| Performance evaluation of future T-type PFC rectifier and inverter systems with monolithic bidirectional 600 V GaN switches F Vollmaier, N Nain, J Huber, JW Kolar, KK Leong, B Pandya 2021 IEEE Energy Conversion Congress and Exposition (ECCE), 5297-5304, 2021 | 23 | 2021 |
| Synergetic control of three-phase AC-AC current-source converter employing monolithic bidirectional 600 V GaN transistors N Nain, D Zhang, J Huber, JW Kolar, KK Leong, B Pandya 2021 IEEE 22nd Workshop on Control and Modelling of Power Electronics …, 2021 | 13 | 2021 |
| 600V GaN dual gate bidirectional switch B Pandya Power-America Institute, 2019 | 8 | 2019 |
| Robustness aspects of 600V GaN-on-Si based power cascoded HFET D Veereddy, J Amrbus, T Mcdonald, B Pandya, M Imam, R Garg, A Diy, ... Reliability Physics Symposium (IRPS)2017 IEEE International, pp. 3B-1.1-3B-1 …, 0 | 4* | |
| Semiconductor device having a bidirectional switch and discharge circuit GP B Pandya, M Imam, H Kim, KK Leong US Patent App. US20190326280A1, 2019 | 2* | 2019 |
| High voltage blocking III-V semiconductor device H Kim, JU Heinle, M Imam, B Pandya, R Tadikonda, M Vorwerk US Patent 11,251,294, 2022 | 1 | 2022 |
| Group iii nitride transistor device B Pandya, A Sanders, KK Leong, T Beer, C Ostermaier US Patent App. 18/503,770, 2024 | | 2024 |
| High voltage blocking III-V semiconductor device H Kim, JU Heinle, M Imam, B Pandya, R Tadikonda, M Vorwerk US Patent 11,923,448, 2024 | | 2024 |
| Type iii-v semiconductor device with multi-layer barrier region K Reiser, I Daumiller, L Knuuttila, B Pandya US Patent App. 17/458,827, 2023 | | 2023 |
| Semiconductor device with two-way switch and discharge circuit GP Bhargav Pandya, Mohamed Imam, Hyeongnam Kim, Kennith Kin Leong CN Patent App. CN110,391,224 A, 2019 | | 2019 |
| Semiconductor device having a bidirectional switch and discharge circuit GP Bhargav Pandya, Mohamed Imam, Hyeongnam Kim, Kennith Kin Leong EP Patent App. EP3562040A1, 2019 | | 2019 |
| RDSON Stability of GaN High Voltage Power Devices Post Long-Term Stress: A New Method to Screen Unstable RDSON Performers TM H. Kim, H. Kannan, Y. Pan, D. Veereddy, R. Garg, C. Zhu, J. Sun, B ... CS Mantech Scottsdale Arizona, 2015 | | 2015 |
| RDSON Stability of GaN High Voltage Power Devices Post Long-Term Stress: A New Method to Screen Unstable RDSON Performers H Kim, H Kannan, Y Pan, D Veereddy, R Garg, C Zhu, J Sun, B Pandya, ... | | |
Jonas E. HuberETH Zurich, Power Electronic Systems LaboratoryVerified email at lem.ee.ethz.ch
