Hong Zhou
Cited by
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Steep-slope hysteresis-free negative capacitance MoS2 transistors
M Si, CJ Su, C Jiang, NJ Conrad, H Zhou, KD Maize, G Qiu, CT Wu, ...
Nature nanotechnology 13 (1), 24-28, 2018
High-Performance Depletion/Enhancement-ode -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm
H Zhou, M Si, S Alghamdi, G Qiu, L Yang, DY Peide
IEEE Electron Device Letters 38 (1), 103-106, 2016
β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect
H Zhou, K Maize, G Qiu, A Shakouri, PD Ye
Applied Physics Letters 111 (9), 092102, 2017
Controlled growth of a large-size 2D selenium nanosheet and its electronic and optoelectronic applications
J Qin, G Qiu, J Jian, H Zhou, L Yang, A Charnas, DY Zemlyanov, CY Xu, ...
ACS nano 11 (10), 10222-10229, 2017
Field-Plated Lateral -Ga2O3 Schottky Barrier Diode With High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm2
Z Hu, H Zhou, Q Feng, J Zhang, C Zhang, K Dang, Y Cai, Z Feng, Y Gao, ...
IEEE Electron Device Letters 39 (10), 1564-1567, 2018
Improved subthreshold swing and short channel effect in FDSOI n-channel negative capacitance field effect transistors
D Kwon, K Chatterjee, AJ Tan, AK Yadav, H Zhou, AB Sachid, R Dos Reis, ...
IEEE Electron Device Letters 39 (2), 300-303, 2017
Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with passivation
ZH Liu, GI Ng, H Zhou, S Arulkumaran, YKT Maung
Applied Physics Letters 98 (11), 113506, 2011
Al2O3/ -Ga2O3(-201) Interface Improvement Through Piranha Pretreatment and Postdeposition Annealing
H Zhou, S Alghmadi, M Si, G Qiu, DY Peide
IEEE Electron Device Letters 37 (11), 1411-1414, 2016
Temperature-dependent forward gate current transport in atomic-layer-deposited metal-insulator-semiconductor high electron mobility transistor
ZH Liu, GI Ng, S Arulkumaran, YKT Maung, H Zhou
Applied Physics Letters 98 (16), 163501, 2011
Lateral β-Ga2O3 MOSFETs With High Power Figure of Merit of 277 MW/cm2
Y Lv, H Liu, X Zhou, Y Wang, X Song, Y Cai, Q Yan, C Wang, S Liang, ...
IEEE Electron Device Letters 41 (4), 537-540, 2020
Observation of Optical and Electrical In-Plane Anisotropy in High-Mobility Few-Layer ZrTe5
G Qiu, Y Du, A Charnas, H Zhou, S Jin, Z Luo, DY Zemlyanov, X Xu, ...
Nano Letters 16 (12), 7364-7369, 2016
Thermodynamic Studies of β-Ga2O3 Nanomembrane Field-Effect Transistors on a Sapphire Substrate
H Zhou, K Maize, J Noh, A Shakouri, PD Ye
ACS omega 2 (11), 7723-7729, 2017
Ultra-wide bandgap semiconductor Ga2O3 power diodes
J Zhang, P Dong, K Dang, Y Zhang, Q Yan, H Xiang, J Su, Z Liu, M Si, ...
Nature communications 13 (1), 3900, 2022
High-Performance Vertical -Ga2O3 Schottky Barrier Diode With Implanted Edge Termination
H Zhou, Q Yan, J Zhang, Y Lv, Z Liu, Y Zhang, K Dang, P Dong, Z Feng, ...
IEEE Electron Device Letters 40 (11), 1788-1791, 2019
A review of the most recent progresses of state-of-art gallium oxide power devices
H Zhou, J Zhang, C Zhang, Q Feng, S Zhao, P Ma, Y Hao
Journal of Semiconductors 40 (1), 011803, 2019
Progress in state-of-the-art technologies of Ga2O3 devices
C Wang, J Zhang, S Xu, C Zhang, Q Feng, Y Zhang, J Ning, S Zhao, ...
Journal of Physics D: Applied Physics 54 (24), 243001, 2021
Demonstration of β-Ga2O3 Junction Barrier Schottky Diodes With a Baliga's Figure of Merit of 0.85 GW/cm2 or a 5A/700 V Handling Capabilities
Y Lv, Y Wang, X Fu, S Dun, Z Sun, H Liu, X Zhou, X Song, K Dang, ...
IEEE Transactions on Power Electronics 36 (6), 6179-6182, 2020
Performance enhancement of black phosphorus field-effect transistors by chemical doping
Y Du, L Yang, H Zhou, DY Peide
IEEE Electron Device Letters 37 (4), 429-432, 2016
Demonstration of the p-NiOx/n-Ga2O3 Heterojunction Gate FETs and Diodes With BV2/Ron,sp Figures of Merit of 0.39 GW/cm2 and 1.38 GW/cm2
C Wang, H Gong, W Lei, Y Cai, Z Hu, S Xu, Z Liu, Q Feng, H Zhou, J Ye, ...
IEEE Electron Device Letters 42 (4), 485-488, 2021
Lateral -Ga2O3 Schottky Barrier Diode on Sapphire Substrate With Reverse Blocking Voltage of 1.7 kV
Z Hu, H Zhou, K Dang, Y Cai, Z Feng, Y Gao, Q Feng, J Zhang, Y Hao
IEEE Journal of the Electron Devices Society 6, 815-820, 2018
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