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Hsiang-Huan Hou/ Matt Hou
Hsiang-Huan Hou/ Matt Hou
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Title
Cited by
Cited by
Year
Ultra low p-type SiGe contact resistance FinFETs with Ti silicide liner using cryogenic contact implantation amorphization and solid-phase epitaxial regrowth (SPER)
YR Yang, N Breil, CY Yang, J Hsieh, F Chiang, B Colombeau, BN Guo, ...
2016 IEEE Symposium on VLSI Technology, 1-2, 2016
272016
Daptomycin‐loaded polymethylmethacrylate bone cement for joint arthroplasty surgery
YM Hsu, CH Liao, YH Wei, HW Fang, HH Hou, CC Chen, CH Chang
Artificial organs 38 (6), 484-492, 2014
182014
Fin Bending Mitigation and Local Layout Effect Alleviation in Advanced FinFET Technology through Material Engineering and Metrology Optimization
TY Wen, B Colombeau, C Li, SY Liu, BN Guo, HV Meer, M Hou, B Yang, ...
2019 Symposium on VLSI Technology, T110-T111, 2019
122019
p-Type MOSFET Contact Resistance Improvement by Conformal Plasma Doping and Nanosecond Laser Annealing
CI Li, N Breil, TY Wen, SY Liu, MS Hsieh, SJ Yen, CW Chang, SH Tsai, ...
IEEE Electron Device Letters 40 (2), 307-309, 2019
72019
FinFET IO Device Performance Gain with Heated Implantation
TY Wen, CI Li, MS Hsieh, SH Tsai, PK Hsieh, SH Lin, HT Chiang, ...
2018 22nd International Conference on Ion Implantation Technology (IIT), 106-109, 2018
42018
28nm device improvement studies by replacing indium with gallium halo
YL Chin, CH Wei, CY Yang, SW Yeh, WF Chang, SC Huang, CK Chiang, ...
2014 International Workshop on Junction Technology (IWJT), 1-4, 2014
22014
Impact of gallium implant for advanced CMOS halo/pocket optimization
YL Chin, CY Yang, TH Lee, SW Yeh, WF Chang, SC Huang, NH Yang, ...
2014 20th International Conference on Ion Implantation Technology (IIT), 1-4, 2014
12014
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