Kai Fu
Kai Fu
Verified email at asu.edu
Cited by
Cited by
Near‐Infrared Photodetectors Based on MoTe2/Graphene Heterostructure with High Responsivity and Flexibility
W Yu, S Li, Y Zhang, W Ma, T Sun, J Yuan, K Fu, Q Bao
Small 13 (24), 1700268, 2017
Gallium nitride Schottky betavoltaic nuclear batteries
M Lu, G Zhang, K Fu, G Yu, D Su, J Hu
Energy Conversion and Management 52 (4), 1955-1958, 2011
Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs
M Hua, C Liu, S Yang, S Liu, K Fu, Z Dong, Y Cai, B Zhang, KJ Chen
IEEE Transactions on Electron Devices 62 (10), 3215-3222, 2015
Integration of LPCVD-SiNxgate dielectric with recessed-gate E-mode GaN MIS-FETs: Toward high performance, high stability and long TDDB lifetime
M Hua, Z Zhang, J Wei, J Lei, G Tang, K Fu, Y Cai, B Zhang, KJ Chen
2016 IEEE International Electron Devices Meeting (IEDM), 10.4. 1-10.4. 4, 2016
GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNxas Gate Dielectric
M Hua, C Liu, S Yang, S Liu, K Fu, Z Dong, Y Cai, B Zhang, KJ Chen
IEEE Electron Device Letters 36 (5), 448-450, 2015
Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si3N4as Gate Dielectric and Passivation Layer
Z Zhang, G Yu, X Zhang, X Deng, S Li, Y Fan, S Sun, L Song, S Tan, D Wu, ...
IEEE Transactions on Electron Devices 63 (2), 731-738, 2016
Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment
R Hao, K Fu, G Yu, W Li, J Yuan, L Song, Z Zhang, S Sun, X Li, Y Cai, ...
Applied Physics Letters 109 (15), 152106, 2016
Flexible Broadband Graphene Photodetectors Enhanced by Plasmonic Cu3−xP Colloidal Nanocrystals
T Sun, Y Wang, W Yu, Y Wang, Z Dai, Z Liu, BN Shivananju, Y Zhang, ...
Small 13 (42), 1701881, 2017
Breakdown enhancement and current collapse suppression by high-resistivity GaN cap layer in normally-off AlGaN/GaN HEMTs
R Hao, W Li, K Fu, G Yu, L Song, J Yuan, J Li, X Deng, X Zhang, Q Zhou, ...
IEEE Electron Device Letters 38 (11), 1567-1570, 2017
AlGaN/GaN MIS-HEMTs of Very-Low Hysteresis and Current Collapse With In-Situ Pre-Deposition Plasma Nitridation and LPCVD-Si3N4 Gate Insulator
Z Zhang, W Li, K Fu, G Yu, X Zhang, Y Zhao, S Sun, L Song, X Deng, ...
IEEE Electron Device Letters 38 (2), 236-239, 2016
Analysis of photonic crystal and multi-frequency terahertz microstrip patch antenna
L Yang, X Shi, K Chen, K Fu, B Zhang
Physica B: Condensed Matter 431, 11-14, 2013
Solar-blind ultraviolet photodetector based on graphene/vertical Ga2O3 nanowire array heterojunction
T He, Y Zhao, X Zhang, W Lin, K Fu, C Sun, F Shi, X Ding, G Yu, K Zhang, ...
Nanophotonics 7 (9), 1557-1562, 2018
GaN-based PIN alpha particle detectors
G Wang, K Fu, C Yao, D Su, G Zhang, J Wang, M Lu
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2012
Normally Off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si3N4 Gate Dielectric and …
Z Zhang, K Fu, X Deng, X Zhang, Y Fan, S Sun, L Song, Z Xing, W Huang, ...
IEEE Electron Device Letters 36 (11), 1128-1131, 2015
Compatibility of AlN/SiNxPassivation With LPCVD-SiNxGate Dielectric in GaN-Based MIS-HEMT
M Hua, Y Lu, S Liu, C Liu, K Fu, Y Cai, B Zhang, KJ Chen
IEEE Electron Device Letters 37 (3), 265-268, 2016
Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition
K Fu, H Fu, H Liu, SR Alugubelli, TH Yang, X Huang, H Chen, ...
Applied Physics Letters 113 (23), 233502, 2018
High performance vertical GaN-on-GaN pn power diodes with hydrogen-plasma-based edge termination
H Fu, K Fu, X Huang, H Chen, I Baranowski, TH Yang, J Montes, Y Zhao
IEEE Electron Device Letters 39 (7), 1018-1021, 2018
Fabrication of normally-off AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors by photo-electrochemical gate recess etching in ionic liquid
Z Zhang, S Qin, K Fu, G Yu, W Li, X Zhang, S Sun, L Song, S Li, R Hao, ...
Applied Physics Express 9 (8), 084102, 2016
GaN‐based p–i–n X‐ray detection
C Yao, K Fu, G Wang, G Yu, M Lu
physica status solidi (a) 209 (1), 204-206, 2012
Gallium nitride room temperature α particle detectors
L Min, Z Guo-Guang, F Kai, Y Guo-Hao
Chinese Physics Letters 27 (5), 052901, 2010
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