S. T. Picraux
S. T. Picraux
Verified email at lanl.gov
TitleCited byYear
Materials analysis by ion channeling: submicron crystallography
LC Feldman, JW Mayer, STA Picraux
Academic Press, 2012
15012012
Materials analysis by ion channeling: submicron crystallography
LC Feldman, JW Mayer, STA Picraux
Academic Press, 2012
15012012
Anisotropic swelling and fracture of silicon nanowires during lithiation
XH Liu, H Zheng, L Zhong, S Huang, K Karki, LQ Zhang, Y Liu, A Kushima, ...
Nano letters 11 (8), 3312-3318, 2011
5822011
In situ atomic-scale imaging of electrochemical lithiation in silicon
XH Liu, JW Wang, S Huang, F Fan, X Huang, Y Liu, S Krylyuk, J Yoo, ...
Nature nanotechnology 7 (11), 749, 2012
4192012
Ultrafast electrochemical lithiation of individual Si nanowire anodes
XH Liu, LQ Zhang, L Zhong, Y Liu, H Zheng, JW Wang, JH Cho, ...
Nano letters 11 (6), 2251-2258, 2011
3532011
Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering
JW Mayer, L Eriksson, ST Picraux, JA Davies
Canadian Journal of Physics 46 (6), 663-673, 1968
3501968
Adaptable silicon–carbon nanocables sandwiched between reduced graphene oxide sheets as lithium ion battery anodes
B Wang, X Li, X Zhang, B Luo, M Jin, M Liang, SA Dayeh, ST Picraux, ...
ACS nano 7 (2), 1437-1445, 2013
3412013
Reversible nanopore formation in Ge nanowires during lithiation–delithiation cycling: An in situ transmission electron microscopy study
XH Liu, S Huang, ST Picraux, J Li, T Zhu, JY Huang
Nano letters 11 (9), 3991-3997, 2011
3172011
Epitaxial growth of rare‐earth silicides on (111) Si
JA Knapp, ST Picraux
Applied physics letters 48 (7), 466-468, 1986
3041986
Ion beams in silicon processing and characterization
E Chason, ST Picraux, JM Poate, JO Borland, MI Current, ...
Journal of applied physics 81 (10), 6513-6561, 1997
2921997
Lotus effect amplifies light-induced contact angle switching
R Rosario, D Gust, AA Garcia, M Hayes, JL Taraci, T Clement, JW Dailey, ...
The Journal of Physical Chemistry B 108 (34), 12640-12642, 2004
2612004
Dependence of critical layer thickness on strain for InxGa1−xAs/GaAs strained‐layer superlattices
IJ Fritz, ST Picraux, LR Dawson, TJ Drummond, WD Laidig, NG Anderson
Applied Physics Letters 46 (10), 967-969, 1985
2491985
Formation of SiC in silicon by ion implantation
JA Borders, ST Picraux, W Beezhold
Applied Physics Letters 18 (11), 509-511, 1971
2251971
Critical stresses for Si x Ge 1− x strained-layer plasticity
JY Tsao, BW Dodson, ST Picraux, DM Cornelison
Physical review letters 59 (21), 2455, 1987
2151987
Role of integrated lateral stress in surface deformation of He‐implanted surfaces
EP EerNisse, ST Picraux
Journal of Applied Physics 48 (1), 9-17, 1977
2061977
Defect trapping of ion‐implanted deuterium in Fe
SM Myers, ST Picraux, RE Stoltz
Journal of Applied Physics 50 (9), 5710-5719, 1979
1911979
Precipitation and relaxation in strained Si1−yCy/Si heterostructures
JW Strane, HJ Stein, SR Lee, ST Picraux, JK Watanabe, JW Mayer
Journal of applied physics 76 (6), 3656-3668, 1994
1741994
Are nanoporous materials radiation resistant?
EM Bringa, JD Monk, A Caro, A Misra, L Zepeda-Ruiz, M Duchaineau, ...
Nano letters 12 (7), 3351-3355, 2011
1732011
Partitioning of ion-induced surface and bulk displacements
DK Brice, JY Tsao, ST Picraux
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1989
1681989
New uses of ion accelerators
J Ziegler
Springer Science & Business Media, 2012
1572012
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Articles 1–20