| Impact of annealing environment on electrical properties of yttrium-doped hafnium zirconium dioxide thin films prepared by the solution process T Murakami, K Haga, E Tokumitsu Japanese Journal of Applied Physics 59 (SP), SPPB03, 2020 | 20 | 2020 |
| Improvement of Amorphous InGaZnO Thin-Film Transistor With Ferroelectric ZrOx/HfZrO Gate Insulator by 2 Step Sequential Ar/O2 Treatment MM Hasan, MM Islam, RN Bukke, E Tokumitsu, HY Chu, SC Kim, J Jang IEEE Electron Device Letters 43 (5), 725-728, 2022 | 14 | 2022 |
| Electrical properties of yttrium-doped hafnium-zirconium dioxide thin films prepared by solution process for ferroelectric gate insulator TFT application K Haga, E Tokumitsu Japanese Journal of Applied Physics 59 (SM), SMMB02, 2020 | 14 | 2020 |
| Indium oxide and indium-tin-oxide channel ferroelectric gate thin film transistors with yttrium doped hafnium-zirconium dioxide gate insulator prepared by chemical solution process T Miyasako, E Tokumitsu Japanese Journal of Applied Physics 60 (SB), SBBM02, 2021 | 13 | 2021 |
| Impact of reduced pressure crystallization on ferroelectric properties in hafnium-zirconium dioxide films deposited by sputtering Y Hara, T Murakami, S Migita, H Ota, Y Morita, E Tokumitsu Japanese Journal of Applied Physics 60 (SF), SFFB05, 2021 | 9 | 2021 |
| High performance ferroelectric ZnO thin film transistor using AlOx/HfZrO/ZrOx gate insulator by spray pyrolysis MM Hasan, M Mohit, J Bae, E Tokumitsu, HY Chu, SC Kim, J Jang Applied Physics Letters 119 (9), 2021 | 8 | 2021 |
| High performance, amorphous InGaZnO thin-film transistors with ferroelectric ZrO2 gate insulator by one step annealing MM Hasan, S Roy, E Tokumitsu, HY Chu, SC Kim, J Jang Applied Surface Science 611, 155533, 2023 | 6 | 2023 |
| Thermal stability of ferroelectricity in hafnium–zirconium dioxide films deposited by sputtering and chemical solution deposition for oxide-channel ferroelectric-gate … S Migita, H Ota, Y Morita, E Tokumitsu Applied Physics Express 14 (4), 041006, 2021 | 6 | 2021 |
| Fabrication of Ferroelectric Gate Thin‐Film Transistors with a Lanthanum‐Doped HZO Gate Insulator and Indium‐Tin‐Oxide Channel via a Solution Process Mohit, T Murakami, E Tokumitsu physica status solidi (RRL)–Rapid Research Letters 16 (10), 2100581, 2022 | 4 | 2022 |
| Enhancement of ferroelectricity in sputtered HZO thin films by catalytically generated atomic hydrogen treatment Y Wen, Y Hara, S Migita, H Ota, Y Morita, K Ohdaira, E Tokumitsu Japanese journal of applied physics 61 (SH), SH1004, 2022 | 3 | 2022 |
| Impact of CeOx layer insertion on ferroelectric properties of Hf-Zr-O films prepared by chemical solution deposition M Saito, K Higashimine, E Tokumitsu Japanese Journal of Applied Physics 63 (1), 01SP23, 2023 | 1 | 2023 |
| Fabrication of ferroelectric gate thin film transistors using CSD Y-HZO and sputtered HZO with sputtered ITO channel M Mohit, S Migita, H Ota, Y Morita, E Tokumitsu JSAP Annual Meetings Extended Abstracts The 68th JSAP Spring Meeting 2021 …, 2021 | | 2021 |
| Robustness of Ferroelectricity in Hafnium-Zirconium Dioxide Films Deposited By Sputtering and Chemical Solution Deposition for Ferroelectric Transistor Applications M Mohit, S Migita, H Ota, Y Morita, E Tokumitsu Electrochemical Society Meeting Abstracts prime2020, 1371-1371, 2020 | | 2020 |
| Ferroelectric Properties of Hafnium-Zirconium-Dioxide Prepared by Chemical Solution Process for MFM and MFS Structures M Mohit, E Tokumitsu JSAP Annual Meetings Extended Abstracts The 81st JSAP Autumn Meeting 2020 …, 2020 | | 2020 |
| Fabrication of ferroelectric hafnium-zirconium dioxide thin films by solution process M Mohit, J Patidar, KI Haga, E Tokumitsu JSAP Annual Meetings Extended Abstracts The 67th JSAP Spring Meeting 2020 …, 2020 | | 2020 |
Mehedi Hasan, PhDPragmatIC Semiconductor, Durham, UKVerified email at pragmaticsemi.com
