| Effective Schottky Barrier Height Lowering of Metal/n-Ge with a TiO2/GeO2 Interlayer Stack GS Kim, SW Kim, SH Kim, J Park, Y Seo, BJ Cho, C Shin, JH Shim, HY Yu ACS applied materials & interfaces 8 (51), 35419-35425, 2016 | 41 | 2016 |
| The Effect of Interfacial Dipoles on the Metal-Double Interlayers-Semiconductor Structure and Their Application in Contact Resistivity Reduction SW Kim, SH Kim, GS Kim, C Choi, R Choi, HY Yu ACS applied materials & interfaces 8 (51), 35614-35620, 2016 | 27 | 2016 |
| Non-Alloyed Ohmic Contacts on GaAs Using Metal-Interlayer-Semiconductor Structure With SF 6 Plasma Treatment SH Kim, GS Kim, SW Kim, JK Kim, C Choi, JH Park, R Choi, HY Yu IEEE Electron Device Letters 37 (4), 373-376, 2016 | 14 | 2016 |
| Ar Plasma Treatment for III–V Semiconductor-Based Transistor Source/Drain Contact Resistance Reduction SH Kim, SW Kim, GS Kim, J Kim, JH Park, HY Yu Journal of Nanoscience and Nanotechnology 16 (10), 10389-10392, 2016 | 4 | 2016 |
| Effect of Metal Nitride on Contact Resistivity of Metal-Interlayer-Ge Source/Drain in Sub-10-nm n-Type Ge FinFET J Ahn, JK Kim, SW Kim, GS Kim, C Shin, JK Kim, BJ Cho, HY Yu IEEE Electron Device Letters 37 (6), 705-708, 2016 | 3 | 2016 |
| Source/Drain Contact Resistance Reduction through Al-Doped ZnO Interlayer to Metal-Interlayer-GaAs Contact Structure SH Kim, GS Kim, SW Kim, HY Yu ECS Transactions 72 (4), 321-323, 2016 | 1 | 2016 |
| Formation of Low-Resistivity Metal/Germanium Contact with Ultra-Thin Interlayer and Plasma Oxidation for n-Channel Germanium FET GS Kim, SH Kim, J Park, SW Kim, HY Yu Meeting Abstracts, 1177-1177, 2016 | 1 | 2016 |
| 2-Dimensional Analysis of Plasma Ashing Damage Induced by Oxygen-Based Plasmas Along Nanopores in SiOCH Film for a Nanoscale Back-End of Line Process GS Kim, SW Kim, HJ Zang, M Ha, SS Park, CH Kim, HY Yu Journal of Nanoscience and Nanotechnology 16 (11), 11766-11770, 2016 | | 2016 |
Kim, Gwang-SikSamsung ElectronicsVerified email at korea.ac.kr
