| Maximizing the performance of 650-V p-GaN gate HEMTs: Dynamic RON characterization and circuit design considerations H Wang, J Wei, R Xie, C Liu, G Tang, KJ Chen IEEE Transactions on Power Electronics 32 (7), 5539-5549, 2016 | 241 | 2016 |
| High-Quality Interface in MIS Structures With In Situ Pre-Gate Plasma Nitridation S Yang, Z Tang, KY Wong, YS Lin, C Liu, Y Lu, S Huang, KJ Chen IEEE Electron Device Letters 34 (12), 1497-1499, 2013 | 185 | 2013 |
| Al2O3/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer S Liu, S Yang, Z Tang, Q Jiang, C Liu, M Wang, KJ Chen IEEE electron device letters 35 (7), 723-725, 2014 | 126 | 2014 |
| Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs M Hua, C Liu, S Yang, S Liu, K Fu, Z Dong, Y Cai, B Zhang, KJ Chen IEEE Transactions on Electron Devices 62 (10), 3215-3222, 2015 | 114 | 2015 |
| High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs with AlN/SiNx Passivation Z Tang, S Huang, Q Jiang, S Liu, C Liu, KJ Chen IEEE electron device letters 34 (3), 366-368, 2013 | 112 | 2013 |
| Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer S Liu, S Yang, Z Tang, Q Jiang, C Liu, M Wang, B Shen, KJ Chen Applied Physics Letters 106 (5), 2015 | 107 | 2015 |
| AC-capacitance techniques for interface trap analysis in GaN-based buried-channel MIS-HEMTs S Yang, S Liu, Y Lu, C Liu, KJ Chen IEEE Transactions on Electron Devices 62 (6), 1870-1878, 2015 | 106 | 2015 |
| GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNxas Gate Dielectric M Hua, C Liu, S Yang, S Liu, K Fu, Z Dong, Y Cai, B Zhang, KJ Chen IEEE Electron Device Letters 36 (5), 448-450, 2015 | 98 | 2015 |
| Low on-resistance normally-off GaN double-channel metal–oxide–semiconductor high-electron-mobility transistor J Wei, S Liu, B Li, X Tang, Y Lu, C Liu, M Hua, Z Zhang, G Tang, KJ Chen IEEE Electron Device Letters 36 (12), 1287-1290, 2015 | 91 | 2015 |
| Thermally stable enhancement-mode GaN metal-isolator-semiconductor high-electron-mobility transistor with partially recessed fluorine-implanted barrier C Liu, S Yang, S Liu, Z Tang, H Wang, Q Jiang, KJ Chen IEEE Electron Device Letters 36 (4), 318-320, 2015 | 69 | 2015 |
| O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors S Huang, X Liu, K Wei, G Liu, X Wang, B Sun, X Yang, B Shen, C Liu, ... Applied Physics Letters 106 (3), 2015 | 69 | 2015 |
| 1.4-kV AlGaN/GaN HEMTs on a GaN-on-SOI platform Q Jiang, C Liu, Y Lu, KJ Chen IEEE electron device letters 34 (3), 357-359, 2013 | 67 | 2013 |
| High RF Performance Enhancement-Mode Al2O3/AlGaN/GaN MIS-HEMTs Fabricated With High-Temperature Gate-Recess Technique S Huang, X Liu, J Zhang, K Wei, G Liu, X Wang, Y Zheng, H Liu, Z Jin, ... IEEE Electron Device Letters 36 (8), 754-756, 2015 | 62 | 2015 |
| Surface nitridation for improved dielectric/III‐nitride interfaces in GaN MIS‐HEMTs KJ Chen, S Yang, Z Tang, S Huang, Y Lu, Q Jiang, S Liu, C Liu, B Li physica status solidi (a) 212 (5), 1059-1065, 2015 | 55 | 2015 |
| Enhancement-mode GaN double-channel MOS-HEMT with low on-resistance and robust gate recess J Wei, S Liu, B Li, X Tang, Y Lu, C Liu, M Hua, Z Zhang, G Tang, KJ Chen 2015 IEEE International Electron Devices Meeting (IEDM), 9.4. 1-9.4. 4, 2015 | 51 | 2015 |
| High-temperature low-damage gate recess technique and ozone-assisted ALD-grown Al2O3gate dielectric for high-performance normally-off GaN MIS-HEMTs S Huang, Q Jiang, K Wei, G Liu, J Zhang, X Wang, Y Zheng, B Sun, ... 2014 IEEE International Electron Devices Meeting, 17.4. 1-17.4. 4, 2014 | 51 | 2014 |
| Dynamic Gate Stress-InducedShift and Its Impact on Dynamicin GaN MIS-HEMTs S Yang, Y Lu, H Wang, S Liu, C Liu, KJ Chen IEEE Electron Device Letters 37 (2), 157-160, 2015 | 46 | 2015 |
| Compatibility of AlN/SiNxPassivation With LPCVD-SiNxGate Dielectric in GaN-Based MIS-HEMT M Hua, Y Lu, S Liu, C Liu, K Fu, Y Cai, B Zhang, KJ Chen IEEE Electron Device Letters 37 (3), 265-268, 2016 | 38 | 2016 |
| Thermally induced threshold voltage instability of III-nitride MIS-HEMTs and MOSC-HEMTs: Underlying mechanisms and optimization schemes S Yang, S Liu, C Liu, Z Tang, Y Lu, KJ Chen 2014 IEEE International Electron Devices Meeting, 17.2. 1-17.2. 4, 2014 | 37 | 2014 |
| Mechanisms of thermally induced threshold voltage instability in GaN-based heterojunction transistors S Yang, S Liu, C Liu, Y Lu, KJ Chen Applied Physics Letters 105 (22), 2014 | 25 | 2014 |
