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Per-Åke Nilsson
Per-Åke Nilsson
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Year
Crystal defects as source of anomalous forward voltage increase of 4H-SiC diodes
JP Bergman, H Lendenmann, PÅ Nilsson, U Lindefelt, P Skytt
Materials Science Forum 353, 2001
3772001
Weak links and dc SQUIDS on artificial nonsymmetric grain boundaries in YBa2Cu3O7−δ
ZG Ivanov, PÅ Nilsson, D Winkler, JA Alarco, T Claeson, EA Stepantsov, ...
Applied physics letters 59 (23), 3030-3032, 1991
3351991
Long term operation of 4.5 kV PiN and 2.5 kV JBS diodes
H Lendenmann, F Dahlquist, N Johansson, R Söderholm, PA Nilsson, ...
Materials Science Forum 353, 2001
3122001
The European spallation source design
R Garoby, A Vergara, H Danared, I Alonso, E Bargallo, B Cheymol, ...
Physica Scripta 93 (1), 014001, 2017
2912017
Electromagnetic properties at the grain boundary interface of a YBa 2 Cu 3 O 7− δ bicrystal Josephson junction
D Winkler, YM Zhang, PÅ Nilsson, EA Stepantsov, T Claeson
Physical review letters 72 (8), 1260, 1994
1571994
Ultralow-power cryogenic InP HEMT with minimum noise temperature of 1 K at 6 GHz
J Schleeh, G Alestig, J Halonen, A Malmros, B Nilsson, PA Nilsson, ...
IEEE Electron Device Letters 33 (5), 664-666, 2012
1372012
On the large-signal modelling of AlGaN/GaN HEMTs and SiC MESFETs
I Angelov, V Desmaris, K Dynefors, PA Nilsson, N Rorsman, H Zirath
European Gallium Arsenide and Other Semiconductor Application Symposium …, 2005
1332005
Reduction of 1/f noise in high‐T dc superconducting quantum interference devices cooled in an ambient magnetic field
E Dantsker, S Tanaka, PÅ Nilsson, R Kleiner, J Clarke
Applied physics letters 69, 4099, 1996
1251996
Phonon black-body radiation limit for heat dissipation in electronics
J Schleeh, J Mateos, I Íñiguez-de-la-Torre, N Wadefalk, PA Nilsson, ...
Nature materials 14 (2), 187-192, 2015
1032015
Fabrication and characterization of field-plated buried-gate SiC MESFETs
K Andersson, M Sudow, PA Nilsson, E Sveinbjornsson, H Hjelmgren, ...
IEEE electron device letters 27 (7), 573-575, 2006
942006
An AlGaN/GaN HEMT-based microstrip MMIC process for advanced transceiver design
M Sudow, M Fagerlind, M Thorsell, K Andersson, N Billstrom, PÅ Nilsson, ...
IEEE Transactions on Microwave Theory and Techniques 56 (8), 1827-1833, 2008
782008
High field-effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material
G Gudjonsson, HO Olafsson, F Allerstam, PA Nilsson, EO Sveinbjornsson, ...
IEEE electron device letters 26 (2), 96-98, 2005
772005
0.3–14 and 16–28 GHz wide-bandwidth cryogenic MMIC low-noise amplifiers
E Cha, N Wadefalk, PÅ Nilsson, J Schleeh, G Moschetti, A Pourkabirian, ...
IEEE Transactions on Microwave Theory and Techniques 66 (11), 4860-4869, 2018
682018
Microstructure of an artificial grain boundary weak link in an YBa2Cu3O7− σ thin film grown on a (100)(110),[001]-tilt Y-ZrO2 bicrystal
JA Alarco, E Olsson, ZG Ivanov, PÅ Nilsson, D Winkler, EA Stepantsov, ...
Ultramicroscopy 51 (1-4), 239-246, 1993
681993
Cryogenic broadband ultra-low-noise MMIC LNAs for radio astronomy applications
J Schleeh, N Wadefalk, PÅ Nilsson, JP Starski, J Grahn
IEEE transactions on microwave theory and techniques 61 (2), 871-877, 2013
672013
Characterization and Modeling of Cryogenic Ultralow-Noise InP HEMTs
J Schleeh, H Rodilla, N Wadefalk, PÅ Nilsson, J Grahn
IEEE, 2013
632013
Thermal study of the high-frequency noise in GaN HEMTs
M Thorsell, K Andersson, M Fagerlind, M Sudow, PA Nilsson, N Rorsman
IEEE Transactions on Microwave Theory and Techniques 57 (1), 19-26, 2008
572008
Method for producing a pn-junction for a semiconductor device of SiC
PÅ Nilsson
US Patent 6,083,814, 2000
572000
Terahertz detection in zero-bias InAs self-switching diodes at room temperature
A Westlund, P Sangaré, G Ducournau, PÅ Nilsson, C Gaquiere, ...
Applied Physics Letters 103 (13), 2013
552013
Graphene self-switching diodes as zero-bias microwave detectors
A Westlund, M Winters, IG Ivanov, J Hassan, PÅ Nilsson, E Janzén, ...
Applied Physics Letters 106 (9), 2015
482015
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