| High-Quality Interface in MIS Structures With In Situ Pre-Gate Plasma Nitridation S Yang, Z Tang, KY Wong, YS Lin, C Liu, Y Lu, S Huang, KJ Chen IEEE Electron Device Letters 34 (12), 1497-1499, 2013 | 185 | 2013 |
| Smart GaN platform: performance & challenges CL Tsai, YH Wang, MH Kwan, PC Chen, FW Yao, SC Liu, JL Yu, CL Yeh, ... 2017 IEEE International Electron Devices Meeting (IEDM), 33.1. 1-33.1. 4, 2017 | 106 | 2017 |
| AlGaN/GaN Schottky barrier diodes on silicon substrates with selective Si diffusion for low onset voltage and high reverse blocking YW Lian, YS Lin, JM Yang, CH Cheng, SSH Hsu IEEE Electron Device Letters 34 (8), 981-983, 2013 | 95 | 2013 |
| AlGaN/GaN HEMTs with low leakage current and high on/off current ratio YS Lin, YW Lain, SSH Hsu IEEE Electron Device Letters 31 (2), 102-104, 2009 | 93 | 2009 |
| Mapping of interface traps in high-performance Al2O3/AlGaN/GaN MIS-heterostructures using frequency- and temperature-dependent C-V techniques S Yang, Z Tang, KY Wong, YS Lin, Y Lu, S Huang, KJ Chen 2013 IEEE International Electron Devices Meeting, 6.3. 1-6.3. 4, 2013 | 90 | 2013 |
| A next generation CMOS-compatible GaN-on-Si transistors for high efficiency energy systems KYR Wong, MH Kwan, FW Yao, MW Tsai, YS Lin, YC Chang, PC Chen, ... 2015 IEEE International Electron Devices Meeting (IEDM), 9.5. 1-9.5. 4, 2015 | 70 | 2015 |
| AlGaN/GaN HEMTs on silicon with hybrid Schottky–ohmic drain for high breakdown voltage and low leakage current YW Lian, YS Lin, HC Lu, YC Huang, SSH Hsu IEEE electron device letters 33 (7), 973-975, 2012 | 61 | 2012 |
| CMOS-compatible GaN-on-Si field-effect transistors for high voltage power applications MH Kwan, KY Wong, YS Lin, FW Yao, MW Tsai, YC Chang, PC Chen, ... 2014 IEEE International Electron Devices Meeting, 17.6. 1-17.6. 4, 2014 | 59 | 2014 |
| High current density InN∕ AlN heterojunction field-effect transistor with a SiNx gate dielectric layer YS Lin, SH Koa, CY Chan, SSH Hsu, HM Lee, S Gwo Applied physics letters 90 (14), 2007 | 48 | 2007 |
| Drain current enhancement and negligible current collapse in GaN MOSFETs with atomic-layer-deposited HfO2 as a gate dielectric YC Chang, WH Chang, YH Chang, J Kwo, YS Lin, SH Hsu, JM Hong, ... Microelectronic engineering 87 (11), 2042-2045, 2010 | 31 | 2010 |
| Threshold voltage drift (PBTI) in GaN D-MODE MISHEMTs: Characterization of fast trapping components GP Lansbergen, KY Wong, YS Lin, JL Yu, FJ Yang, CL Tsai, AS Oates 2014 IEEE International Reliability Physics Symposium, 6C. 4.1-6C. 4.6, 2014 | 30 | 2014 |
| Drain E-field manipulation in AlGaN/GaN HEMTs by Schottky extension technology YW Lian, YS Lin, HC Lu, YC Huang, SSH Hsu IEEE Transactions on Electron Devices 62 (2), 519-524, 2015 | 28 | 2015 |
| Impacts of gate recess and passivation on AlGaN/GaN high electron mobility transistors CY Chan, TC Lee, SSH Hsu, L Chen, YS Lin Japanese Journal of Applied Physics 46 (2R), 478, 2007 | 27 | 2007 |
| Mapping of interface traps in high-performance Al S Yang, Z Tang, KY Wong, YS Lin, Y Lu, S Huang IEDM Tech. Dig, 6.3, 2013 | 25 | 2013 |
| Integrated ESD Protection Circuit for GaN Based Device YS Lin, MC Lin, KY Wong, JL Yu, CL Tsai US Patent App. 15/215,651, 2018 | 22 | 2018 |
| Square-gate AlGaN/GaN HEMTs with improved trap-related characteristics YS Lin, JY Wu, CY Chan, SSH Hsu, CF Huang, TC Lee IEEE transactions on electron devices 56 (12), 3207-3211, 2009 | 21 | 2009 |
| GaN-on-silicon devices and technologies for RF and microwave applications SSH Hsu, CW Tsou, YW Lian, YS Lin 2016 IEEE International Symposium on Radio-Frequency Integration Technology …, 2016 | 20 | 2016 |
| AlGaN/GaN MIS-HFET with improvement in high temperature gate bias stress-induced reliability KY Wong, YS Lin, CW Hsiung, GP Lansbergen, MC Lin, FW Yao, CJ Yu, ... 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's …, 2014 | 20 | 2014 |
| Transistor having metal diffusion barrier KY Wong, PC Chen, YU Chen-Ju, FC Yang, JLJ Yu, YAO Fu-Wei, RY Su, ... US Patent 9,443,969, 2016 | 17 | 2016 |
| Impact of STI Effect on Flicker Noise in 0.13- RF nMOSFETs CY Chan, YS Lin, YC Huang, SSH Hsu, YZ Juang IEEE transactions on electron devices 54 (12), 3383-3392, 2007 | 17 | 2007 |
