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Shuhei Ichikawa
Shuhei Ichikawa
Verified email at osaka-u.ac.jp - Homepage
Title
Cited by
Cited by
Year
Emission mechanisms in Al-rich AlGaN/AlN quantum wells assessed by excitation power dependent photoluminescence spectroscopy
Y Iwata, RG Banal, S Ichikawa, M Funato, Y Kawakami
Journal of Applied Physics 117 (7), 2015
932015
Carrier recombination in n-type 4H-SiC epilayers with long carrier lifetimes
S Ichikawa, K Kawahara, J Suda, T Kimoto
Applied physics express 5 (10), 101301, 2012
632012
Eu-doped GaN and InGaN monolithically stacked full-color LEDs with a wide color gamut
S Ichikawa, K Shiomi, T Morikawa, D Timmerman, Y Sasaki, ...
Applied Physics Express 14 (3), 031008, 2021
562021
High quality semipolar (11¯ 02) AlGaN/AlN quantum wells with remarkably enhanced optical transition probabilities
S Ichikawa, Y Iwata, M Funato, S Nagata, Y Kawakami
Applied Physics Letters 104 (25), 2014
462014
Dominant Nonradiative Recombination Paths and Their Activation Processes in -related Materials
S Ichikawa, M Funato, Y Kawakami
Physical Review Applied 10 (6), 064027, 2018
372018
Self‐Limiting Growth of Ultrathin GaN/AlN Quantum Wells for Highly Efficient Deep Ultraviolet Emitters
H Kobayashi, S Ichikawa, M Funato, Y Kawakami
Advanced Optical Materials 7 (21), 1900860, 2019
342019
AlxGa1− xN-based semipolar deep ultraviolet light-emitting diodes
R Akaike, S Ichikawa, M Funato, Y Kawakami
Applied Physics Express 11 (6), 061001, 2018
242018
Broad range thickness identification of hexagonal boron nitride by colors
Y Anzai, M Yamamoto, S Genchi, K Watanabe, T Taniguchi, S Ichikawa, ...
Applied physics express 12 (5), 055007, 2019
232019
Size dependence of quantum efficiency of red emission from GaN: Eu structures for application in micro-LEDs
DD Van Der Gon, D Timmerman, Y Matsude, S Ichikawa, M Ashida, ...
Optics Letters 45 (14), 3973-3976, 2020
222020
GaN: Eu, O-based resonant-cavity light emitting diodes with conductive AlInN/GaN distributed Bragg reflectors
T Inaba, J Tatebayashi, K Shiomi, D Timmerman, S Ichikawa, Y Fujiwara
ACS Applied Electronic Materials 2 (3), 732-738, 2020
212020
Excitation Efficiency and Limitations of the Luminescence of Ions in
D Timmerman, B Mitchell, S Ichikawa, J Tatebayashi, M Ashida, ...
Physical Review Applied 13 (1), 014044, 2020
212020
AlxGa1−xN‐Based Quantum Wells Fabricated on Macrosteps Effectively Suppressing Nonradiative Recombination
M Hayakawa, S Ichikawa, M Funato, Y Kawakami
Advanced Optical Materials 7 (2), 1801106, 2019
212019
Color-tunablility in GaN LEDs based on atomic emission manipulation under current injection
B Mitchell, R Wei, J Takatsu, D Timmerman, T Gregorkiewicz, W Zhu, ...
ACS Photonics 6 (5), 1153-1161, 2019
192019
Enhanced radiative recombination probability in AlGaN quantum wires on (0001) vicinal surface
M Hayakawa, Y Hayashi, S Ichikawa, M Funato, Y Kawakami
UV and Higher Energy Photonics: From Materials to Applications 9926, 52-58, 2016
162016
Carrier dynamics and excitation of ions in GaN
D Timmerman, B Mitchell, S Ichikawa, M Nagai, M Ashida, Y Fujiwara
Physical Review B 101 (24), 245306, 2020
142020
Room-temperature operation of near-infrared light-emitting diode based on Tm-doped GaN with ultra-stable emission wavelength
S Ichikawa, N Yoshioka, J Tatebayashi, Y Fujiwara
Journal of Applied Physics 127 (11), 2020
142020
Enhanced Red Emission of Eu,O-Codoped Embedded in a Photonic Crystal Nanocavity with Hexagonal Air Holes
S Ichikawa, Y Sasaki, T Iwaya, M Murakami, M Ashida, D Timmerman, ...
Physical Review Applied 15 (3), 034086, 2021
122021
Purcell-Effect-Enhanced Radiative Rate of Eu3+ Ions in Microdisks
D Timmerman, Y Matsude, Y Sasaki, S Ichikawa, J Tatebayashi, ...
Physical Review Applied 14 (6), 064059, 2020
122020
Metalorganic vapor phase epitaxy of pit-free AlN homoepitaxial films on various semipolar substrates
S Ichikawa, M Funato, Y Kawakami
Journal of Crystal Growth 522, 68-77, 2019
122019
Defect Electronics in SiC and Fabrication of Ultrahigh-Voltage Bipolar Devices
T Kimoto, J Suda, G Feng, H Miyake, K Kawahara, HY Niwa, T Okuda, ...
ECS Transactions 50 (3), 25, 2013
92013
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