| Effects of spin-orbit coupling on the electronic properties of the buckled III–V monolayers N Hasani, A Rajabi-Maram, SB Touski Journal of Magnetism and Magnetic Materials 543, 168638, 2022 | 13 | 2022 |
| Tuning electronic properties of MSb (M= C, Si, Ge and Sn) monolayers by strain engineering A Rajabi-Maram, N Hasani, SB Touski Physica E: Low-dimensional Systems and Nanostructures 138, 115065, 2022 | 11 | 2022 |
| Strain engineering of electronic and spin properties in SnX (X= P, As, Sb, Bi) monolayers N Hasani, A Rajabi-Maram, SB Touski Journal of Physics and Chemistry of Solids 174, 111131, 2023 | 10 | 2023 |
| Structural and electronic properties of hexagonal MXH (M= C, Si, Ge and Sn; X= N, P, As and Sb) monolayers: A first-principles prediction A Rajabi-Maram, N Hasani, SB Touski Physica E: Low-dimensional Systems and Nanostructures 151, 115710, 2023 | 6 | 2023 |
| Electrical Properties of Double-Gate Field-Effect Transistor Based on MAN (M Ti, Zr, and Hf; A Si, Ge, and Sn) Monolayers N Hasani, M Shalchian, A Rajabi-Maram, SB Touski IEEE Transactions on Electron Devices, 2023 | 1 | 2023 |
| Prediction of Band Inversion in Janus In2XYZ (X, Y, and Z= S, Se, Te) monolayers A Rajabi-Maram, SB Touski, N Hasani, M Shalchian Physical Chemistry Chemical Physics, 2024 | | 2024 |
Shoeib Babaee TouskiHamedan University of TechnologyVerified email at hut.ac.ir
