Graham E. Rowlands
Graham E. Rowlands
Research Scientist, BBN Technologies
Verified email at raytheon.com - Homepage
Title
Cited by
Cited by
Year
Voltage-induced ferromagnetic resonance in magnetic tunnel junctions
J Zhu, JA Katine, GE Rowlands, YJ Chen, Z Duan, JG Alzate, ...
Physical review letters 108 (19), 197203, 2012
2442012
Switching current reduction using perpendicular anisotropy in CoFeB–MgO magnetic tunnel junctions
P Khalili Amiri, ZM Zeng, J Langer, H Zhao, G Rowlands, YJ Chen, ...
Applied Physics Letters 98 (11), 112507, 2011
1952011
Low writing energy and sub nanosecond spin torque transfer switching of in-plane magnetic tunnel junction for spin torque transfer random access memory
H Zhao, A Lyle, Y Zhang, PK Amiri, G Rowlands, Z Zeng, J Katine, H Jiang, ...
Journal of Applied Physics 109 (7), 07C720, 2011
1412011
Deep subnanosecond spin torque switching in magnetic tunnel junctions with combined in-plane and perpendicular polarizers
GE Rowlands, T Rahman, JA Katine, J Langer, A Lyle, H Zhao, JG Alzate, ...
Applied Physics Letters 98 (10), 102509, 2011
1022011
Nanosecond-timescale low energy switching of in-plane magnetic tunnel junctions through dynamic Oersted-field-assisted spin Hall effect
SV Aradhya, GE Rowlands, J Oh, DC Ralph, RA Buhrman
Nano letters 16 (10), 5987-5992, 2016
862016
Sub-200 ps spin transfer torque switching in in-plane magnetic tunnel junctions with interface perpendicular anisotropy
H Zhao, B Glass, PK Amiri, A Lyle, Y Zhang, YJ Chen, G Rowlands, ...
Journal of Physics D: Applied Physics 45 (2), 025001, 2011
672011
Low write-energy magnetic tunnel junctions for high-speed spin-transfer-torque MRAM
PK Amiri, ZM Zeng, P Upadhyaya, G Rowlands, H Zhao, IN Krivorotov, ...
IEEE Electron Device Letters 32 (1), 57-59, 2010
652010
Strategies and tolerances of spin transfer torque switching
DE Nikonov, GI Bourianoff, G Rowlands, IN Krivorotov
Journal of Applied Physics 107 (11), 113910, 2010
652010
Effect of resistance-area product on spin-transfer switching in MgO-based magnetic tunnel junction memory cells
ZM Zeng, P Khalili Amiri, G Rowlands, H Zhao, IN Krivorotov, JP Wang, ...
Applied Physics Letters 98 (7), 072512, 2011
622011
Magnetization dynamics in a dual free-layer spin-torque nano-oscillator
GE Rowlands, IN Krivorotov
Physical Review B 86 (9), 094425, 2012
572012
Macrospin modeling of sub-ns pulse switching of perpendicularly magnetized free layer via spin-orbit torques for cryogenic memory applications
J Park, GE Rowlands, OJ Lee, DC Ralph, RA Buhrman
Applied Physics Letters 105 (10), 102404, 2014
482014
Nonlinear ferromagnetic resonance induced by spin torque in nanoscale magnetic tunnel junctions
X Cheng, JA Katine, GE Rowlands, IN Krivorotov
Applied Physics Letters 103 (8), 082402, 2013
462013
Reduction of switching current density in perpendicular magnetic tunnel junctions by tuning the anisotropy of the CoFeB free layer
MT Rahman, A Lyle, P Khalili Amiri, J Harms, B Glass, H Zhao, ...
Journal of Applied Physics 111 (7), 07C907, 2012
372012
Compact model for spin–orbit magnetic tunnel junctions
M Kazemi, GE Rowlands, E Ipek, RA Buhrman, EG Friedman
IEEE Transactions on Electron Devices 63 (2), 848-855, 2016
322016
Nanosecond magnetization dynamics during spin Hall switching of in-plane magnetic tunnel junctions
GE Rowlands, SV Aradhya, S Shi, EH Yandel, J Oh, DC Ralph, ...
Applied Physics Letters 110 (12), 122402, 2017
272017
GPU-accelerated micromagnetic simulations using cloud computing
CL Jermain, GE Rowlands, RA Buhrman, DC Ralph
Journal of Magnetism and Magnetic Materials 401, 320-322, 2016
172016
Efficient switching of 3-terminal magnetic tunnel junctions by the giant spin Hall effect of Pt85Hf15 alloy
MH Nguyen, S Shi, GE Rowlands, SV Aradhya, CL Jermain, DC Ralph, ...
Applied Physics Letters 112 (6), 062404, 2018
162018
All-spin-orbit switching of perpendicular magnetization
M Kazemi, GE Rowlands, S Shi, RA Buhrman, EG Friedman
IEEE Transactions on Electron Devices 63 (11), 4499-4505, 2016
162016
Time domain mapping of spin torque oscillator effective energy
GE Rowlands, JA Katine, J Langer, J Zhu, IN Krivorotov
Physical review letters 111 (8), 087206, 2013
142013
A critical analysis of the feasibility of pure strain-actuated giant magnetostrictive nanoscale memories
PG Gowtham, GE Rowlands, RA Buhrman
Journal of Applied Physics 118 (18), 183903, 2015
122015
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Articles 1–20