关注
Keun Wook Shin
Keun Wook Shin
Samsung Advanced Institute of Technology
在 snu.ac.kr 的电子邮件经过验证
标题
引用次数
引用次数
年份
Fully stretchable optoelectronic sensors based on colloidal quantum dots for sensing photoplethysmographic signals
TH Kim, CS Lee, S Kim, J Hur, S Lee, KW Shin, YZ Yoon, MK Choi, ...
Acs Nano 11 (6), 5992-6003, 2017
1322017
Highthroughput growth of waferscale monolayer transition metal dichalcogenide via vertical ostwald ripening
M Seol, MH Lee, H Kim, KW Shin, Y Cho, I Jeon, M Jeong, HI Lee, J Park, ...
Advanced Materials 32 (42), 2003542, 2020
862020
Two-dimensional materials inserted at the metal/semiconductor interface: Attractive candidates for semiconductor device contacts
MH Lee, Y Cho, KE Byun, KW Shin, SG Nam, C Kim, H Kim, SA Han, ...
Nano letters 18 (8), 4878-4884, 2018
412018
The effects of low temperature buffer layer on the growth of pure Ge on Si (001)
KW Shin, HW Kim, J Kim, C Yang, S Lee, E Yoon
Thin Solid Films 518 (22), 6496-6499, 2010
302010
Control of Crack Formation for the Fabrication of Crack-Free and Self-Isolated High-Efficiency Gallium Arsenide Photovoltaic Cells on Silicon Substrate
S Oh, DH Jun, KW Shin, IH Choi, SH Jung, JH Choi, W Park, Y Park, ...
IEEE Journal of Photovoltaics 6 (4), 1031 - 1035, 2016
242016
Fabrication of metal/graphene hybrid interconnects by direct graphene growth and their integration properties
CS Lee, KW Shin, HJ Song, H Park, Y Cho, DH Im, H Lee, JH Lee, ...
Advanced Electronic Materials 4 (6), 1700624, 2018
212018
High quality Ge epitaxial layers on Si by ultrahigh vacuum chemical vapor deposition
HW Kim, KW Shin, GD Lee, E Yoon
Thin Solid Films 517 (14), 3990-3994, 2009
192009
Wiring structure and electronic device employing the same
C Lee, S Hyeonjin, S Park, IM Donghyun, H Park, S Keunwook, J Lee, ...
US Patent App. 14/625,282, 2015
142015
Growth of Si-doped GaInP on Ge-on-Si substrates and its photoluminescence characteristics
C Yang, S Lee, K Wook Shin, S Oh, J Park, CZ Kim, WK Park, S Ha, ...
Applied Physics Letters 99 (9), 2011
132011
Nanocrystalline graphene and method of forming nanocrystalline graphene
S Hyunjae, S Keunwook, S Hyeonjin, C Lee, KIM Changhyun, ...
US Patent 11,180,373, 2021
122021
Method of forming nanocrystalline graphene, and device including nanocrystalline graphene
A Jung, S Keunwook, KE Byun, S Hyeonjin, H Lim, NAM Seunggeol, ...
US Patent 10,850,985, 2020
122020
Barrier height control in metal/silicon contacts with atomically thin MoS2 and WS2 interfacial layers
SG Nam, Y Cho, MH Lee, KW Shin, C Kim, K Yang, M Jeong, HJ Shin, ...
2D Materials 5 (4), 041004, 2018
112018
Lattice contraction with boron doping in fully strained SiGe epitaxial layers
KW Shin, S Song, HW Kim, GD Lee, E Yoon
Japanese Journal of Applied Physics 57 (6), 065504, 2018
112018
Effects of growth temperature on surface morphology of InP grown on patterned Si (0 0 1) substrates
SM Lee, YJ Cho, JB Park, KW Shin, E Hwang, S Lee, MJ Lee, SH Cho, ...
Journal of Crystal Growth 416, 113-117, 2015
112015
Method of forming graphene
S Keunwook, KIM Changhyun, K Yamamoto, C Lee, S Hyunjae, E Lee, ...
US Patent 11,094,538, 2021
102021
Electronic device and method of manufacturing the same
HEO Jinseong, LEE Yunseong, JO Sanghyun, S Keunwook, S Hyeonjin
US Patent 10,937,885, 2021
102021
Study of Selective Graphene Growth on Non-Catalytic Hetero-Substrates
KW Shin, Y Cho, Y Lee, H Lee, SG Nam, KE Byun, CS Lee, S Park, ...
2D Materials 7 (1), 011002, 2019
82019
Characterization of deep levels in GaInP on Ge and Ge-on-Si substrates by photoluminescence and cathodoluminescence
C Yang, S Lee, KW Shin, S Oh, D Moon, SD Kim, YW Kim, CZ Kim, ...
Journal of crystal growth 370, 168-172, 2013
82013
Method of pre-treating substrate and method of directly forming graphene using the same
S Keunwook, J Lee, NAM Seunggeol, S Hyeonjin, H Lim, A Jung, ...
US Patent App. 16/807,702, 2020
72020
Methods and apparatuses for forming graphene
S Hyunjae, E Lee, C Lee, KIM Changhyun, KE Byun, S Keunwook, ...
US Patent App. 16/860,465, 2020
62020
系统目前无法执行此操作,请稍后再试。
文章 1–20