High mobility 2D palladium diselenide field‐effect transistors with tunable ambipolar characteristics WL Chow, P Yu, F Liu, J Hong, X Wang, Q Zeng, CH Hsu, C Zhu, J Zhou, ... Advanced Materials 29 (21), 1602969, 2017 | 297 | 2017 |
One-Step Synthesis of Metal/Semiconductor Heterostructure NbS2/MoS2 Q Fu, X Wang, J Zhou, J Xia, Q Zeng, D Lv, C Zhu, X Wang, Y Shen, X Li, ... Chemistry of Materials 30 (12), 4001-4007, 2018 | 91 | 2018 |
Morphology Engineering in Monolayer MoS2‐WS2 Lateral Heterostructures J Zhou, B Tang, J Lin, D Lv, J Shi, L Sun, Q Zeng, L Niu, F Liu, X Wang, ... Advanced Functional Materials 28 (31), 1801568, 2018 | 81 | 2018 |
Atomic scale stability of tungsten–cobalt intermetallic nanocrystals in reactive environment at high temperature F Yang, H Zhao, X Wang, X Liu, Q Liu, X Liu, C Jin, R Wang, Y Li Journal of the American Chemical Society 141 (14), 5871-5879, 2019 | 41 | 2019 |
In-situ fabrication of Mo6S6-nanowire-terminated edges in monolayer molybdenum disulfide W Huang, X Wang, X Ji, Z Zhang, C Jin Nano Research 11, 5849-5857, 2018 | 38 | 2018 |
Embedding Ultrafine and High‐Content Pt Nanoparticles at Ceria Surface for Enhanced Thermal Stability JS Du, T Bian, J Yu, Y Jiang, X Wang, Y Yan, Y Jiang, C Jin, H Zhang, ... Advanced Science 4 (9), 1700056, 2017 | 21 | 2017 |
Deriving 2D M 2 X 3 (M= Mo, W, X= S, Se) by periodic assembly of chalcogen vacancy lines in their MX 2 counterparts X Wang, X Guan, X Ren, T Liu, W Huang, J Cao, C Jin Nanoscale 12 (15), 8285-8293, 2020 | 19 | 2020 |
Atomic-precision fabrication of quasi-full-space grain boundaries in two-dimensional hexagonal boron nitride X Ren, X Wang, C Jin Nano Letters 19 (12), 8581-8589, 2019 | 16 | 2019 |
Nanopores incorporating ITO electrodes for electrical gating of DNA at different folding states X Zhu, X Wang, Z Cao, Z Ye, C Gu, CH Jin, Y Liu 2017 IEEE International Electron Devices Meeting (IEDM), 26.6. 1-26.6. 4, 2017 | 5 | 2017 |