| A SPICE compact model for ambipolar 2-D-material FETs aiming at circuit design SA Ahsan, SK Singh, MA Mir, M Perucchini, DK Polyushkin, T Mueller, ... IEEE Transactions on Electron Devices 68 (6), 3096-3103, 2021 | 14 | 2021 |
| Modeling and analysis of double channel GaN HEMTs using a physics-based analytical model RR Malik, MA Mir, Z Bhat, A Pampori, YS Chauhan, SA Ahsan IEEE Journal of the Electron Devices Society 9, 789-797, 2021 | 6 | 2021 |
| Dynamic Interplay of Surface and Buffer Traps in Determining Drain Current Injection induced Device Instability in OFF-state of AlGaN/GaN HEMTs MA Mir, V Joshi, RR Chaudhuri, MA Munshi, RR Malik, M Shrivastava 2023 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2023 | 3 | 2023 |
| Signatures of positive gate over-drive induced hole trap generation and its impact on p-GaN gate stack instability in AlGaN/GaN HEMTs RR Malik, V Joshi, RR Chaudhuri, MA Mir, Z Khan, AN Shaji, ... 2023 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2023 | 2 | 2023 |
| Unique lattice temperature dependent evolution of hot electron distribution in GaN HEMTs on C-doped GaN buffer and its reliability consequences RR Chaudhuri, V Joshi, A Gupta, T Joshi, RR Malik, MA Mir, SD Gupta, ... 2023 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2023 | 1 | 2023 |
| On The Role of Stress Engineering of Surface Passivation in Determining the Device Performance of AlGaN/GaN HEMTs MA Mir, A Thakare, MA Munshi, V Avinash, S Wani, Z Khan, R Chaudhuri, ... 2024 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2024 | | 2024 |
| Understanding Temperature Dependence of ESD Reliability in AlGaN/GaN HEMTs MA Munshi, MA Mir, R Malik, V Joshi, RR Chaudhuri, Z Khan, ... 2023 45th Annual EOS/ESD Symposium (EOS/ESD), 1-5, 2023 | | 2023 |
| A Novel High performance D-latch using Gate Engineered Schottky device MA Mir, SA Loan 5th International Conference on Multimedia, Signal Processing and …, 2023 | | 2023 |
