| Narrow band gap high conducting nc-Si1-xGex: H absorber layers for tandem structure nc-Si solar cells A Dey, D Das Journal of Alloys and Compounds 806, 1529-1535, 2019 | 14 | 2019 |
| Optoelectronic and structural properties of Ge-rich narrow band gap nc-SixGe1-x absorber layer for tandem structure nc-Si solar cells A Dey, D Das Journal of Physics and Chemistry of Solids 154, 110055, 2021 | 8 | 2021 |
| Optimization in the nanostructural evolution of hydrogenated silicon germanium thin film in RF-PECVD D Das, A Dey Physica E: Low-dimensional Systems and Nanostructures 111, 20-28, 2019 | 8 | 2019 |
| Optimal H2-dilution playing key role in accomplishing significant nanocrystallinity with both Si and Ge moieties in SiGe nanocomposite thin film network A Dey, D Das Applied Surface Science 597, 153657, 2022 | 4 | 2022 |
| Growth of Ge on silicon-on-insulator wafer by plasma enhanced chemical vapor deposition and fabrication of microline photodetector using the Ge layer VK Aggarwal, S Sengupta, A Dey, A Ghatak, B Ghosh, S Bysakh, ... Materials Science and Engineering: B 302, 117242, 2024 | | 2024 |
| Correlation of microstructure factor with the electronic properties of nanocrystalline silicon–germanium thin films A Dey, D Das Materials Today: Proceedings 62, 5095-5098, 2022 | | 2022 |
| Effect of Si incorporation to produce Ge-rich nc-SixGe1-x absorber layer for nc-Si solar cells A Dey, D Das AIP Conference Proceedings 2220 (1), 090010, 2020 | | 2020 |
| Optimization of growth of nanocrystalline silicon germanium thin films synthesized by RF-PECVD A Dey, D Das AIP Conference Proceedings 1942 (1), 080069, 2018 | | 2018 |
Debajyoti DasSenior Professor & HoD, Energy Research Unit, Indian Association for the Cultivation of ScienceVerified email at iacs.res.in
