, D Hall, RJ Kaplar, ... IEEE Journal of Emerging and Selected Topics in Power Electronics 11 (4 …, 2023 | 8 | 2023 |
| Study of avalanche behavior in 3 kV GaN vertical PN diode under UIS stress for edge-termination optimization B Shankar, Z Bian, K Zeng, C Meng, RP Martinez, S Chowdhury, ... 2022 IEEE International Reliability Physics Symposium (IRPS), 2B. 2-1-2B. 2-4, 2022 | 7 | 2022 |
| Simulation and design of step-etched junction termination extensions for GaN power diodes JR Dickerson, AT Binder, G Pickrell, BP Gunning, RJ Kaplar 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-4, 2020 | 7 | 2020 |
| Effects of heterostructure design on performance for low voltage GaN power HEMTs A Binder, S Khan, W Yang, JS Yuan, B Krishnan, PM Shea ECS Journal of Solid State Science and Technology 8 (2), Q15, 2019 | 7 | 2019 |
| A discussion on various experimental methods of impact ionization coefficient measurement in GaN D Ji, K Zeng, Z Bian, B Shankar, BP Gunning, A Binder, JR Dickerson, ... AIP Advances 12 (3), 2022 | 4 | 2022 |
| 20 kV Gallium Nitride Electromagnetic Pulse Arrestor for Grid Reliability. R Kaplar, AA Allerman, BP Gunning, G Pickrell, MH Crawford, ... Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2019 | 4 | 2019 |
| Electro-thermal Simulation and Performance Comparison of 1.2 kV 10 A Vertical GaN MOSFETs. L Yates, A Binder, JR Dickerson, G Pickrell, R Kaplar Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2020 | 3 | 2020 |
| Gate protection for vertical gallium nitride trench MOSFETs: The buried field shield AT Binder, JA Cooper, J Steinfeldt, AA Allerman, R Floyd, L Yates, ... e-Prime-Advances in Electrical Engineering, Electronics and Energy 5, 100218, 2023 | 2 | 2023 |
| Identification of the defect dominating high temperature reverse leakage current in vertical GaN power diodes through deep level transient spectroscopy S DasGupta, O Slobodyan, T Smith, A Binder, J Flicker, R Kaplar, ... Applied Physics Letters 120 (5), 2022 | 2 | 2022 |
| On-Wafer Investigation of Avalanche Robustness in 1.3 kV GaN-on-GaN PN Diode Under Unclamped Inductive Switching Stress B Shankar, K Zeng, B Gunning, KJ Lee, RP Martinez, C Meng, XY Zhou, ... 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2021 | 2 | 2021 |
| Dependence of Critical Electric Field on Semiconductor Bandgap-An Analytical Study. M Hollis, O Slobodyan, JD Flicker, JR Dickerson, A Binder, T Smith, ... Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2020 | 2 | 2020 |
| Analysis of the dependence of critical electric field on semiconductor bandgap R Kaplar, O Slobodyan, J Flicker, JR Dickerson, T Smith, A Binder, ... Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2019 | 2 | 2019 |
| TEM Microstructural Analysis of 8” AlxGa1-xN based Enhancement Mode HEMTs and Correlation of Device Reliability Issues with Lattice Defects B Krishnan, A Kumar, A Velaga, A Binder, JS Yuan, J Su, A Paranjpe GOMACTech 2018, 2018 | 2 | 2018 |
