| Broadband infrared photodetector based on nanostructured MoSe2–Si heterojunction extended up to 2.5 μm spectral range JW John, V Dhyani, S Maity, S Mukherjee, SK Ray, V Kumar, S Das Nanotechnology 31 (45), 455208, 2020 | 44 | 2020 |
| Role of Internet of Things in disaster management JJ Wellington, P Ramesh 2017 International Conference on Innovations in Information, Embedded and …, 2017 | 41 | 2017 |
| Low-noise, high-detectivity, polarization-sensitive, room-temperature infrared photodetectors based on Ge quantum dot-decorated Si-on-insulator nanowire field-effect transistors JW John, V Dhyani, S Singh, A Jakhar, A Sarkar, S Das, SK Ray Nanotechnology 32 (31), 315205, 2021 | 26 | 2021 |
| MoSe2/n‐GaN Heterojunction Induced High Photoconductive Gain for Low‐Noise Broadband Photodetection from Ultraviolet to Near‐Infrared Wavelengths HK Sandhu, JW John, A Jakhar, A Sharma, A Jain, S Das Advanced Materials Interfaces 9 (12), 2102200, 2022 | 17 | 2022 |
| Self-powered, low-noise and high-speed nanolayered MoSe2/p-GaN heterojunction photodetector from ultraviolet to near-infrared wavelengths HK Sandhu, JW John, A Jakhar, A Sharma, A Jain, S Das Nanotechnology 33 (30), 305201, 2022 | 13 | 2022 |
| Diameter-dependent photoresponse with high internal gain in a back gated single Si nanowire phototransistor V Dhyani, A Jakhar, S Das Journal of Physics D: Applied Physics 52 (42), 425103, 2019 | 11 | 2019 |
| Ultrahigh negative infrared photoconductance in highly As-doped germanium nanowires induced by hot electron trapping JW John, V Dhyani, YM Georgiev, AS Gangnaik, S Biswas, JD Holmes, ... ACS Applied Electronic Materials 2 (7), 1934-1942, 2020 | 9 | 2020 |
| Probing charge traps at the 2D semiconductor/dielectric interface JW John, A Mishra, R Debbarma, IA Verzhbitskiy, KEJ Goh Nanoscale 15, 16807-16817, 2023 | 4 | 2023 |
| Black-arsenic/germanium-on-insulator heterostructure field effect transistor for ultrafast polarization sensitive short-wave infrared photodetection JW John, V Dhyani, A Jakhar, HK Sandhu, S Dewan, SK Ray, S Das IEEE Electron Device Letters 43 (9), 1495-1498, 2022 | 2 | 2022 |
| Nanoironing van der Waals Heterostructures toward Electrically Controlled Quantum Dots T Talha-Dean, Y Tarn, S Mukherjee, JW John, D Huang, IA Verzhbitskiy, ... ACS Applied Materials & Interfaces, 2024 | 1 | 2024 |
| High‐Performance Air‐Stable 2D‐WSe2/P3HT Based Inorganic–Organic Hybrid Photodetector with Broadband Visible to Near‐IR Light Detection PD Khanikar, S Dewan, JW John, A Shukla, P Das, S Dhara, S Karak, ... Advanced Electronic Materials 9 (12), 2300514, 2023 | 1 | 2023 |
| Room-temperature infrared photoluminescence and broadband photodetection characteristics of Ge/GeSi islands on silicon-on-insulator S Singh, JW John, A Sarkar, V Dhyani, S Das, SK Ray Nanotechnology, 2024 | | 2024 |
| Toward Phonon-Limited Transport in Two-Dimensional Electronics by Oxygen-Free Fabrication S Mukherjee, S Wang, D Venkatakrishnarao, Y Tarn, T Talha-Dean, ... arXiv preprint arXiv:2409.08453, 2024 | | 2024 |
| Selectively Al2O3 Passivated WSe2/GaN Heterostructure for Ultralow-Noise High-Speed Broadband Photodetection HK Sandhu, PD Khanikar, JW John, A Sharma, A Jain, S Das ACS Applied Electronic Materials 6 (8), 6284-6291, 2024 | | 2024 |
| Large‐Scale Solution‐Processed Ultrathin 2D Tri‐layer Heterostructures for Photodetector Applications P Yadav, J Wellington John, A Kumar Ganguli ChemistrySelect 9 (10), e202304811, 2024 | | 2024 |
| Large area, low power MoSe 2 nanostructures based Infrared photodetectors on flexible substrates beyond $2.3\\mu\mathrm {m} $ JJ Wellington, V Dhyani, S Maity, S Mukherjee, SK Ray, S Das 2020 5th IEEE International Conference on Emerging Electronics (ICEE), 1-4, 2020 | | 2020 |
| Group IV Semiconductor Nanostructures and their Heterojunctions with Layered Materials for Infrared Detection JJ WELLINGTON Delhi, 0 | | |
Samaresh Das, Prof.Indian institute of technology, Tyndall National Institute, Hitachi Cambridge LabVerified email at care.iitd.ac.in
