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Hyong Min Kim
Hyong Min Kim
PhD Candidate, Electrical Engineering and Computer Sciences, University of California, Berkeley
Verified email at berkeley.edu
Title
Cited by
Cited by
Year
Scalable CMOS back-end-of-line-compatible AlScN/two-dimensional channel ferroelectric field-effect transistors
KH Kim, S Oh, MMA Fiagbenu, J Zheng, P Musavigharavi, P Kumar, ...
Nature nanotechnology 18 (9), 1044-1050, 2023
452023
Large area few-layer TMD film growths and their applications
SV Mandyam, HM Kim, M Drndić
Journal of Physics: Materials 3 (2), 024008, 2020
342020
High-density, localized quantum emitters in strained 2D semiconductors
G Kim, HM Kim, P Kumar, M Rahaman, CE Stevens, J Jeon, K Jo, KH Kim, ...
ACS nano 16 (6), 9651-9659, 2022
282022
Scalable CMOS-BEOL compatible AlScN/2D Channel FE-FETs
KH Kim, S Oh, MMA Fiagbenu, J Zheng, P Musavigharavi, P Kumar, ...
arXiv preprint arXiv:2201.02153, 2022
12022
The not-so-rare earth elements
HM Kim, D Jariwala
12021
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Articles 1–5