| Epitaxial growth of Ga-doped SiGe for reduction of contact resistance in finFET source/drain materials J Margetis, D Kohen, C Porret, L Lima, R Khazaka, G Rengo, R Loo, ... ECS Transactions 93 (1), 7, 2019 | 12 | 2019 |
| Highly Doped Si1-XGex Epitaxy in View of S/D Applications G Rengo, C Porret, AY Hikavyy, E Rosseel, N Nakazaki, G Pourtois, ... ECS Transactions 98 (5), 27, 2020 | 9 | 2020 |
| Epitaxial growth of active Si on top of SiGe etch stop layer in view of 3D device integration R Loo, A Jourdain, G Rengo, C Porret, A Hikavyy, M Liebens, L Becker, ... ECS Journal of Solid State Science and Technology 10 (1), 014001, 2021 | 4 | 2021 |
| B and Ga Co-Doped Si1− xGex for p-Type Source/Drain Contacts G Rengo, C Porret, A Hikavyy, E Rosseel, M Ayyad, RJH Morris, ... ECS Journal of Solid State Science and Technology 11 (2), 024008, 2022 | 2 | 2022 |
| Low temperature source/drain epitaxy and functional silicides: essentials for ultimate contact scaling C Porret, JL Everaert, M Schaekers, LA Ragnarsson, A Hikavyy, ... 2022 International Electron Devices Meeting (IEDM), 34.1. 1-34.1. 4, 2022 | 1 | 2022 |
| Low Temperature Epitaxy of In Situ GaDoped Si1-XGex: Dopant Incorporation, Structural and Electrical Properties G Rengo, C Porret, AY Hikavyy, G Coenen, M Ayyad, RJH Morris, ... ECS Transactions 109 (4), 249, 2022 | 1 | 2022 |
| Effect of Strain on the Epitaxy of B-Doped Si0. 5Ge0. 5 Source/Drain Layers G Rengo, C Porret, AY Hikavyy, E Rosseel, M Ayyad, RJH Morris, ... ECS Transactions 104 (4), 167, 2021 | 1 | 2021 |
| (Invited) Characterization of Doping and Activation Processes Using Differential Hall Effect Metrology (DHEM) A Joshi, G Rengo, C Porret, KL Lin, CH Chang, BM Basol Electrochemical Society Meeting Abstracts 239, 1009-1009, 2021 | 1 | 2021 |
| Characterization of Annealing and Dopant Activation Processes Using Differential Hall Effect Metrology (DHEM) A Joshi, G Rengo, C Porret, KL Lin, CH Chang, BM Basol ECS Transactions 102 (2), 113, 2021 | 1 | 2021 |
| Low temperature selective growth of Ga-doped and Ga–B co-doped germanium source/drain for PMOS devices C Porret, G Rengo, M Ayyad, A Hikavyy, E Rosseel, R Langer, R Loo Japanese Journal of Applied Physics 62 (SC), SC1043, 2023 | | 2023 |
| Ab initio investigation of Ga doping in Si1-xGex: effect of biaxial strain and interaction of dopants with point-defects G Rengo, G Pourtois, C Porret, R Loo, A Vantomme Extended Abstracts of the 2022 International Conference on Solid State …, 2022 | | 2022 |
| (Invited) Strain-Related Peculiarities of B Incorporation in Epitaxial Si1-XGex Source/Drain Materials and Their Impact on Electrical Properties C Porret, G Rengo, AY Hikavyy, E Rosseel, M Ayyad, RJH Morris, ... Electrochemical Society Meeting Abstracts 239, 1096-1096, 2021 | | 2021 |
| Effect of Strain on the Epitaxy of B-Doped Si0. 5Ge0. 5 Source/Drain Layers A Vantomme, G Rengo, C Porret, A Hikavyy, E Rosseel, M Ayyad, ... | | 2021 |
| Epitaxial Growth of Active Si on Top of SiGe Etch Stop Layer in View of 3D Device Integration L Becker, P Storck, R Loo, A Jourdain, G Rengo, C Porret, A Hikavyy, ... ELECTROCHEMICAL SOC INC, 2021 | | 2021 |
| B and Ga Co-Doping in Epitaxial SiGe: Challenges and Opportunities C Porret, G Rengo, AY Hikavyy, L Lima, Q Xie, B Douhard, M Ayyad, ... Electrochemical Society Meeting Abstracts prime2020, 1732-1732, 2020 | | 2020 |
| Epitaxial growth of active Si on top of SiGe etch stop layer in view of 3D device integration R Loo, A Jourdain, G Rengo, C Porret, AY Hikavyy, M Liebens, L Becker, ... ECS Transactions 98 (4), 157, 2020 | | 2020 |
| Highly doped SiGe epitaxy in view of S/D applications G Rengo, C Porret, A Hikavyy, E Rosseel, N Nakazaki, G Pourtois, ... | | 2020 |
| Low Ti/SiGe: B contact resistivities by optimizing strain in epitaxial SiGe: B/Si and thermal treatments applied to contacts YH Huang, C Porret, A Hikavyy, G Rengo, H Yu, M Schaekers, ... EMRS Fall Meeting 2019, Location: Warsaw, Poland, 2019 | | 2019 |
| Improving the electrical properties of epitaxial SiGe: B with excimer laser annealing treatments YH Huang, G Rengo, C Porret, A Hikavyy, L Lima, R Khazaka, D Kohen, ... EMRS Fall Meeting 2019, Location: Warsaw, Poland, 2019 | | 2019 |
| Epitaxial SiGe: B for advanced p-MOS contacts: low contact resistivities achieved by optimizing strain in SiGe and thermal treatments applied to contacts YH Huang, C Porret, A Hikavyy, G Rengo, H Yu, M Schaekers, ... | | 2019 |
