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Prachi Pohekar
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Improved RF-DC characteristics and reduced gate leakage in GaN MOS-HEMTs using thermally grown Nb2O5 gate dielectric
N Bhardwaj, BB Upadhyay, B Parvez, P Pohekar, Y Yadav, A Sahu, ...
Physica Scripta 98 (1), 015805, 2022
32022
Heat diffusion governing universal trend in saturation current and power in AlGaN/GaN high electron mobility transistors in pulsed operation
B Parvez, P Pohekar, S Ganguly, D Saha
Solid-State Electronics 197, 108425, 2022
12022
Performance improvement in NiO x-based GaN MOS-HEMTs
M Meer, P Pohekar, B Parvez, S Ganguly, D Saha
Semiconductor Science and Technology 37 (8), 085007, 2022
12022
Evidence of distributed energy border traps at Al2O3/p-diamond interface
P Pohekar, B Parvez, S Ganguly, D Saha
Diamond and Related Materials 128, 109239, 2022
2022
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