| Large-area 1.2-kV GaN vertical power FinFETs with a record switching figure of merit Y Zhang, M Sun, J Perozek, Z Liu, A Zubair, D Piedra, N Chowdhury, ... IEEE Electron Device Letters 40 (1), 75-78, 2018 | 143 | 2018 |
| Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations HP Lee, J Perozek, LD Rosario, C Bayram Scientific reports 6 (1), 37588, 2016 | 111 | 2016 |
| GaN FinFETs and trigate devices for power and RF applications: Review and perspective Y Zhang, A Zubair, Z Liu, M Xiao, J Perozek, Y Ma, T Palacios Semiconductor Science and Technology 36 (5), 054001, 2021 | 90 | 2021 |
| First demonstration of GaN vertical power FinFETs on engineered substrate A Zubair, J Perozek, J Niroula, O Aktas, V Odnoblyudov, T Palacios 2020 Device Research Conference (DRC), 1-2, 2020 | 16 | 2020 |
| Investigation of structural, optical, and electrical characteristics of an AlGaN/GaN high electron mobility transistor structure across a 200 mm Si (1 1 1) substrate J Perozek, HP Lee, B Krishnan, A Paranjpe, KB Reuter, DK Sadana, ... Journal of Physics D: Applied Physics 50 (5), 055103, 2017 | 16 | 2017 |
| InAlN/GaN-on-Si HEMT with 4.5 W/mm in a 200-mm CMOS-Compatible MMIC Process for 3D Integration S Warnock, CL Chen, J Knechtl, R Molnar, DR Yost, M Cook, C Stull, ... 2020 IEEE/MTT-S International Microwave Symposium (IMS), 289-292, 2020 | 14 | 2020 |
| GaN 2.0: Power FinFETs, complementary gate drivers and low-cost vertical devices T Palacios, A Zubair, J Niroula, J Perozek, N Chowdhury, D Pei, M Dipsey, ... 2021 33rd International Symposium on Power Semiconductor Devices and ICs …, 2021 | 9 | 2021 |
| Vertical gallium nitride fin transistors for RF applications JA Perozek Massachusetts Institute of Technology, 2020 | 3 | 2020 |
| Small-Signal, High Frequency Performance of Vertical GaN FinFETs with fmax = 5.9 GHz JA Perozek, A Zubair, T Palacios 2021 Device Research Conference (DRC), 1-2, 2021 | 2 | 2021 |
| Scaling AlGaN/GaN high electron mobility transistor structures onto 200-mm silicon (111) substrates through novel buffer layer configurations HP Lee, J Perozek, C Bayram 2017 International Conference on Compound Semiconductor Manufacturing …, 2017 | 2 | 2017 |
| First Demonstration of Optically-Controlled Vertical GaN finFET for Power Applications JH Hsia, JA Perozek, T Palacios IEEE Electron Device Letters, 2024 | | 2024 |
| Anode-Integrated GaN Field Emitter Arrays for Compact Vacuum Transistors PC Shih, J Perozek, AI Akinwande, T Palacios IEEE Electron Device Letters, 2023 | | 2023 |
| Vertical GaN Fin Transistors for Power and RF Applications J Perozek, A Munoz, T Palacios, ... | | 2019 |
| Thin-film GaN HEMTs for flexible electronics J Perozek | | 2017 |
| Vertical Gallium Nitride FinFETs for RF Applications J Perozek, A Zubair, T Palacios Electronic, Magnetic, Superconducting, and Quantum Devices, 32, 0 | | |
| Supplementary Online Material for:“Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer … HP Lee, J Perozek, LD Rosario, C Bayram | | |
