| Characteristics and mechanism of conduction/set process in TiN∕ ZnO∕ Pt resistance switching random-access memories N Xu, L Liu, X Sun, X Liu, D Han, Y Wang, R Han, J Kang, B Yu Applied Physics Letters 92, 232112, 2008 | 424 | 2008 |
| Bipolar switching behavior in TiN/ZnO/Pt resistive nonvolatile memory with fast switching and long retention N Xu, LF Liu, X Sun, C Chen, Y Wang, DD Han, XY Liu, RQ Han, JF Kang, ... Semiconductor Science and Technology 23, 075019, 2008 | 147 | 2008 |
| Resistive Switching in Films for Nonvolatile Memory Application X Sun, B Sun, L Liu, N Xu, X Liu, R Han, J Kang, G Xiong, TP Ma Electron Device Letters, IEEE 30 (4), 334-336, 2009 | 126 | 2009 |
| Hybrid 8-bit floating point (HFP8) training and inference for deep neural networks X Sun, J Choi, CY Chen, N Wang, S Venkataramani, VV Srinivasan, X Cui, ... Advances in neural information processing systems 32, 2019 | 124 | 2019 |
| Ultra-low precision 4-bit training of deep neural networks X Sun, N Wang, CY Chen, J Ni, A Agrawal, X Cui, S Venkataramani, ... Advances in Neural Information Processing Systems 33, 1796-1807, 2020 | 89 | 2020 |
| Study of gate oxide traps in HfO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method X Sun, OI Saadat, KS Chang-Liao, T Palacios, S Cui, TP Ma Applied Physics Letters 102 (10), 103504, 2013 | 82 | 2013 |
| Advancing CMOS beyond the Si roadmap with Ge and III/V devices M Heyns, G Brammertz, M Caymax, G Groeseneken, TY Hoffmann, D Lin, ... Proceedings of the International Symposium on Technology Evolution for …, 2010 | 79 | 2010 |
| Nucleation limited switching (NLS) model for HfO2-based metal-ferroelectric-metal (MFM) capacitors: Switching kinetics and retention characteristics N Gong, X Sun, H Jiang, KS Chang-Liao, Q Xia, TP Ma Applied Physics Letters 112 (26), 262903, 2018 | 71 | 2018 |
| Circuitry for ferroelectric FET-based dynamic random access memory and non-volatile memory X Sun, TP Ma US Patent 10,127,964, 2018 | 62 | 2018 |
| Total-Ionizing-Dose Radiation Effects in AlGaN/GaN HEMTs and MOS-HEMTs X Sun, OI Saadat, J Chen, EX Zhang, S Cui, T Palacios, DM Fleetwood, ... Nuclear Science, IEEE Transactions on 60 (6), 4074-4079, 2013 | 60 | 2013 |
| GaSb molecular beam epitaxial growth on p-InP (001) and passivation with in situ deposited Al2O3 gate oxide C Merckling, X Sun, A Alian, G Brammertz, VV Afanas’ev, TY Hoffmann, ... Journal of Applied Physics 109, 073719, 2011 | 50 | 2011 |
| DLFloat: A 16-b floating point format designed for deep learning training and inference A Agrawal, SM Mueller, BM Fleischer, X Sun, N Wang, J Choi, ... 2019 IEEE 26th Symposium on Computer Arithmetic (ARITH), 92-95, 2019 | 48 | 2019 |
| 9.1 A 7nm 4-core AI chip with 25.6 TFLOPS hybrid FP8 training, 102.4 TOPS INT4 inference and workload-aware throttling A Agrawal, SK Lee, J Silberman, M Ziegler, M Kang, S Venkataramani, ... 2021 IEEE International Solid-State Circuits Conference (ISSCC) 64, 144-146, 2021 | 44 | 2021 |
| Molecular beam deposition of Al2O3 on p-Ge (001)/Ge0. 95Sn0. 05 heterostructure and impact of a Ge-cap interfacial layer C Merckling, X Sun, Y Shimura, A Franquet, B Vincent, S Takeuchi, ... Applied Physics Letters 98, 192110, 2011 | 41 | 2011 |
| Charge collection mechanisms in AlGaN/GaN MOS high electron mobility transistors IK Samsel, EX Zhang, NC Hooten, ED Funkhouser, WG Bennett, RA Reed, ... IEEE Transactions on Nuclear Science 60 (6), 4439-4445, 2013 | 35 | 2013 |
| Gd Doping Improved Resistive Switching Characteristics of TiO2-Based Resistive Memory Devices LF Liu, JF Kang, N Xu, X Sun, C Chen, B Sun, Y Wang, XY Liu, X Zhang, ... Japanese Journal of Applied Physics 47, 2701, 2008 | 35 | 2008 |
| Capacitor-based cross-point array for analog neural network with record symmetry and linearity Y Li, S Kim, X Sun, P Solomon, T Gokmen, H Tsai, S Koswatta, Z Ren, ... 2018 IEEE Symposium on VLSI Technology, 25-26, 2018 | 34 | 2018 |
| Total ionizing dose (TID) effects in extremely scaled ultra-thin channel nanowire (NW) gate-all-around (GAA) InGaAs MOSFETs S Ren, M Si, K Ni, X Wan, J Chen, S Chang, X Sun, EX Zhang, RA Reed, ... IEEE Transactions on Nuclear Science 62 (6), 2888-2893, 2015 | 34 | 2015 |
| Scalecom: Scalable sparsified gradient compression for communication-efficient distributed training CY Chen, J Ni, S Lu, X Cui, PY Chen, X Sun, N Wang, S Venkataramani, ... Advances in Neural Information Processing Systems 33, 13551-13563, 2020 | 32 | 2020 |
| AC Transconductance Dispersion (ACGD): A Method to Profile Oxide Traps in MOSFETs Without Body Contact X Sun, S Cui, A Alian, G Brammertz, C Merckling, D Lin, TP Ma Electron Device Letters, IEEE 33 (3), 438-440, 2012 | 32 | 2012 |
Kailash GopalakrishnanIBMVerified email at us.ibm.com
